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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
TMS4416-20NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED	22.48 mm	200 ns
TM4161EP5-20L	Texas Instruments	VIDEO DRAM MODULE	COMMERCIAL	35		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		5	MICROELECTRONIC ASSEMBLY	SIP35,.2	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX5	64K	0 Cel	SINGLE	2	R-XSMA-T35	5.5 V			Not Qualified	327680 bit	4.5 V	RAS ONLY REFRESH; 256 X 5 SAM PORT	NOT SPECIFIED	NOT SPECIFIED		200 ns
5962-01-326-2476	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4257-20FME	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			12.446 mm	200 ns
SMJ4416-12JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED	22.606 mm	120 ns
SMJ4164-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	DUAL	1	R-CDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		200 ns
TM4164EQ5-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	24		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	180 mA	65536 words	SEPARATE	5		5	MICROELECTRONIC ASSEMBLY	SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX5	64K	0 Cel	SINGLE	1	R-XSMA-T24	5.5 V			Not Qualified	327680 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4164FM9-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words	COMMON	5		9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	64KX9	64K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V			Not Qualified	589824 bit	4.5 V	RAS ONLY REFRESH				200 ns
5962-01-270-0685	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL		R-PDIP-T16				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4256-8NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL	1	R-PDIP-T16	5.25 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			19.305 mm	80 ns
TMS4164-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS4161-20FME	Texas Instruments	VIDEO DRAM	INDUSTRIAL	22	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	QUAD	2	R-PQCC-J22	5.5 V	3.53 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT			12.445 mm	200 ns
TMS4164-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4256EU9-12L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE		R-PSMA-N30		16.51 mm		Not Qualified	2359296 bit						120 ns
TMS4464-20JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		200 ns
TM4256HE4-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	24		256		PLASTIC/EPOXY		NO		MOS				78 mA	524288 words	SEPARATE	5	5	4		SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	512KX4	512K	0 Cel	SINGLE						Not Qualified	2097152 bit						100 ns
SMJ4464-20JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	22.606 mm	200 ns
TMS4257-20FML	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	12.446 mm	200 ns
TM4256EL9-10L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		100 ns
TM4164FL8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V			Not Qualified	524288 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		120 ns
TM4256EQ5-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	24		256		PLASTIC/EPOXY		NO		MOS					262144 words	SEPARATE	5	5	5		SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K	0 Cel	SINGLE						Not Qualified	1310720 bit						100 ns
TMS4256-8SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	ZIG-ZAG	1	R-PZIP-T16	5.25 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.5 mm	80 ns
TM4256EC4-10L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		100 ns
SMJ4256-15FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	QUAD	1	R-CQCC-N18	5.25 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	12.32 mm	150 ns
TMS4256-8FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	QUAD	1	R-PQCC-J18	5.25 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			12.446 mm	80 ns
TM4257FL8-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4256GV9-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	11.43 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4256-8NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.25 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			19.305 mm	80 ns
SMJ4416-15FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words	COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED	10.795 mm	150 ns
SMJ4416-20FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words	COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED	10.795 mm	200 ns
TM4256FL8-10L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		100 ns
TMS4256-12JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		120 ns
5962-01-241-6980	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel	DUAL		R-XDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4257-10JL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	262144 bit						100 ns
TM4257FL8-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		200 ns
5962-01-277-8021	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	DUAL		R-XDIP-T18				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		150 ns
SMJ4256-12FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	QUAD	1	R-CQCC-N18	5.25 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	12.32 mm	120 ns
TM4256GV9-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS					262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE				11.43 mm		Not Qualified	2359296 bit			NOT SPECIFIED	NOT SPECIFIED		100 ns
TM4256GP9-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	11.43 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				120 ns
TM4257FL8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		120 ns
TMS4256-12SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.5 mm	120 ns
SMJ4416-12JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH			22.606 mm	120 ns
TM4257EL9-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4257EQ5-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	24		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	5	MICROELECTRONIC ASSEMBLY	SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K	0 Cel	SINGLE	1	R-XSMA-T24	5.5 V			Not Qualified	1310720 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4256-10SDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.5 mm	100 ns
TM4164EC4-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		120 ns
TMS41128B-15L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		131072 words		5		1	IN-LINE				70 Cel	3-STATE	128KX1	128K	0 Cel	DUAL	1	R-PDIP-T16	5.5 V			Not Qualified	131072 bit	4.5 V	RAS ONLY REFRESH				150 ns
TM4257FC1-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.