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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TM4256EL9-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED			200 ns
SMJ4461-15JDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	24	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		4	IN-LINE				70 Cel	3-STATE	64KX4	64K	0 Cel	DUAL	2	R-CDIP-T24	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT					150 ns
TM4256GP8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	11.43 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					120 ns
TM4164EL9-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	COMMON	5		9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX9	64K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V			Not Qualified	589824 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			120 ns
TM4256GU8-10L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	16.51 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					100 ns
TM4256GV9-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	11.43 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED			200 ns
5962-01-321-0149	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel	DUAL		R-XDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED			200 ns
TM4164EC4-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			200 ns
TMS4257-15FME	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				12.446 mm	150 ns
SMJ4164-20FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns
TM4257GU9-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	16.51 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					200 ns
5962-01-266-1459	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	QUAD		R-XQCC-N18				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED			120 ns
TMS4256-20NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				19.305 mm	200 ns
TMS4461-12SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	24	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5	5	4	IN-LINE	ZIP24,.1	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	ZIG-ZAG	2	R-PZIP-T24	5.5 V	10.16 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT	NOT SPECIFIED	NOT SPECIFIED			120 ns
TMS4256-15NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				19.305 mm	150 ns
TM4257EC4-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED			200 ns
SMJ4164-12FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.32 mm	120 ns
TMS4416-15FPL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		16384 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.5 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		10.795 mm	150 ns
TMS4257-20JL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	262144 bit							200 ns
TM4256HE4-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	78 mA	524288 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	512KX4	512K	0 Cel	SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED			120 ns
SMJ4256-20FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	QUAD	1	R-CQCC-N18	5.25 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.32 mm	200 ns
TMS4257-12FML	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.446 mm	120 ns
TMS4256-10FME	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				12.446 mm	100 ns
5962-01-263-9396	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel	DUAL		R-XDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED			200 ns
TM4416KU8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		16384 words	COMMON	5		8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V			Not Qualified	131072 bit	4.5 V	RAS ONLY REFRESH					120 ns
SMJ4164-12JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	DUAL	1	R-CDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH					120 ns
TMS4256-10NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		19.305 mm	100 ns
SM4256-15JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	256KX1	256K	-55 Cel	DUAL		R-XDIP-T16				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED			150 ns
5962-01-266-2043	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	DUAL		R-PDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED			120 ns
TMS4464-20NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.48 mm	200 ns
SM4256-20JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	256KX1	256K	-55 Cel	DUAL		R-XDIP-T16				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED			200 ns
SM4256-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED			200 ns
5962-01-263-9895	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel	DUAL		R-XDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED			150 ns
TM4256FU8-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD			262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE		R-PSMA-N30		16.51 mm		Not Qualified	2097152 bit							100 ns
TMS4464-15FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.446 mm	150 ns
TM4256GV8-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS					262144 words	COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE				11.43 mm		Not Qualified	2097152 bit							100 ns
TMS4256-15FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.446 mm	150 ns
TMS4416-20FPL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		16384 words	COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.5 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns
TMS4416-12NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words	COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.48 mm	120 ns
TM4256GV8-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	11.43 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED			150 ns
TM4256GV9-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	11.43 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED			120 ns
TM4256GP8-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD			262144 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	SINGLE		R-PSMA-N30		11.43 mm		Not Qualified	2097152 bit							100 ns
5962-01-263-9395	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel	QUAD		R-XQCC-N18				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ4416-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				22.606 mm	200 ns
TM4256GP9-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	11.43 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					150 ns
TMS4161-20NL	Texas Instruments	VIDEO DRAM	COMMERCIAL	20	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	90 mA	65536 words		5		1	IN-LINE	DIP20,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	DUAL	2	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	.02 Amp	24.325 mm	200 ns
TM4416KU8-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		16384 words	COMMON	5		8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V			Not Qualified	131072 bit	4.5 V	RAS ONLY REFRESH					150 ns
5962-01-133-1276	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	DUAL		R-XDIP-T16				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED			200 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.