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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4Y50044UE-JCA20	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	ASYNCHRONOUS	740 mA	134217728 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	36 ns
MD18R3268AG0-CM8	Samsung	RAMBUS DRAM MODULE	COMMERCIAL	232	DIMM	32768	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS		NO LEAD	SYNCHRONOUS	2270 mA	134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX36	128M	0 Cel		DUAL	1	R-XDMA-N232		2.63 V		400 MHz		Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH		NOT SPECIFIED	NOT SPECIFIED	1.464 Amp			40 ns
K4Y50024UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1000 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1		260	.025 Amp			35 ns
K4Y50044UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		900 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			36 ns
K4Y50084UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS	1360 mA	67108864 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	28 ns
K4Y50024UE-JCA2	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		710 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
K4Y50044UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1270 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			28 ns
K4Y50024UC-JCC40	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS	1210 mA	268435456 words		YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	28 ns
K4Y50164UC-JCB3	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1300 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B104	3					Not Qualified	536870912 bit			e1		260	.025 Amp			35 ns
K4Y50024UC-JCA2	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		820 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			36 ns
K4Y50164UC-JCA20	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS	1050 mA	33554432 words		YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	36 ns
K4Y50044UC-JCB30	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS	1100 mA	134217728 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	35 ns
K4Y50024UE-JCC40	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	ASYNCHRONOUS	1070 mA	268435456 words		YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	28 ns
K4Y50084UC-JCB30	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS	1200 mA	67108864 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	35 ns
K4Y50044UE-JCC4	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1110 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			28 ns
K4Y50084UC-JCA20	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS	980 mA	67108864 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	36 ns
K4Y50084UE-JCB30	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	ASYNCHRONOUS	1020 mA	67108864 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	35 ns
K4Y50164UE-JCB3T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1150 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			35 ns
MD18R326GAG0-CN1	Samsung	RAMBUS DRAM MODULE	COMMERCIAL	232	DIMM	32768	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS		NO LEAD	SYNCHRONOUS	4270 mA	268435456 words		YES	COMMON	2.5	1.8/2.5,2.5	36	MICROELECTRONIC ASSEMBLY	DIMM232,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX36	256M	0 Cel		DUAL	1	R-XDMA-N232		2.63 V		600 MHz		Not Qualified	9663676416 bit	2.37 V	SELF CONTAINED REFRESH		NOT SPECIFIED	NOT SPECIFIED	1.976 Amp			32 ns
K4Y50044UE-JCC40	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	ASYNCHRONOUS	1110 mA	134217728 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	28 ns
K4Y50084UE-JCB3	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1020 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B100	3					Not Qualified	536870912 bit					260	.04 Amp			35 ns
K4Y50024UE-JCB30	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	ASYNCHRONOUS	910 mA	268435456 words		YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	35 ns
K4Y50024UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1210 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			28 ns
K4Y50084UE-JCC4T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1200 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			28 ns
K4Y50044UE-JCA2T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		740 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
K4Y50164UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		1500 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			28 ns
EDX5116ACSE-2A-E	Micron Technology	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B104						Not Qualified	536870912 bit									.065 ns
MT53E256M32D1KS-046AUT:L	Micron Technology	LPDDR4 DRAM		200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	48.7 mA	268435456 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	125 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.95 mm	2133 MHz	10 mm		8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0011 Amp	16,32	14.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.