4096 DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

HYS64V2200GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

134217728 bit

.016 Amp

6 ns

HYB39V644400TL-15

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

900 mA

16777216 words

1,2,4,8,16

YES

COMMON

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

66 MHz

10.16 mm

67108864 bit

3 V

AUTO/SELF REFRESH; LG-MAX

.0005 Amp

1,2,4,8,16

22.62 mm

12 ns

HYS64V16220GCDL-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1024 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N144

100 MHz

Not Qualified

1073741824 bit

.008 Amp

6 ns

HYB3165160ATL-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

105 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0001 Amp

20.95 mm

60 ns

HYB3165400J-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

34

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J34

3.6 V

3.76 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

e0

.0002 Amp

22.25 mm

60 ns

HYB5116800AJ-80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.75 mm

10.28 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE

e0

.001 Amp

18.54 mm

80 ns

HYB39S64160BTL-10

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

90 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

100 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

e0

.001 Amp

1,2,4,8

22.22 mm

7 ns

HYB5116100AJ-80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J24

5.5 V

3.75 mm

7.75 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE

e0

.001 Amp

17.27 mm

80 ns

HYS72V32220GR-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

130 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

2415919104 bit

3 V

.001 Amp

6 ns

HYB39S64400AT-10

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

90 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

100 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

22.22 mm

8 ns

HYB39S64800BTL-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

8388608 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

143 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

5.4 ns

HYB3165400AJ-40

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

155 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0009 Amp

21.08 mm

40 ns

HYB39S128160CT-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

230 mA

8388608 words

1,2,4,8

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

e0

.0015 Amp

1,2,4,8

22.22 mm

5.4 ns

HYB39S64400T-10

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

155 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

100 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

8 ns

HYB39S16160T-12

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G50

83 MHz

Not Qualified

16777216 bit

e0

.003 Amp

1,2,4,8

10 ns

HYB39S64160BT-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

140 mA

4194304 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

22.22 mm

5.4 ns

HYB3165165BT-60

Infineon Technologies

EDO DRAM

COMMERCIAL

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

90 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

20.95 mm

60 ns

HYB5116400BT-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

24

SOP

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

90 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G24

5.5 V

3.75 mm

7.75 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.001 Amp

17.27 mm

60 ns

HYB39S128160CT-8

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

210 mA

8388608 words

1,2,4,8

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

125 MHz

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

e0

.0015 Amp

1,2,4,8

22.22 mm

6 ns

HYB39S16160CT-6

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

100 mA

1048576 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

166 MHz

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

20.95 mm

5 ns

HYS72V2200GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

900 mA

2097152 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX72

2M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

150994944 bit

3 V

AUTO/SELF REFRESH

.018 Amp

8 ns

HYM64V8005GU-70

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

536870912 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.004 Amp

70 ns

HYS72V4000GU-12

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2500 mA

4194304 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

R-PDMA-N168

83 MHz

Not Qualified

301989888 bit

.04 Amp

10 ns

HYB39S16400T-12

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

MOS

GULL WING

SYNCHRONOUS

125 mA

4194304 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

83 MHz

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

18.41 mm

10 ns

HYS64V2200GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

134217728 bit

.016 Amp

8 ns

HYB5116405BJ-70

Infineon Technologies

EDO DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

HYS72V2100GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

900 mA

2097152 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

2MX72

2M

3 V

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

150994944 bit

3 V

AUTO/SELF REFRESH

.018 Amp

8 ns

HYB3165800AT-50

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

130 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

20.95 mm

50 ns

HYS64V8200GU-8B

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

130 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

536870912 bit

.001 Amp

6 ns

HYS72V8200GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

130 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

603979776 bit

3 V

.001 Amp

6 ns

HYM32V4040GD-60

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

210 mA

4194304 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

DUAL

R-PDMA-N72

25.4 mm

Not Qualified

134217728 bit

.0018 Amp

60 ns

HYS72V16200GU-8B

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

240 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

1207959552 bit

.002 Amp

6 ns

HYS72V2200GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

900 mA

2097152 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX72

2M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

150994944 bit

.018 Amp

6 ns

HYS72V8300GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

110 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

603979776 bit

3 V

.001 Amp

6 ns

HYB39S64800AT-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

8388608 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

143 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

5.4 ns

HYS72V16200GR-8B

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

130 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

1207959552 bit

.001 Amp

6 ns

HYB3165805BTL-50

Infineon Technologies

EDO DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

110 mA

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

e0

.0002 Amp

20.95 mm

50 ns

HYB39V64160TL-15

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

900 mA

4194304 words

1,2,4,8,16

YES

COMMON

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

66 MHz

10.16 mm

67108864 bit

3 V

AUTO/SELF REFRESH; LG-MAX

.0005 Amp

1,2,4,8,16

22.62 mm

12 ns

HYS64V1600GCD-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2080 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N144

100 MHz

Not Qualified

1073741824 bit

.016 Amp

6 ns

HYB3165160T-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

120 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.56,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

e0

.0002 Amp

22.25 mm

60 ns

HYB5116100ASJ-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J24

5.5 V

3.75 mm

10.28 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE

e0

.001 Amp

18.54 mm

60 ns

HYM72V1625GS-50

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2520 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

38.1 mm

Not Qualified

1207959552 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.03 Amp

50 ns

HYB3116405BTL-70

Infineon Technologies

EDO DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.0002 Amp

70 ns

HYB39S64400ET-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

140 mA

16777216 words

1,2,4,8

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS64V8200GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

90 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

536870912 bit

3 V

.001 Amp

8 ns

HYB3165800J-50

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

34

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

140 mA

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J34

3.6 V

3.76 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

e0

.0002 Amp

22.25 mm

50 ns

HYB39V64160TL-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

900 mA

4194304 words

1,2,4,8,16

YES

COMMON

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

67108864 bit

3 V

AUTO/SELF REFRESH; LG-MAX

.0005 Amp

1,2,4,8,16

22.62 mm

5.5 ns

HYB3165805BJ-50

Infineon Technologies

EDO DRAM

COMMERCIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

110 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

e0

.001 Amp

21.08 mm

50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.