4096 DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SM3604T-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		200 mA	4194304 words			COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL		R-PDSO-G54			133 MHz		Not Qualified	67108864 bit				.0015 Amp			4.6 ns
SM12808DT-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	1073741824 bit							4.6 ns
SM3603T-7.5I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	8388608 words			COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-G54			133 MHz		Not Qualified	67108864 bit				.0025 Amp			4.8 ns
SM12809DT-6.6	Infineon Technologies	SYNCHRONOUS DRAM MODULE				4096						CMOS				16777216 words			COMMON			72			DRAMs			3-STATE	16MX72	16M											1207959552 bit
SM6408DT-6.6	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168			150 MHz		Not Qualified	536870912 bit							4.5 ns
SM6408DT-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	536870912 bit							4.6 ns
SM12809DT-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	1207959552 bit							4.6 ns
HYB25D128323C-3.3	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128	2.9 V	1.5 mm	300 MHz	11 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e0	.06 Amp	2,4,8	11 mm	.5 ns
HYB25D128800T-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.025 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128800T-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	285 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.027 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128800ATL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128800CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3	.0045 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128800TL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	285 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.027 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128800AT-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128323CL4.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	S-PBGA-B128	2.63 V	1.5 mm	222 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0		2,4,8	11 mm	.7 ns
HYB25D128800TL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	275 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.023 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3	.0045 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128400AT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128800CEL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3	.0045 Amp	2,4,8	22.22 mm	.6 ns
HYB25D128800TL-7.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.025 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128160AT-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128400CT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.004 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128800T-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	275 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.023 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128800TL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.025 Amp	2,4,8	22.22 mm	.75 ns
HYB25L128160AC-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54	2.9 V	1.2 mm	125 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.000003 Amp	1,2,4,8	9 mm	6 ns
HYB25D128800CTL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.6 ns
HYB25D128323C-3	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	430 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128	2.9 V	1.5 mm	333 MHz	11 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e0	.065 Amp	2,4,8	11 mm	.5 ns
HYB25D128160AT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128800ATL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128400ATL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128400CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3	.0045 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128323C-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128	2.63 V	1.5 mm	200 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0	.05 Amp	2,4,8	11 mm	.7 ns
HYB25D128800T-7.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.025 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128160ATL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128323C-4.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128	2.63 V	1.5 mm	222 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0	.05 Amp	2,4,8	11 mm	.7 ns
HYB25D128400CE-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3	.004 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128800CT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128400AT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25L128160AC-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54	2.9 V	1.2 mm	133 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.000003 Amp	1,2,4,8	9 mm	5.4 ns
HYB25D128400ATL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128160ATL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128160CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	8388608 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e3	.005 Amp	2,4,8	22.22 mm	.5 ns
HYB25D128160AT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128160CT-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	8388608 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e0	.005 Amp	2,4,8	22.22 mm	.5 ns
HYB25D128800ATL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128160ATL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128323C-3.6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	370 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128	2.63 V	1.5 mm	278 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0	.055 Amp	2,4,8	11 mm	.55 ns
HYB25D128400AT-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0	.0045 Amp	2,4,8	22.22 mm	.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.