512 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM416C256LZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	145 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.07 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp		70 ns
KM41C1000BZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM44C266CZ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	60 ns
KM416V254DJ-7	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	e0	.0005 Amp	26.04 mm	70 ns
KMM536512W-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD		304 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K		SINGLE	1	R-XSMA-N72			25.4 mm		Not Qualified	18874368 bit				.004 Amp		60 ns
KM416C256BLLJ-5	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40		5.25 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.00015 Amp	25.535 mm	50 ns
KM41C1000CVR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP1-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/24,.63,20		DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	14.4 mm	70 ns
KM428C128Z-12	Samsung	VIDEO DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	100 mA	131072 words			5	5	8	IN-LINE	ZIP40,.1		Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T40		5.5 V	12.06 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.01 Amp		120 ns
KM4216C256GF-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel		3-STATE	256KX16	256K		DUAL	2	R-PDSO-G64		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT			26.03 mm	60 ns
KM428C256TR-7	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	165 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Other Memory ICs	.8 mm	70 Cel			256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	18.41 mm	70 ns
KM4216V258G-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32		Other Memory ICs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	2	R-PDSO-G64		3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0	.01 Amp	26.03 mm	60 ns
KM416V256D-TL6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.0001 Amp	18.41 mm	60 ns
KM428C256T-10	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Other Memory ICs	.8 mm	70 Cel		3-STATE	256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0	.01 Amp	18.41 mm	100 ns
KMM536512W3G-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel			512KX36	512K		SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	18874368 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				80 ns
KM44C256CSLZ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	60 ns
KMM532512W-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	254 mA	524288 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	512KX32	512K		SINGLE	1	R-XSMA-N72		5.5 V	25.4 mm		Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.004 Amp		70 ns
KM416C256ALLZ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words	YES	COMMON	5	5	16	IN-LINE	ZIP40,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.06 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00015 Amp		60 ns
KM44C256CP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	80 ns
KM44C256CSLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	24.56 mm	80 ns
KM416C256SLJ-10	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	105 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-J40		5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.035 mm	100 ns
KM418C256ATR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.41 mm	80 ns
KM416C256D-TL5	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.00015 Amp	18.41 mm	50 ns
KM416C156BLTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	18.41 mm	60 ns
KM416C256BTR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	70 ns
KMM536512B-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	804 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K		SINGLE	1	R-XSMA-N72		5.5 V	25.4 mm		Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.024 Amp		80 ns
KM41C1001CP-6	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	22.02 mm	60 ns
KM41C1002AP-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	TIN LEAD	DUAL		R-PDIP-T18	3				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
KM44C266CZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	70 ns
KM44C256P-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	TIN LEAD	DUAL		R-PDIP-T20	3				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
KM416C254BLLJ-5	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40		5.25 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp	25.535 mm	50 ns
KM44C256Z-12	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG		R-PZIP-T20	3				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
KM428C258TR-7	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	165 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Other Memory ICs	.8 mm	70 Cel			256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	18.41 mm	70 ns
KM418C256BLLTR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words	YES	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.00015 Amp	18.41 mm	80 ns
KMM59256BN-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	225 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	256KX9	256K		SINGLE	1	R-XSMA-N30		5.5 V	16.51 mm		Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
KM416V254BT-L7	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0	.0001 Amp	18.41 mm	70 ns
KM41C1000CSLT-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	17.14 mm	60 ns
KM41C1000DP-6	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.95 mm	60 ns
KMM591000A-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	630 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30		5.5 V	20.45 mm	5.08 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; WD-MAX		.009 Amp	88.9 mm	80 ns
KM41C1002CP-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	22.02 mm	60 ns
KMM58256BN-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	140 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	256KX8	256K		SINGLE	1	R-XSMA-N30		5.5 V			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
KM44C256CSLT-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	17.14 mm	80 ns
KM418C256ATR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.41 mm	60 ns
KM44C266CZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM428C258T-6	Samsung	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	185 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Other Memory ICs	.8 mm	70 Cel			256KX8	256K	TIN LEAD	DUAL	2	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	18.41 mm	60 ns
KM44C268BJ-10	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.68 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.145 mm	100 ns
KM41C1001CZ-6	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	60 ns
KM4216V255TF-7	Samsung	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		3-STATE	256KX16	256K		DUAL	2	R-PDSO-G64		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT			23.49 mm	70 ns
KM416V256ALLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words	YES	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		3.6 V	12.06 mm	2.96 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.0001 Amp		70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.