8192 DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC5164805BFTS-40	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp		20.95 mm	40 ns
THMY25E11B75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	33554432 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.009 Amp			5.4 ns
THMY12E11C75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	16777216 words		YES	COMMON	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		16MX16	16M		DUAL	1	R-XDMA-N168	3.6 V	25.53 mm	133 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX		.005 Amp		133.35 mm	5.4 ns
THMY12N11B80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.004 Amp			6 ns
THMD12N11B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N184	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
TC5164805BFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp		20.95 mm	50 ns
TC59SM908AFT-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THMD12E11B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
THLY25N01C80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		.008 Amp			6 ns
THMY12E11C80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	750 mA	16777216 words		YES	COMMON	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		16MX16	16M		DUAL	1	R-XDMA-N168	3.6 V	25.53 mm	125 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX		.005 Amp		133.35 mm	6 ns
THLY25N01C75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		.008 Amp			5.4 ns
TC59SM816CFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THLY12N11B75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.004 Amp			5.4 ns
THMY12N31C80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.004 Amp			6 ns
TC59SM816BFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THMY25E11C75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	33554432 words		YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX8	32M		DUAL	1	R-XDMA-N168	3.6 V	34.98 mm	133 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX		.009 Amp		133.35 mm	5.4 ns
TC5164165BFT-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp		20.95 mm	40 ns
TC5164405BJS-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp		20.96 mm	50 ns
THLD25N11B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N200	2.7 V	31.75 mm	133 MHz	3.8 mm	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH				67.6 mm	.75 ns
THMY12N11B75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.004 Amp			5.4 ns
TC59SM916AFT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
MC-428LFF721FH-A60	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1035 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL		R-PDMA-N168		31.75 mm			Not Qualified	603979776 bit				.0045 Amp			60 ns
MC-4216LFF721FH-A60	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1980 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL		R-PDMA-N168					Not Qualified	1207959552 bit				.009 Amp			60 ns
UPD4264800LE-A50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		135 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0	.0005 Amp			50 ns
UPD42S64400LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34					Not Qualified	67108864 bit			e0				80 ns
UPD4264165G5-A50	Renesas Electronics	EDO DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50					Not Qualified	67108864 bit			e0	.0005 Amp			50 ns
UPD4264800G5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	67108864 bit			e0	.0005 Amp			60 ns
UPD4264160G5-A50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50					Not Qualified	67108864 bit			e0	.0005 Amp			50 ns
UPD4264405LE-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		90 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0	.0005 Amp			60 ns
UPD4264405G5-A70	Renesas Electronics	EDO DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	67108864 bit			e0	.0005 Amp			70 ns
UPD4264800G7-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34					Not Qualified	67108864 bit			e0				60 ns
UPD4264400G7-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34					Not Qualified	67108864 bit			e0				80 ns
UPD45256441G5-A10L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	67108864 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	268435456 bit			e0	.001 Amp	1,2,4,8		6 ns
UPD4264400G7-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34					Not Qualified	67108864 bit			e0				60 ns
UPD42S64400LG-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34					Not Qualified	67108864 bit			e0				60 ns
MC-4216LFH641FB-A60	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL		R-PDMA-N168					Not Qualified	1073741824 bit				.008 Amp			60 ns
UPD4264800LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34					Not Qualified	67108864 bit			e0				80 ns
UPD4264805G5-A70	Renesas Electronics	EDO DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	67108864 bit			e0	.0005 Amp			70 ns
MC-4216LFH641FH-A60	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL		R-PDMA-N168					Not Qualified	1073741824 bit				.008 Amp			60 ns
UPD4264805LE-A50	Renesas Electronics	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		135 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0	.0005 Amp			50 ns
UPD4264160G5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50					Not Qualified	67108864 bit			e0	.0005 Amp			60 ns
UPD4264405G5-A60-7JD	Renesas Electronics	EDO DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	67108864 bit			e0	.0005 Amp			60 ns
UPD4264400LE-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		90 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0	.0005 Amp			80 ns
MC-4216LFH641FH-A50	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2080 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL		R-PDMA-N168					Not Qualified	1073741824 bit				.008 Amp			50 ns
UPD42S64800LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34					Not Qualified	67108864 bit			e0				80 ns
UPD4264405G5-A50	Renesas Electronics	EDO DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	67108864 bit			e0	.0005 Amp			50 ns
UPD45256163G5-A80-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	268435456 bit			e0	.001 Amp	1,2,4,8		6 ns
UPD4264800LE-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		105 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0	.0005 Amp			70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.