8192 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4H561638H-UCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		330 mA	16777216 words	2,4,8		COMMON	2.3	2.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	268435456 bit			e6		260	.003 Amp	2,4,8		.7 ns
K4H561638N-LCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		120 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	MATTE TIN	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	268435456 bit			e3	30	260	.003 Amp	2,4,8		.7 ns
K4H561638N-LCCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		140 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66				200 MHz		Not Qualified	268435456 bit			e6		260	.003 Amp	2,4,8		.65 ns
K4S511632B-UC75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		200 mA	33554432 words	1,2,4,8		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel		DUAL		R-PDSO-G54	3			133 MHz		Not Qualified	536870912 bit					260	.002 Amp	1,2,4,8		5.4 ns
K4S561632E-TC75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	180 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0		240	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
K4S561632E-TC75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	180 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.002 Amp	1,2,4,8	22.22 mm	5.4 ns
K4S561632E-TC75T00	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		180 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel		DUAL		R-PDSO-G54	1			133 MHz		Not Qualified	268435456 bit						.002 Amp	1,2,4,8		5.4 ns
K4S561632N-LI75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		80 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M		-40 Cel		DUAL		R-PDSO-G54	3			133 MHz		Not Qualified	268435456 bit					260	.002 Amp	1,2,4,8		5.4 ns
K4S56163LF-XG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS		BALL		165 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		5.4 ns
K4T1G164QF-BCE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		165 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3			333 MHz		Not Qualified	1073741824 bit			e1	30	260	.01 Amp	4,8		.45 ns
K4T1G164QF-BIE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		165 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M				BOTTOM		R-PBGA-B84	3			333 MHz		Not Qualified	1073741824 bit					260	.01 Amp	4,8		.45 ns
K4T1G164QG-BCE7	Samsung	DDR2 DRAM	OTHER	84	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN COPPER SILVER	BOTTOM	1	R-PBGA-B84		1.9 V	1 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				.01 Amp	4,8	12.5 mm	.4 ns
K4T51163QE-ZCE6	Samsung	DDR2 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		240 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90	3			333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
K4W1G1646G-BC11	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		195 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			MATTE TIN	BOTTOM		R-PBGA-B96	1			933 MHz		Not Qualified	1073741824 bit			e3			.01 Amp	8		.195 ns
KM48C8000AS-6	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	140 mA	8388608 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	60 ns
M368L2923DUN-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3560 mA	134217728 words		YES	COMMON	2.6	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-XDMA-N184	3	2.7 V	3.67 mm	200 MHz	31.75 mm	Not Qualified	8589934592 bit	2.5 V	AUTO/SELF REFRESH			260	.08 Amp		133.35 mm	.65 ns
M368L3223FTN-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	2800 mA	33554432 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		200 MHz		Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH							.65 ns
M378A5143DB0-CPB	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1180 mA	536870912 words		YES	COMMON	1.2	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	DRAMs		85 Cel	3-STATE	512MX64	512M		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1066 MHz	2.7 mm	Not Qualified	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.06 Amp		133.35 mm	.18 ns
M378B5673FH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1600 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M		0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			260	.16 Amp		133.35 mm	20 ns
M378T2863RZS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	2120 mA	134217728 words		YES	COMMON	1.8	1.8	8	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX8	128M		0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V	30 mm	333 MHz	4 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX			260			133.35 mm	.45 ns
M378T5263AZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3280 mA	536870912 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX64	512M		0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp			.4 ns
M378T5663RZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	2560 mA	268435456 words		YES	COMMON	1.8	1.8	8	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX8	256M		0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V	30 mm	400 MHz	2.7 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX			260	.24 Amp		133.35 mm	.4 ns
M378T6553CZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M		0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			260	.064 Amp			.5 ns
M378T6553EZS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1440 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M		0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			260	.064 Amp			.45 ns
M391T6553CZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1980 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M		0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.072 Amp			.5 ns
M393B1K70DH0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3420 mA	1073741824 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G		0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	800 MHz	4 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				1.062 Amp		133.35 mm
M393B1K70DH0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3050 mA	1073741824 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm	667 MHz	4 mm	Not Qualified	77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY				.9 Amp		133.35 mm	.25 ns
M393B2G70BH0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD			2147483648 words			COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	2GX72	2G		0 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	154618822656 bit									.255 ns
M393B5673GB0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1975 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.76 Amp		133.35 mm	20 ns
M464S3254CTS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	920 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			5.4 ns
M470T2864QZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1200 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V	3.8 mm	400 MHz	30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.12 Amp		67.6 mm	.4 ns
M471A5143DB0-CPB	Samsung	DDR DRAM MODULE	OTHER	260	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1180 mA	536870912 words		YES	COMMON	1.2	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM260,20	DRAMs	.5 mm	85 Cel	3-STATE	512MX64	512M		0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.15 mm	1066 MHz	3.7 mm	Not Qualified	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.06 Amp		69.6 mm	.18 ns
M471B1G73EB0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1060 mA	1073741824 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	68719476736 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			67.6 mm	.225 ns
M471B5773CHS-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1680 mA	268435456 words		YES	COMMON	1.5	1.5	8	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX8	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH			260	.096 Amp		67.6 mm	.25 ns
MT16HTF25664HIZ-667H1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3440 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M		-40 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm	333 MHz	3.8 mm	Not Qualified	17179869184 bit	1.7 V	SELF REFRESH; WD-MAX	e4			.112 Amp		67.6 mm
MT16HTF25664HY-800G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3760 mA	268435456 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M		0 Cel		DUAL		R-PDMA-N200				400 MHz		Not Qualified	17179869184 bit						.112 Amp			.4 ns
MT16HTF51264AY-667A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2780 mA	536870912 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX64	512M		0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	34359738368 bit						.128 Amp			.45 ns
MT18HTS25672RHZ-80EH1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3123 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M		0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e3					67.6 mm	.4 ns
MT40A4G4VA-062E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		4GX4	4G	1.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A512M16JY-075EAIT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	262 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	14 mm
MT40A8G4NEA-062E:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	308 mA	8589934592 words		YES	COMMON	1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X11,32		.8 mm	95 Cel		8GX4	8G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm		34359738368 bit	1.14 V							11 mm
MT41J128M16HA-187E:D	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	134217728 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	533 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.3 ns
MT41J128M8JP-15E:F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	490 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.125 ns
MT41J256M16HA-093:E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	305 mA	268435456 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	1066 MHz	9 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.018 Amp	8	14 mm	.18 ns
MT41K256M16HA-107IT:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	274 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1			.016 Amp	8	14 mm
MT41K256M16RE-15E:D	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	285 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	667 MHz	10 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH				.02 Amp	8	14 mm
MT41K512M16TNA-125:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	266 mA	536870912 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX16	512M		0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B96	3	1.425 V	1.2 mm	800 MHz	10 mm	Not Qualified	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.036 Amp	8	14 mm	.225 ns
MT41K512M16VRN-107AAT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	304 mA	536870912 words		YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.022 Amp		14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.