Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
EDO DRAM |
COMMERCIAL |
44 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
180 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
20.95 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
945 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
60 ns |
||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2-R |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS REFRESH |
17.14 mm |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
75 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
80 ns |
||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
16384 |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1568 mA |
16777216 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
1073741824 bit |
3 V |
AUTO/SELF REFRESH |
.016 Amp |
7.5 ns |
||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
16.51 mm |
Not Qualified |
2359296 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
150 ns |
||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
50 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
75 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
80 ns |
|||||||||||||||
Texas Instruments |
COMMERCIAL |
18 |
DIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
30 mA |
1024 words |
COMMON |
1 |
IN-LINE |
DIP18,.3 |
Other Memory ICs |
2.54 mm |
70 Cel |
1KX1 |
1K |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
80 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
27.305 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1050 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.01 Amp |
60 ns |
||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
4MX8 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
150 ns |
||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2 |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
18.41 mm |
80 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1160 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
33.147 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
70 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
95 mA |
262144 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
880 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
QUAD |
1 |
R-XQMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
NO LEAD |
262144 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
16.51 mm |
Not Qualified |
2097152 bit |
150 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
MOS |
J BEND |
ASYNCHRONOUS |
180 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
27.305 mm |
50 ns |
|||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
MOS |
GULL WING |
SYNCHRONOUS |
8388608 words |
YES |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
8MX8 |
8M |
0 Cel |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/AUTO/SELF REFRESH |
22.22 mm |
6 ns |
|||||||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
18 |
QCCN |
256 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
PAGE |
YES |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
65536 words |
5 |
1 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
0 Cel |
QUAD |
1 |
R-CQCC-N18 |
5.5 V |
2.18 mm |
7.24 mm |
Not Qualified |
65536 bit |
4.5 V |
RAS ONLY REFRESH |
12.32 mm |
150 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
670 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
18874368 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.04 Amp |
100 ns |
|||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
40 |
TSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
262144 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00035 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
CERAMIC |
NO |
MOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
600 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.004 Amp |
70 ns |
||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
32 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
2097152 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
2MX8 |
2M |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
20.95 mm |
80 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
MOS |
NO LEAD |
SYNCHRONOUS |
720 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
83.3 MHz |
Not Qualified |
268435456 bit |
3 V |
.008 Amp |
9.5 ns |
|||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
16777216 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
16MX8 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
85 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
17.145 mm |
70 ns |
||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
262144 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
18 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
75 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDIP-T18 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
22.48 mm |
80 ns |
||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
44 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
80 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
20.95 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
105 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.14 mm |
60 ns |
|||||||||||||||
Texas Instruments |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
STATIC COLUMN |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
65 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
1.83 mm |
7.47 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
16.51 mm |
100 ns |
||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
DUAL BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
4194304 words |
YES |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
CAS BEFORE RAS/SELF REFRESH |
18.41 mm |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
16384 |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
868 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
100 MHz |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
.016 Amp |
7.5 ns |
|||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
200 ns |
||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
1048576 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
17.145 mm |
120 ns |
||||||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
128 |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
16384 words |
SEPARATE |
+-5,12 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX1 |
16K |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
16384 bit |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
MOS |
NO LEAD |
SYNCHRONOUS |
1240 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
83.3 MHz |
Not Qualified |
134217728 bit |
3 V |
.016 Amp |
9 ns |
|||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
44 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
170 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
20.95 mm |
50 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2160 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
25.4 mm |
Not Qualified |
301989888 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
CAS BEFORE RAS |
17.14 mm |
70 ns |
||||||||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
UNSPECIFIED |
NIBBLE |
NO |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
16.51 mm |
Not Qualified |
2359296 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
120 ns |
||||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
65536 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
RAS ONLY REFRESH |
120 ns |
|||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.