COMMERCIAL DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TM4EJ64KPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			60 ns
TMS465409P-40DGC	Texas Instruments	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS	GULL WING	ASYNCHRONOUS	160 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		20.95 mm	40 ns
TM124MBK36F-80L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		36	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX36	1M		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
TMS44100P-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words		YES		5		1	IN-LINE				1.27 mm	70 Cel		4MX1	4M		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH							80 ns
TMS418160-60RE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M		DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						27.38 mm	60 ns
TMS416400PDJ-60	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		YES		5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH						17.145 mm	60 ns
TMS44800-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.415 mm	60 ns
TMS416400-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.415 mm	80 ns
TMS416100-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.415 mm	80 ns
TMS45160L-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; BYTE ACCESS		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		26.035 mm	100 ns
TMS426100-10DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		16MX1	16M		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						17.14 mm	100 ns
TMS427400A-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	70 ns
TM16TT64JPN-8A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH							6 ns
TMS426809A-60DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words				3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	2MX8	2M		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						18.41 mm	60 ns
5962-01-171-9696	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		DUAL		R-XDIP-T16					Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
TMS664814-12DGER	Texas Instruments	CACHE DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M		DUAL	2	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V							22.22 mm	8 ns
TM2TR72EPH-8A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	150 mA	2097152 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	150994944 bit	3 V					.001 Amp			6 ns
TMS664164-8ADGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		4MX16	4M		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/AUTO/SELF REFRESH						22.22 mm	6 ns
TMS426169P-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		27.305 mm	70 ns
TM497FBK32S-80	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	4MX32	4M		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
TMS416400DGA-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS						17.14 mm	70 ns
TM2SN64EPN-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1000 mA	2097152 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	GOLD	DUAL	1	R-PDMA-N168	3.6 V	28.7 mm	83.3 MHz		Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e4			.016 Amp		133.35 mm	8 ns
TMS44165S-10DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		95 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL		R-PDSO-G40					Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.0002 Amp			100 ns
TMS464160-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX16	4M		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.95 mm	60 ns
TMS4C1027-10DJL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX1	1M		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	100 ns
TMS416400DJ-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS						17.145 mm	70 ns
TMS55176-60DGE	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel	3-STATE	256KX16	256K		DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT						23.495 mm	60 ns
TMS44410-10DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	100 ns
TM4EP72BJN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1620 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.018 Amp		133.35 mm	70 ns
TMS416169P-60DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		27.305 mm	60 ns
5962-01-037-2094	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		60 mA	4096 words			SEPARATE			1	IN-LINE	DIP22,.4		Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		DUAL		R-XDIP-T22					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				250 ns
TM4256EU9-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30		16.51 mm			Not Qualified	2359296 bit									100 ns
TM124TBK40-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		1MX40	1M		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	41943040 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
TM4161EV4-20L	Texas Instruments	VIDEO DRAM MODULE	COMMERCIAL	31		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		4	MICROELECTRONIC ASSEMBLY	SIP31,.2		Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K		SINGLE	2	R-XSMA-T31	5.5 V				Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH; 256 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED				200 ns
TMS44460P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	1048576 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.145 mm	70 ns
TMS426809AP-60DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	2MX8	2M		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH						18.41 mm	60 ns
TMS428160-70DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	70 ns
TMS4C1025DJ-15	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		DUAL		R-PDSO-J20					Not Qualified	1048576 bit									150 ns
TM2TR64EPH-8A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	150 mA	2097152 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	134217728 bit	3 V					.001 Amp			6 ns
TMS426169-70DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	70 ns
SMJ4464-15FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	NO LEAD	ASYNCHRONOUS		65536 words				5		4	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX4	64K		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm		7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						12.32 mm	150 ns
TMS626402DGE-10	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	4194304 words	1,2,4,8		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M		DUAL		R-PDSO-G44			100 MHz		Not Qualified	16777216 bit						.001 Amp	1,2,4,8		9 ns
TMS664164-10DGER	Texas Instruments	CACHE DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		4MX16	4M		DUAL	2	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V							22.22 mm	7.5 ns
TMS416160A-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		90 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		DUAL		R-PDSO-J42					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			60 ns
TM893VBM40S-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		8MX40	8M		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	335544320 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
TMS4164-12NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K		DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			19.305 mm	120 ns
TM4256GP8-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	NO LEAD	ASYNCHRONOUS		262144 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	1	R-XSMA-N30	5.5 V	11.43 mm			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							150 ns
TM4257GU9-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS	NO LEAD	ASYNCHRONOUS		262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	1	R-XSMA-N30	5.5 V	16.51 mm			Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.