COMMERCIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41LC256K32D4LG-12	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	84 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20 mm	12.5 ns
MT4264-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		30 mA	65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	65536 bit			e0						150 ns
MT43C8128AEJ-7	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	200 mA	131072 words				5	5	8	CHIP CARRIER	LDCC52,.8SQ		Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	QUAD	3	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0			.002 Amp		19.1262 mm	70 ns
MT46H16M16LFBF-5:H	Micron Technology	LPDDR1 DRAM	COMMERCIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.0003 Amp	2,4,8,16	9 mm	5 ns
MT46V16M16P-5B	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	MATTE TIN	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260		2,4,8	22.22 mm	.7 ns
MT46V16M16P-5B:K	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	Matte Tin (Sn)	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260	.004 Amp	2,4,8	22.22 mm	.7 ns
MT46V32M16BN-6:F	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	405 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32		DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	166 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1	30	260	.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V32M16FN-5B:C	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8	YES	COMMON	2.6	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32		DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V64M8CY-5B:J	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	67108864 words	2,4,8	YES	COMMON	2.6	2.6	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32		DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e1	30	260	.005 Amp	2,4,8	12.5 mm	.7 ns
MT48LC16M16A2F4-7E:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M		BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e0	NOT SPECIFIED	NOT SPECIFIED			8 mm	5.4 ns
MT48LC16M16A2P-7E:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC32M16A2TG-75	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	255 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0			.0035 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC32M8A2P-7E:D	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	135 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC4M16A2P-75L:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e3			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC4M32B2TG-6A:L	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		4MX32	4M	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT4C4M4B1DJ-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-J24		5.5 V	3.66 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						18.44 mm	80 ns
MT4C4M4B1DW-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		18.44 mm	70 ns
MT4JSF12864HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1700 mA	134217728 words			COMMON	1.35	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	667 MHz	2.45 mm	Not Qualified	8589934592 bit	1.283 V	WD-MAX		NOT SPECIFIED	NOT SPECIFIED	.048 Amp		67.6 mm	.255 ns
MT4LC1M16C3TG-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	170 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	60 ns
MT4LC4M16R6TG-5	Micron Technology	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	30	235	.0005 Amp		20.95 mm	50 ns
MT4LSDT1664AY-133G1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	65 Cel	3-STATE	16MX64	16M		DUAL		R-PDMA-N168				133 MHz		Not Qualified	1073741824 bit						.008 Amp			5.4 ns
MT4VDDT3264AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1920 mA	33554432 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N184				200 MHz		Not Qualified	2147483648 bit						.02 Amp			.7 ns
MT8HTF12864HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2680 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.056 Amp		67.6 mm
MT8JSF25664HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2920 mA	268435456 words		YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	MATTE TIN	DUAL	1	R-PDMA-N204	1	1.575 V	30.15 mm	667 MHz	30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e3			.096 Amp		67.6 mm
MT8KTF25664HZ-1G6M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	268435456 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX	e4			.096 Amp		67.6 mm
MT8LDT432HG-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	4194304 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	TIN LEAD	DUAL	1	R-XDMA-N72		3.6 V	25.654 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.004 Amp			60 ns
MT8LDT432HG-6XL	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	4194304 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M		DUAL	1	R-XDMA-N72	1	3.6 V	25.654 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0012 Amp			60 ns
MT8MTF51264HSZ-1G6E2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		512MX64	512M		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		2.45 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm
MT9HTF12872RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		9663676416 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT9VDDT6472HIY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	3.8 mm		31.75 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4					67.6 mm
TC511000AZ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				1.27 mm	70 Cel		1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19		5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					25.8 mm	70 ns
TC5117405CSJ-60	Toshiba	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-J24		5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.15 mm	60 ns
TC5118160BJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		155 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42						Not Qualified	16777216 bit			e0			.001 Amp			70 ns
TC514400AFTL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		1MX4	1M	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0					17.14 mm	70 ns
THM365120AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		36	MICROELECTRONIC ASSEMBLY					70 Cel		512KX36	512K		SINGLE	1	R-XSMA-N72		5.25 V				Not Qualified	18874368 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
TMM41256AP-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T16		5.5 V	5 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; LG-MAX	e0					19.9 mm	100 ns
TMM416D-3	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified	16384 bit			e0						200 ns
TMM416P-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	MOS	THROUGH-HOLE	ASYNCHRONOUS		16384 words			SEPARATE	12	+-5,12	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	TIN LEAD	DUAL	1	R-PDIP-T16		13.2 V	5 mm		7.62 mm	Not Qualified	16384 bit	10.8 V	RAS ONLY REFRESH	e0						250 ns
TMS46400P-70DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		DUAL	1	R-PDSO-G20		3.6 V	1.27 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.14 mm	70 ns
TMS426409A-70DGA	Texas Instruments	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS	80 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	70 ns
TM024GAD8-10L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	520 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE	1	R-XSMA-N30		5.5 V	20.4978 mm			Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.016 Amp			100 ns
TMS45160-80DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL	1	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.41 mm	80 ns
TMS416169A-70DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		20.95 mm	70 ns
TMS416400A-50DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	J BEND	ASYNCHRONOUS	100 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	50 ns
TMS416160-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	80 ns
TM4256FL8-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	1	R-XSMA-T30		5.5 V	16.51 mm			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED				150 ns
TMS427800P-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M		DUAL	1	R-PDSO-J28		3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						18.415 mm	80 ns
TM124BBK32-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72		5.5 V	25.527 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.