Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
17.145 mm |
120 ns |
||||||||||||||||||||||||
Texas Instruments |
VIDEO DRAM |
COMMERCIAL |
28 |
ZIP |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
5 |
4 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
ZIG-ZAG |
2 |
R-CZIP-T28 |
5.5 V |
13.08 mm |
2.92 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT |
36.83 mm |
100 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
320 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
440 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2100 mA |
2097152 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
75497472 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.02 Amp |
60 ns |
||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
262144 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
95 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
32 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
16777216 words |
YES |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
20.95 mm |
70 ns |
|||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
70 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0003 Amp |
17.14 mm |
60 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
28 |
TSOP2 |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
120 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
18.41 mm |
50 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
50 mA |
4194304 words |
NO |
SEPARATE |
3.3 |
3.3 |
1 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0003 Amp |
17.14 mm |
80 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
444 mA |
8388608 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
60 ns |
||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
65 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
1.83 mm |
7.47 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
16.51 mm |
100 ns |
||||||||||||||||
Texas Instruments |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
STATIC COLUMN |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
17.145 mm |
100 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
2097152 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
18.415 mm |
80 ns |
||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
140 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
27.305 mm |
70 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
1680 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
60 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
110 mA |
524288 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
18.415 mm |
70 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
44 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
180 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
20.95 mm |
50 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
1440 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
70 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
80 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.14 mm |
80 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAS BEFORE RAS/SELF REFRESH |
17.14 mm |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
24 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
.001 Amp |
60 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
4 |
IN-LINE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
80 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
4 |
IN-LINE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
22 |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
SEPARATE |
5 |
5 |
4 |
MICROELECTRONIC ASSEMBLY |
SIP22,.2 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-T22 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
||||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2160 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
25.4 mm |
Not Qualified |
301989888 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2-R |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
18.41 mm |
80 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
90 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.14 mm |
70 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
42 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
130 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
27.305 mm |
50 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2-R |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
16777216 words |
YES |
5 |
1 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
16MX1 |
16M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH |
17.14 mm |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
2097152 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
66 MHz |
Not Qualified |
16777216 bit |
.003 Amp |
1,2,4,8 |
12 ns |
|||||||||||||||||||||||||
Texas Instruments |
VIDEO DRAM |
COMMERCIAL |
28 |
DIP |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
5 |
4 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
DUAL |
2 |
R-CDIP-T28 |
5.5 V |
3.56 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT |
120 ns |
|||||||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIP30,.2 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-T30 |
5.5 V |
11.43 mm |
Not Qualified |
2097152 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
520 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
50 ns |
||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
4194304 words |
YES |
3.3 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH |
17.145 mm |
50 ns |
|||||||||||||||||||||||
Texas Instruments |
COMMERCIAL |
22 |
DIP |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
60 mA |
4096 words |
SEPARATE |
1 |
IN-LINE |
DIP22,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
0 Cel |
DUAL |
R-PDIP-T22 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
28 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
120 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-J28 |
Not Qualified |
16777216 bit |
.001 Amp |
50 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2-R |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
17.14 mm |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2-R |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
YES |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
17.14 mm |
80 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
50 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.145 mm |
80 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
90 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-J42 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
75 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP20,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
DUAL |
1 |
R-PDIP-T20 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
24.325 mm |
80 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2-R |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
17.14 mm |
80 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
1048576 words |
YES |
3.3 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
27.38 mm |
80 ns |
||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
8388608 words |
YES |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
603979776 bit |
3 V |
AUTO/SELF REFRESH |
6 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
32 |
SOJ |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
4194304 words |
YES |
3.3 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
20.955 mm |
70 ns |
|||||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
960 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
25.4 mm |
Not Qualified |
134217728 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
50 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.