INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4E660812D-JI45	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	45 ns
K4F640412E-JP50T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0002 Amp			50 ns
K4E660412E-TI45	Samsung	EDO DRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		16MX4	16M	-40 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.95 mm	45 ns
K4F660412D-TP50T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	67108864 bit						.0002 Amp			50 ns
K4F641612D-TP60	Samsung	FAST PAGE DRAM	INDUSTRIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		4MX16	4M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						20.95 mm	60 ns
K4E640812D-TP45	Samsung	EDO DRAM	INDUSTRIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.95 mm	45 ns
K4B2G1646B-HPH90	Samsung	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	134217728 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1		260	.012 Amp	8	13.3 mm	.255 ns
K4F640412D-JI50T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0005 Amp			50 ns
K4E661612D-TP450	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL		R-PDSO-G50	1					Not Qualified	67108864 bit						.0002 Amp			45 ns
K4T51163QG-HPCC0	Samsung	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	200 MHz	7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH			260	.0045 Amp	4,8	12.5 mm	.6 ns
K4S64163LF-AP1H	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	52	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA52,6X13,30	DRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	1	R-PBGA-B52	3	2.7 V	1 mm	105 MHz	6.6 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	11 mm	7 ns
K4F66162D-TI60	Samsung	FAST PAGE DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G50	3					Not Qualified	67108864 bit			e0			.0005 Amp			60 ns
K4E640812D-TP50	Samsung	EDO DRAM	INDUSTRIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.95 mm	50 ns
K4H511638C-ZIB0T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.75 ns
K4H510838J-LPCCT	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		200 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.65 ns
K4S641632E-TP75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G54	3			133 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		5.4 ns
K4F640412E-JP600	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0002 Amp			60 ns
K4E640812E-JI50	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.96 mm	50 ns
K4F640812D-TP60T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	67108864 bit						.0002 Amp			60 ns
K4T51163QE-ZPE60	Samsung	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	4,8	13 mm	.45 ns
K4E640812E-JP60	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						20.96 mm	60 ns
K4T51163QE-ZPD5T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			266 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.5 ns
K4B4G1646D-BIK00	Samsung	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words				1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY		NOT SPECIFIED	NOT SPECIFIED			13.3 mm	.225 ns
K4E661612D-TP500	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL		R-PDSO-G50	1					Not Qualified	67108864 bit						.0002 Amp			50 ns
K4H561638J-LPB3T	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			167 MHz		Not Qualified	268435456 bit			e3			.004 Amp	2,4,8		.7 ns
K4F641612E-TP50	Samsung	FAST PAGE DRAM	INDUSTRIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH				.0002 Amp		20.95 mm	50 ns
K4E641612E-TP500	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL		R-PDSO-G50						Not Qualified	67108864 bit						.0002 Amp			50 ns
K4H510438J-LIB0T	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel	3-STATE	128MX4	128M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.75 ns
K4S561632B-TI75T	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		220 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G54	3			133 MHz		Not Qualified	268435456 bit			e0			.002 Amp	1,2,4,8		5.4 ns
K4S64323LF-DP75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	2097152 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm	133 MHz	11 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	13 mm	5.4 ns
K4F640812D-TI50T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	67108864 bit						.0005 Amp			50 ns
K4S161622E-TI50	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20.95 mm	4.5 ns
K4E640412E-TI45	Samsung	EDO DRAM	INDUSTRIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		16MX4	16M	-40 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.95 mm	45 ns
K4S561632C-TI1L	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX16	16M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH						22.22 mm	6 ns
K4H510438J-LPB0T	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel	3-STATE	128MX4	128M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.75 ns
K4H510838J-LIB30	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH			260	.005 Amp	2,4,8	22.22 mm	.7 ns
K4E660412E-JI600	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0005 Amp			60 ns
K4F660412D-TP500	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	67108864 bit						.0002 Amp			50 ns
K4F660412E-JI60	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		16MX4	16M	-40 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.96 mm	60 ns
K4S561633C-RP1L	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		3.6 V	1 mm	105 MHz	8.1 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	15.1 mm	7 ns
K4S561632B-TP75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
K4F640412E-JI45	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		16MX4	16M	-40 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.96 mm	45 ns
K4E661612E-TI450	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL		R-PDSO-G50						Not Qualified	67108864 bit						.0005 Amp			45 ns
K4F640812D-JP45T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0002 Amp			45 ns
K4E640412D-JP45	Samsung	EDO DRAM	INDUSTRIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.96 mm	45 ns
K4S561632N-LP75T	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	1			133 MHz		Not Qualified	268435456 bit			e3		260	.002 Amp	1,2,4,8		5.4 ns
K4S641632E-TI1H	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G54	3			100 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		6 ns
K4F660412E-JI50T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0005 Amp			50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.