MILITARY DRAM 541

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SMJ4C1024-12HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	120 ns
SMJ44C256-12HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		55 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL		R-XDSO-N20					Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.003 Amp			120 ns
SMJ626162-15DGEM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50	3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						20.95 mm
5962-9674302QXX	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					21 mm	70 ns
SMJ418160-70HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	MOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	70 ns
SMJ416100-70FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	80 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		19.685 mm	70 ns
SMJ4C1024-15SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	55 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		26.67 mm	150 ns
5962-9062201MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					22.86 mm	120 ns
5962-9062203MTX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V	4.44 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						23.085 mm	80 ns
SMJ44C251B-12HMM	Texas Instruments	VIDEO DRAM	MILITARY	28	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	100 mA	262144 words				5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-N28	5.5 V	2.54 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		18.288 mm	120 ns
SMJ44C256-15HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	NO LEAD	SYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	150 ns
SMJ4C1024-10JD	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						22.606 mm	100 ns
SMJ44C256-15HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH						17.145 mm	150 ns
5962-9084701MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	5	5	4	FLATPACK	FL20,.5	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-XDFP-F20	5.5 V	2.54 mm		12.45 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		17.78 mm	120 ns
5962-9084703MNA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		ZIG-ZAG	1	R-XZIP-T20	5.5 V	11.56 mm		2.92 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		26.67 mm	80 ns
SMJ44C251-10HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	110 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.521 mm		10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		18.542 mm	100 ns
SMJ55166-80GB	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY			2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V	3.62 mm		24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT						24.38 mm	80 ns
SMJ4C1024-15FQMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH						17.145 mm	150 ns
SMJ44400-15JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	3.56 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS REFRESH							150 ns
SMJ44400-12JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	3.556 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp			120 ns
5962-9062202MVX	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-CDIP-T16	5.5 V	3.93 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.32 mm	100 ns
SMJ4C1024-15FQ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	150 ns
5962-8949704MXX	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words				5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	2	R-XDIP-T28	5.5 V				Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				.015 Amp			100 ns
5962-9084701MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	QCCN	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	5	5	4	CHIP CARRIER	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		17.145 mm	120 ns
SMJ4C1024-10HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	SYNCHRONOUS	70 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	100 ns
SMJ44C256-10HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH						17.145 mm	100 ns
5962-8949704MYA	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCJ		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words				5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	2	R-XQCC-J28	5.5 V				Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0						100 ns
SMJ417400-70HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK			1.27 mm	125 Cel		4MX4	4M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						19.685 mm	70 ns
SMJ416400-70FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		19.685 mm	70 ns
5962-9084703MTX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	1.93 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	80 ns
5962-9062202MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDSO-N20	5.5 V	1.93 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.145 mm	100 ns
5962-9061701MRX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE			2.54 mm	125 Cel		256KX4	256K	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.93 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25.4 mm	150 ns
5962-9061702MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-GDIP-T20	5.5 V				Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp			120 ns
SMJ44C256-15FQM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	NO LEAD	SYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	150 ns
SMJ4C1024-10HK	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		1	FLATPACK			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.015 mm	100 ns
M38510/24402BEA	Texas Instruments	PAGE MODE DRAM	MILITARY	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16					Not Qualified	65536 bit									150 ns
SMJ626162-12HKDM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS		FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	3.465 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						21 mm	8 ns
SMJ626162HKD	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS		FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK				125 Cel		1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	3.465 V				Not Qualified	16777216 bit	3.135 V	AUTO REFRESH							8 ns
SMJ44C251-1JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.25 V	4.445 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						36.83 mm	100 ns
SMJ416400-80HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	70 mA	4194304 words		NO	COMMON	5	5	4	FLATPACK	FL28,.5	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		19.655 mm	80 ns
5962-9754503NYB	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-STD-883	GULL WING	SYNCHRONOUS	180 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50	3.465 V	1.2 mm	83 MHz	10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	12 ns
SMJ55160-80HKCM	Texas Instruments	VIDEO DRAM	MILITARY	64	GDFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		262144 words				5		16	FLATPACK, GUARD RING			.5 mm	125 Cel		256KX16	256K	-55 Cel		DUAL	2	R-CDFP-F64		3.81 mm		10.985 mm	Not Qualified	4194304 bit		CAS BEFORE RAS/HIDDEN REFRESH						18.485 mm	80 ns
5962-9061701MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel	TIN LEAD	DUAL	1	R-XDSO-J20	5.5 V	2.54 mm		8.385 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.145 mm	150 ns
5962-8949703MMA	Texas Instruments	VIDEO DRAM	MILITARY	28	ZIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	110 mA	262144 words				5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		ZIG-ZAG	2	R-XZIP-T28	5.5 V	13.08 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		36.83 mm	120 ns
SMJ416160-70HKD	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						21 mm	70 ns
SMJ44C256-12HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH						17.145 mm	120 ns
5962-9231202MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words				5		4	CHIP CARRIER			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24	5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0					19.69 mm	80 ns
5962-9674304QXX	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					21 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.