MILITARY DRAM 541

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
5962-9084702MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	QCCN	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	5	5	4	CHIP CARRIER	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		17.145 mm	100 ns
SMJ417100-10HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words				5		1	FLATPACK			1.27 mm	125 Cel		16MX1	16M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						19.685 mm	100 ns
5962-9564301QYX	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS		FLAT	ASYNCHRONOUS		262144 words				5		16	FLATPACK			.5 mm	125 Cel		256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64	5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4					18.985 mm	80 ns
SMJ44C256-15HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	150 ns
SMJ4C1024-12SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						26.67 mm	120 ns
SMJ44C256-10HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		65 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL		R-XDSO-N20					Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.003 Amp			100 ns
5962-9062203MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDSO-N20	5.5 V	4.26 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.775 mm	80 ns
5962-9062203MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		4194304 words				5		1	FLATPACK			1.27 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDFP-F20	5.5 V	2.54 mm		12.45 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.78 mm	80 ns
SMJ4C1024-15HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	55 mA	1048576 words			SEPARATE	5	5	1	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	150 ns
SMJ416400-80FNCMT	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		4MX4	4M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH						19.685 mm	80 ns
SMJ44C251B-10HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	110 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.52 mm		10.541 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		18.542 mm	100 ns
5962-8949703MXX	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	110 mA	262144 words				5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	2	R-XDIP-T28	5.5 V				Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				.015 Amp			120 ns
5962-9084701MTX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	1.93 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	120 ns
SMJ418160-60HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						21 mm	60 ns
SMJ4C1024-12JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		22.606 mm	120 ns
5962-9564301QYC	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	ASYNCHRONOUS	200 mA	262144 words				5	5	16	FLATPACK	TPAK64,1.6SQ,20	Other Memory ICs	.5 mm	125 Cel		256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64	5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4			.012 Amp		18.985 mm	80 ns
SMJ44C251-1HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.25 V	4.521 mm		10.541 mm	Not Qualified	1048576 bit	4.75 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						18.542 mm	100 ns
SMJ4C1024-15JD	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						22.606 mm	150 ns
SMJ4C1024-80HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH						17.145 mm	80 ns
5962-9231202MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0					19.685 mm	80 ns
5962-9061703MUX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		262144 words				5		4	FLATPACK			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-XDFP-F20	5.5 V	2.41 mm		9.652 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.02 mm	100 ns
SMJ44C251A-12HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	100 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.521 mm		10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		18.542 mm	120 ns
SMJ44400-12HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	65 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.56 mm		8.382 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		17.145 mm	120 ns
SMJ44C250-10HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	110 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.521 mm		10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		18.542 mm	100 ns
SMJ416400-70SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	DIP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDIP-T24	5.5 V	13.08 mm		2.92 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		31.75 mm	70 ns
SMJ4C1024-10HL	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	100 ns
SMJ44C256-80HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH						17.145 mm	80 ns
SMJ4C1024-80HJ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	80 ns
SMJ4C1024-15HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	55 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	150 ns
SMJ44C251B-12SVM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words				5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.5 V	13.08 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		36.83 mm	120 ns
SMJ44C256-12HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	60 mA	262144 words			COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	120 ns
SMJ416100-70FNC	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						19.685 mm	70 ns
SMJ4C1024-12FQ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	120 ns
SMJ55161-70HKCM	Texas Instruments	VIDEO DRAM	MILITARY	64	GDFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	225 mA	262144 words				5	5	16	FLATPACK, GUARD RING	TPAK64,1.6SQ,20	Other Memory ICs	.5 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		DUAL	2	R-CDFP-F64	5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		18.985 mm	70 ns
SMJ418160-80HKD	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						21 mm	80 ns
SMJ416400-80HKB	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK			1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						19.655 mm	80 ns
SMJ44C251A-2JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words				5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.25 V	4.445 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		36.83 mm	120 ns
5962-9061704MUX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		262144 words				5		4	FLATPACK			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-XDFP-F20	5.5 V	2.41 mm		9.652 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.02 mm	80 ns
5962-9084703MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-GDIP-T20	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp			80 ns
SMJ4C1024-80HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	75 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	80 ns
SMJ416100-60HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words				5		1	FLATPACK			1.27 mm	125 Cel		16MX1	16M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						19.685 mm	60 ns
5962-9754501NYB	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-STD-883	GULL WING	SYNCHRONOUS	175 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50	3.465 V	1.2 mm	66 MHz	10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	15 ns
SMJ4C1024-80SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						26.67 mm	80 ns
SM4C1024-10JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE			1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL		R-XDIP-T18					Not Qualified	1048576 bit									100 ns
SMJ44400-12HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	120 ns
SMJ4C1024-10HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	70 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	100 ns
5962-9231201MZA	Texas Instruments	FAST PAGE DRAM	MILITARY	24	DIP	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	60 mA	4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	2.54 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		ZIG-ZAG	1	R-XZIP-T24	5.5 V	13.08 mm		2.92 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		31.75 mm	100 ns
SMJ4164-15JDM	Texas Instruments	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16					Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.