MILITARY DRAM 541

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SMJ4C1024-10HJ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20		5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	100 ns
SMJ44C256-15HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		50 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL		R-XDSO-N20						Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.003 Amp			150 ns
5962-9454903QXX	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e0						75 ns
5962-9061702MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		262144 words				5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N18		5.5 V				Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0						120 ns
5962-9061702MUX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		262144 words				5		4	FLATPACK			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-XDFP-F20		5.5 V	2.41 mm		9.652 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.02 mm	120 ns
5962-9454903QYC	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	ASYNCHRONOUS	210 mA	262144 words				5	5	16	FLATPACK	TPAK64,1.6SQ,20	Other Memory ICs	.5 mm	125 Cel		256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64		5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4			.012 Amp		18.985 mm	75 ns
SMJ44400-10SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	80 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20		5.5 V	10.92 mm		2.92 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		26.67 mm	100 ns
SMJ4C1024-80HK	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		1	FLATPACK			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20		5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.015 mm	80 ns
5962-9084701MUA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-XDIP-T20		5.5 V	4.44 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		25.525 mm	120 ns
SMJ44C256-10HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	70 mA	262144 words			COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20		5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	100 ns
SMJ44C256-80SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	SYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T20		5.5 V	10.92 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		26.67 mm	80 ns
SMJ626162-15HKD	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	175 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		3.465 V	3.55 mm	66 MHz	16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	21 mm	9 ns
5962-9084702MNX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE			1.27 mm	125 Cel		1MX4	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20		5.5 V	11.43 mm		2.845 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						26.67 mm	100 ns
5962-01-246-8192	Texas Instruments	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
5962-9061703MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-GDIP-T20		5.5 V				Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp			100 ns
5962-9454901MYC	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	195 mA	262144 words				5	5	16	FLATPACK	TPAK64,1.6SQ,20	Other Memory ICs	.5 mm	125 Cel		256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64		5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4			.012 Amp		18.985 mm	80 ns
5962-9231203MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words				5		4	CHIP CARRIER			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24		5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0					19.69 mm	70 ns
SMJ4C1024-12HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	SYNCHRONOUS	60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20		5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	120 ns
5962-9231201MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	60 mA	4194304 words		NO	COMMON	5	5	4	FLATPACK	FL28,.5	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F28		5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0			.001 Amp		19.685 mm	100 ns
SMJ44C256-80HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	J BEND	SYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-J20		5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	80 ns
SMJ4C1024-80HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	SYNCHRONOUS	75 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20		5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	80 ns
5962-9084702MTX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDSO-N20		5.5 V	1.93 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	100 ns
SMJ416400-70FNC	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDSO-N24		5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						19.685 mm	70 ns
SMJ416100-70HKB	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words				5		1	FLATPACK			1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDFP-F28		5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						19.655 mm	70 ns
5962-9674303QXX	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					21 mm	80 ns
5962-9231201MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F28		5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0					19.685 mm	100 ns
5962-9061703MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel	TIN LEAD	DUAL	1	R-XDSO-J20		5.5 V	2.54 mm		8.385 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.145 mm	100 ns
5962-9084702MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		4	FLATPACK			1.27 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDFP-F20		5.5 V	2.54 mm		12.446 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.78 mm	100 ns
5962-9564303QXX	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68		5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT							75 ns
5962-9062202MNX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel		ZIG-ZAG	1	R-PZIP-T20		5.5 V	11.42 mm		2.85 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						26.67 mm	100 ns
SMJ44C256-10JD	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T20		5.5 V					1048576 bit	4.5 V	CAS BEFORE RAS REFRESH							10 ns
5962-9061701MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	J BEND	ASYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-XDSO-J20		5.5 V	2.54 mm		8.385 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		17.145 mm	150 ns
5962-9061704MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		262144 words				5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N18		5.5 V				Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0						80 ns
M38510/24604BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words			COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K	-55 Cel		DUAL		R-XDIP-T16		5.5 V				Not Qualified	262144 bit	4.5 V					.01 Amp			150 ns
M38510/24602BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words			COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K	-55 Cel		DUAL		R-XDIP-T16		5.5 V				Not Qualified	262144 bit	4.5 V					.01 Amp			150 ns
MT4C4001JC-8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20	1					Not Qualified	4194304 bit						.002 Amp			80 ns
MT4C1024C10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		70 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18						Not Qualified	1048576 bit			e0			.001 Amp			100 ns
MT4C1259C12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL	1	R-CDIP-T16		5.5 V	3.93 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.32 mm	120 ns
MT4C1024F-12883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		60 mA	1048576 words			SEPARATE	5	5	1	FLATPACK	FL20,.3	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F20						Not Qualified	1048576 bit			e0			.001 Amp			120 ns
MT4C4001JF-12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		70 mA	1048576 words		NO	COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDFP-F20						Not Qualified	4194304 bit						.002 Amp			120 ns
MT1259C-12XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified	262144 bit			e0						120 ns
MT4C1004JCN10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	65 mA	4194304 words		NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V	3.93 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.002 Amp		22.86 mm	90 ns
MT4C4001JCZ-10	Micron Technology	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		80 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		ZIG-ZAG		R-XZIP-T20						Not Qualified	4194304 bit						.002 Amp			100 ns
MT4C1024C12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18						Not Qualified	1048576 bit			e0			.001 Amp			120 ns
MT1259EC-20XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words			SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD								Not Qualified	262144 bit			e0						200 ns
MT4C1004EC-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	QCCN	1024	SQUARE	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD			4194304 words		NO	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.35SQ	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	QUAD		S-XQCC-N20						Not Qualified	4194304 bit			e0						100 ns
MT4C1024F-10883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		70 mA	1048576 words			SEPARATE	5	5	1	FLATPACK	FL20,.3	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F20						Not Qualified	1048576 bit			e0			.001 Amp			100 ns
MT4C4001JC-10	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		80 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20						Not Qualified	4194304 bit						.002 Amp			100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.