MILITARY DRAM 541

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT4C1004JCZ8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	75 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	ZIG-ZAG	1	R-CZIP-T20	5.5 V	11.43 mm	2.845 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	26.67 mm	80 ns
MT4C1259C10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.32 mm	100 ns
MT4C4001JC-10XT	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	4194304 bit				.002 Amp		100 ns
MT4C4001JCN-8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	4194304 bit				.002 Amp		80 ns
MT4C4067C10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.008 Amp	22.86 mm	100 ns
MT4C4256C12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		50 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT4C4001JC-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	4194304 bit				.002 Amp		100 ns
MT4C1024EC8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		70 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N20				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C4001JC-12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	4194304 bit				.002 Amp		120 ns
MT4C4001JEC-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		80 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDSO-N20				Not Qualified	4194304 bit				.002 Amp		100 ns
MT4C4256EC12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		50 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N20				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT4C1004JCN8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	75 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	22.86 mm	80 ns
MT4C1024EC12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		60 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N20				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT4C4001JCZ-12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		ZIG-ZAG		R-XZIP-T20				Not Qualified	4194304 bit				.002 Amp		120 ns
MT4C4001JCZ-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		ZIG-ZAG		R-XZIP-T20				Not Qualified	4194304 bit				.002 Amp		100 ns
MT4C4001JCZ-8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		ZIG-ZAG		R-XZIP-T20				Not Qualified	4194304 bit				.002 Amp		80 ns
MT4C1004JCZ12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	65 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-CZIP-T20	5.5 V	11.43 mm	2.845 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	26.67 mm	120 ns
MT4C4001JEC-8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		90 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDSO-N20				Not Qualified	4194304 bit				.002 Amp		80 ns
MT42C4256C-15/883C	Micron Technology	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		115 mA	262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28				Not Qualified	1048576 bit			e0	.01 Amp		150 ns
MT4264C-15XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			150 ns
MT4C1004EC-15/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	QCCN	1024	SQUARE	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD			4194304 words	NO	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.35SQ	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	QUAD		S-XQCC-N20				Not Qualified	4194304 bit			e0			150 ns
MT4C1024EC10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		70 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N20				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C4067C12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.008 Amp	22.86 mm	120 ns
MT4C1004JC12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		70 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.4	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4194304 bit			e0	.002 Amp		120 ns
MT4C1024F-15883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		50 mA	1048576 words		SEPARATE	5	5	1	FLATPACK	FL20,.3	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F20				Not Qualified	1048576 bit			e0	.001 Amp		150 ns
MT4264C-12XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			120 ns
MT4C4256EC8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N20				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C4256C8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C1004JC10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.4	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4194304 bit			e0	.002 Amp		100 ns
MT4C4001JEC-12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		70 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDSO-N20				Not Qualified	4194304 bit				.002 Amp		120 ns
MT4C1259C15/883C	Micron Technology	FAST PAGE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.32 mm	150 ns
MT4C4001JCN-10XT	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	4194304 bit				.002 Amp		100 ns
MT4C1004EC-12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	QCCN	1024	SQUARE	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD			4194304 words	NO	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.35SQ	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	QUAD		S-XQCC-N20				Not Qualified	4194304 bit			e0			120 ns
MT4C4001JC-10E	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	4194304 bit				.002 Amp		100 ns
MT42C4256C8/883C	Micron Technology	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	150 mA	262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		8 ns
MT4C4001JF-8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		90 mA	1048576 words	NO	COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDFP-F20				Not Qualified	4194304 bit				.002 Amp		80 ns
MT4C1024C15/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		50 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		150 ns
M38510/24603BEX	Micron Technology	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words		COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K	-55 Cel		DUAL		R-XDIP-T16	5.5 V			Not Qualified	262144 bit	4.5 V			.01 Amp		120 ns
MT4C1024C8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C1004JCN12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	65 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	22.86 mm	120 ns
MT4C4067C15/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.008 Amp	22.86 mm	150 ns
MT4C1004JC8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.4	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4194304 bit			e0	.002 Amp		80 ns
MT1259EC-12XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0			120 ns
MT4C1004JCZ10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	65 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-CZIP-T20	5.5 V	11.43 mm	2.845 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	26.67 mm	90 ns
MT4C4001JCN-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20				Not Qualified	4194304 bit				.002 Amp		100 ns
MT4C4256EC10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		60 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N20				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT1259EC-10XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0			100 ns
MT1259C-10XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.