MILITARY DRAM 541

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

5962-9062201MUX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

4MX1

4M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

1.93 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

120 ns

SMJ4C1024-10FQM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

SYNCHRONOUS

70 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOLCC20/26,.35

DRAMs

1.27 mm

125 Cel

3-STATE

1MX1

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.34 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

17.145 mm

100 ns

SMJ4C1024-15HL

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

1MX1

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

150 ns

5962-9084703MXA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DFP

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

FLAT

ASYNCHRONOUS

90 mA

1048576 words

NO

COMMON

5

5

4

FLATPACK

FL20,.5

DRAMs

1.27 mm

125 Cel

3-STATE

1MX4

1M

-55 Cel

DUAL

1

R-XDFP-F20

5.5 V

2.54 mm

12.45 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

17.78 mm

80 ns

SMJ55166-70GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

225 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

70 ns

5962-9564303QXA

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

MIL-PRF-38535 Class Q

PIN/PEG

ASYNCHRONOUS

225 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

75 ns

SMJ44C256-80FQMT

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

MOS

MIL-PRF-38535

NO LEAD

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

256KX4

256K

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.34 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

17.145 mm

80 ns

SMJ44400-12JDBM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

SYNCHRONOUS

70 mA

1048576 words

NO

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

125 Cel

3-STATE

1MX4

1M

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

5.08 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

25.4 mm

120 ns

5962-9062203MNA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

ZIP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

1.27 mm

125 Cel

4MX1

4M

-55 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T20

5.5 V

11.42 mm

2.85 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

26.67 mm

80 ns

5962-9564303QYC

Texas Instruments

VIDEO DRAM

MILITARY

64

DFP

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

YES

1

CMOS

MIL-PRF-38535 Class Q

FLAT

ASYNCHRONOUS

225 mA

262144 words

5

5

16

FLATPACK

TPAK64,1.6SQ,20

Other Memory ICs

.5 mm

125 Cel

256KX16

256K

-55 Cel

GOLD

DUAL

2

R-XDFP-F64

5.5 V

3.81 mm

10.985 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

e4

.012 Amp

18.985 mm

75 ns

SMJ4164-20JDM

Texas Instruments

PAGE MODE DRAM

MILITARY

16

DIP

256

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

65536 words

SEPARATE

5

5

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

125 Cel

3-STATE

64KX1

64K

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

200 ns

5962-9062201MUA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

MIL-STD-883

NO LEAD

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

4MX1

4M

-55 Cel

TIN LEAD

DUAL

1

R-CDSO-N20

5.5 V

1.93 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.145 mm

120 ns

5962-9061704MRX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

125 Cel

256KX4

256K

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T20

5.5 V

3.93 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.4 mm

80 ns

5962-01-346-7327

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SOJ

512

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

J BEND

60 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

R-XDSO-J20

Not Qualified

1048576 bit

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

120 ns

SMJ44C256-12JDM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

SYNCHRONOUS

60 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

4.45 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

120 ns

SMJ418160-70HKD

Texas Instruments

FAST PAGE DRAM

MILITARY

50

DFP

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

FLAT

ASYNCHRONOUS

1048576 words

5

16

FLATPACK

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-CDFP-F50

5.5 V

3.55 mm

16.5 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

21 mm

70 ns

5962-9061702MRX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

125 Cel

256KX4

256K

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T20

5.5 V

3.93 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.4 mm

120 ns

SMJ44C256-12SVM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

SYNCHRONOUS

60 mA

262144 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

10.92 mm

2.92 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

26.67 mm

120 ns

SMJ55166-75HKC

Texas Instruments

VIDEO DRAM

MILITARY

64

GDFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

YES

1

CMOS

FLAT

ASYNCHRONOUS

262144 words

5

16

FLATPACK, GUARD RING

.5 mm

125 Cel

256KX16

256K

-55 Cel

DUAL

2

R-CDFP-F64

5.5 V

3.81 mm

10.985 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

18.985 mm

75 ns

SMJ4C1024-12HLMT

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

MOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

1MX1

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

17.145 mm

120 ns

5962-9062202MUA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

MIL-STD-883

NO LEAD

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

125 Cel

4MX1

4M

-55 Cel

TIN LEAD

DUAL

1

R-CDSO-N20

5.5 V

1.93 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.145 mm

100 ns

SMJ416400-80SV

Texas Instruments

FAST PAGE DRAM

MILITARY

24

ZIP

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

4

IN-LINE

2.54 mm

125 Cel

3-STATE

4MX4

4M

-55 Cel

ZIG-ZAG

1

R-CZIP-T24

5.5 V

13.08 mm

2.92 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

31.75 mm

80 ns

SMJ44100-10JDBM

Texas Instruments

FAST PAGE DRAM

MILITARY

18

DIP

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

ASYNCHRONOUS

80 mA

4194304 words

NO

SEPARATE

5

5

1

IN-LINE

DIP18,.3

DRAMs

2.54 mm

125 Cel

3-STATE

4MX1

4M

-55 Cel

DUAL

1

R-CDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

22.86 mm

100 ns

5962-9754503NYX

Texas Instruments

SYNCHRONOUS DRAM

MILITARY

50

TSOP2

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

MIL-STD-883

GULL WING

SYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

125 Cel

1MX16

1M

-55 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.465 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3.135 V

AUTO REFRESH

e0

20.95 mm

12 ns

SMJ44C256-12FQMT

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

MOS

MIL-PRF-38535

NO LEAD

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

256KX4

256K

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.34 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

17.145 mm

120 ns

SMJ626162-12DGE

Texas Instruments

SYNCHRONOUS DRAM

MILITARY

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

MIL-PRF-38535 Class N

GULL WING

SYNCHRONOUS

180 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-PDSO-G50

3.465 V

1.2 mm

83 MHz

10.16 mm

Not Qualified

16777216 bit

3.135 V

AUTO REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

1,2,4,8

20.95 mm

8 ns

5962-9062203MXX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DFP

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

FLAT

ASYNCHRONOUS

4194304 words

5

1

FLATPACK

1.27 mm

125 Cel

4MX1

4M

-55 Cel

DUAL

1

R-XDFP-F20

5.5 V

2.54 mm

12.45 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.78 mm

80 ns

SMJ44C251B-12HJM

Texas Instruments

VIDEO DRAM

MILITARY

28

SOJ

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

J BEND

ASYNCHRONOUS

100 mA

262144 words

5

5

4

SMALL OUTLINE

SOJ28,.4

Other Memory ICs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

2

R-CDSO-J28

5.5 V

4.52 mm

10.541 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.015 Amp

18.542 mm

120 ns

5962-9061703MRX

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

2.54 mm

125 Cel

256KX4

256K

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T20

5.5 V

3.93 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.4 mm

100 ns

SMJ44400-80HMM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

ASYNCHRONOUS

85 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOLCC20/26,.4

DRAMs

1.27 mm

125 Cel

3-STATE

1MX4

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.337 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

17.78 mm

80 ns

5962-8949703MZX

Texas Instruments

VIDEO DRAM

MILITARY

28

QCCN

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

NO LEAD

ASYNCHRONOUS

110 mA

262144 words

5

5

4

CHIP CARRIER

SOLCC28,.4

Other Memory ICs

1.27 mm

125 Cel

256KX4

256K

-55 Cel

QUAD

2

R-XQCC-N28

5.5 V

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

.015 Amp

120 ns

SMJ55166-80GBM

Texas Instruments

VIDEO DRAM

MILITARY

68

PGA

512

SQUARE

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

ASYNCHRONOUS

200 mA

262144 words

5

5

16

GRID ARRAY

PGA68,9X9

Other Memory ICs

2.54 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

PERPENDICULAR

2

S-CPGA-P68

5.5 V

24.38 mm

Not Qualified

4194304 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

24.38 mm

80 ns

SMJ4164-15FGM

Texas Instruments

PAGE MODE DRAM

MILITARY

18

QCCN

256

RECTANGULAR

CERAMIC

YES

MOS

38535Q/M;38534H;883B

NO LEAD

65536 words

SEPARATE

5

5

1

CHIP CARRIER

LCC18,.3X.43

DRAMs

1.27 mm

125 Cel

3-STATE

64KX1

64K

-55 Cel

QUAD

R-XQCC-N18

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

150 ns

SMJ44C256-80JDM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

SYNCHRONOUS

80 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

4.45 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

80 ns

SMJ417400-60FNCM

Texas Instruments

FAST PAGE DRAM

MILITARY

24

SON

2048

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

4MX4

4M

-55 Cel

DUAL

1

R-CDSO-N24

5.5 V

3.18 mm

11.43 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

19.685 mm

60 ns

SMJ44C256-10HLM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

MIL-PRF-38535

NO LEAD

SYNCHRONOUS

70 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOLCC20/26,.35

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

17.145 mm

100 ns

5962-8949704MMX

Texas Instruments

VIDEO DRAM

MILITARY

28

ZIP

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

1.27 mm

125 Cel

256KX4

256K

-55 Cel

ZIG-ZAG

2

R-XZIP-T28

5.5 V

13.08 mm

2.92 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

36.83 mm

100 ns

SMJ55166-80HKCM

Texas Instruments

VIDEO DRAM

MILITARY

64

GDFP

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

ASYNCHRONOUS

200 mA

262144 words

5

5

16

FLATPACK, GUARD RING

TPAK64,1.6SQ,20

Other Memory ICs

.5 mm

125 Cel

3-STATE

256KX16

256K

-55 Cel

DUAL

2

R-CDFP-F64

5.5 V

3.81 mm

10.985 mm

Not Qualified

4194304 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.012 Amp

18.985 mm

80 ns

SMJ44C256-12HJM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SOJ

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

MIL-PRF-38535

J BEND

SYNCHRONOUS

60 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-CDSO-J20

5.5 V

3.48 mm

8.382 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

17.145 mm

120 ns

SMJ4C1024-80SVM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

DIP

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

SYNCHRONOUS

75 mA

1048576 words

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

125 Cel

3-STATE

1MX1

1M

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

10.92 mm

2.92 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

26.67 mm

80 ns

5962-9231202MZX

Texas Instruments

FAST PAGE DRAM

MILITARY

24

DIP

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

4

IN-LINE

2.54 mm

125 Cel

4MX4

4M

-55 Cel

TIN LEAD

ZIG-ZAG

1

R-XZIP-T24

5.5 V

13.08 mm

2.92 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS REFRESH

e0

31.75 mm

80 ns

SMJ416160-80HKDM

Texas Instruments

FAST PAGE DRAM

MILITARY

50

DFP

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

YES

1

MOS

38535Q/M;38534H;883B

FLAT

ASYNCHRONOUS

70 mA

1048576 words

NO

COMMON

5

5

16

FLATPACK

FL50,.67,32

DRAMs

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-CDFP-F50

5.5 V

3.55 mm

16.5 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

21 mm

80 ns

SMJ626162-20HKD

Texas Instruments

SYNCHRONOUS DRAM

MILITARY

50

DFP

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

DUAL BANK PAGE BURST

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

SYNCHRONOUS

150 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

16

FLATPACK

FL50,.67,32

DRAMs

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-CDFP-F50

3.465 V

3.55 mm

50 MHz

16.5 mm

Not Qualified

16777216 bit

3.135 V

AUTO REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

1,2,4,8

21 mm

10 ns

5962-9454903QYA

Texas Instruments

VIDEO DRAM

MILITARY

64

DFP

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

YES

1

CMOS

FLAT

ASYNCHRONOUS

262144 words

5

16

FLATPACK

.5 mm

125 Cel

256KX16

256K

-55 Cel

TIN LEAD

DUAL

2

R-XDFP-F64

5.5 V

3.81 mm

10.985 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

e0

18.985 mm

75 ns

5962-8949703MXA

Texas Instruments

VIDEO DRAM

MILITARY

28

DIP

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

4

IN-LINE

125 Cel

256KX4

256K

-55 Cel

TIN LEAD

DUAL

2

R-XDIP-T28

5.5 V

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

e0

120 ns

SMJ416400-80FNCM

Texas Instruments

FAST PAGE DRAM

MILITARY

24

SON

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

SYNCHRONOUS

70 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOLCC24/28,.45

DRAMs

1.27 mm

125 Cel

3-STATE

4MX4

4M

-55 Cel

DUAL

1

R-CDSO-N24

5.5 V

3.18 mm

11.43 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

19.685 mm

80 ns

5962-9061702MXA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SOJ

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

J BEND

ASYNCHRONOUS

60 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

1

R-XDSO-J20

5.5 V

2.54 mm

8.385 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

17.145 mm

120 ns

SMJ44C251A-2HJM

Texas Instruments

VIDEO DRAM

MILITARY

28

SOJ

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

J BEND

ASYNCHRONOUS

100 mA

262144 words

5

5

4

SMALL OUTLINE

SOJ28,.44

Other Memory ICs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

2

R-CDSO-J28

5.25 V

4.521 mm

10.541 mm

Not Qualified

1048576 bit

4.75 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.015 Amp

18.542 mm

120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.