OTHER DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M471B5773EB0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1344 mA	268435456 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	17179869184 bit						.08 Amp			.255 ns
M393T5663AZA-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH							.45 ns
K4T2G044QA-HCD5	Samsung	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	536870912 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B68	3	1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	18 mm	.5 ns
M378T2863DZS-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	4 mm	200 MHz	30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			133.35 mm	.6 ns
K4M51163LE-YL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	536870912 bit			e0			.0015 Amp	1,2,4,8		7 ns
M391T6553BZ0-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2475 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		267 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH				.072 Amp			.5 ns
M378T6553CZ0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			260	.064 Amp			.6 ns
K4Y50084UC-JCB30	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1200 mA	67108864 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	35 ns
K4M56163PG-BF1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		65 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	268435456 bit			e3			.00001 Amp	1,2,4,8		7 ns
K4S51153PF-PF900	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	1.95 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	7 ns
K4M51163LC-BL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	33554432 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	2.7 V	1 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH			260	.001 Amp	1,2,4,8	11.5 mm	5.4 ns
M393T2863QZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2025 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH			260	.135 Amp			.6 ns
K4V1G323PC-SGC30	Samsung	DDR1 DRAM	OTHER	152	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA152,21X21,25	DRAMs	.635 mm	85 Cel	3-STATE	32MX32	32M	-25 Cel		BOTTOM		S-PBGA-B152	1			133 MHz		Not Qualified	1073741824 bit						.0006 Amp	2,4,8,16		6 ns
K4M56323LE-EC80	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm	125 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	6 ns
K4M56323PG-FG90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	8388608 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	268435456 bit						.0003 Amp	1,2,4,8		7 ns
M391B5273DH0-K00	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH						133.35 mm	.225 ns
K4T51043QE-ZLE70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	215 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.005 Amp	4,8	11 mm	.4 ns
K4S643233H-FF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4M28163LH-BN75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			133 MHz		Not Qualified	134217728 bit			e3			.0005 Amp	1,2,4,8		5.4 ns
M392B2G70BM0-CK0	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4080 mA	2147483648 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	154618822656 bit									.225 ns
M392B1K70CM0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4940 mA	1073741824 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	18.9 mm	667 MHz		Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	1.042 Amp		133.35 mm	20 ns
K4M51323LC-DG750	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	2	2.7 V	1 mm	133 MHz	11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.001 Amp	1,2,4,8	13 mm	5.4 ns
K4M56323LG-HN75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			133 MHz		Not Qualified	268435456 bit			e3			.001 Amp	1,2,4,8		5.4 ns
K4M513233E-MF75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	536870912 bit			e0			.0015 Amp	1,2,4,8		5.4 ns
K4M513233E-EL1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		330 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90	3			105 MHz		Not Qualified	536870912 bit					260	.0015 Amp	1,2,4,8		7 ns
K4S64323LF-SG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	2097152 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm	100 MHz	11 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	13 mm	7 ns
K4B2G0846Q-BYH90	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						11 mm
K4M28323LH-HL75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		5.4 ns
K4T51043QC-ZCE6	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
M392B1K70CM0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4580 mA	1073741824 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm	667 MHz	4 mm	Not Qualified	77309411328 bit	1.28 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX			260	1.04 Amp		133.35 mm	.255 ns
K4B4G0446B-MCH9T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	1073741824 words			COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B78	1			667 MHz		Not Qualified	4294967296 bit			e3			.024 Amp
K4M28323PH-HC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	1.95 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH				.0003 Amp	1,2,4,8	13 mm	7 ns
K4T51043QM-GCC4	Samsung	DDR2 DRAM	OTHER	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX4	128M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		1.9 V	1 mm		12.3 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					14.5 mm	.6 ns
K4S561633F-ZF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	268435456 bit						.0005 Amp	1,2,4,8		7 ns
M378T6553GZS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			260	.064 Amp			.45 ns
K4T51163QE-ZLE7T	Samsung	DDR2 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			400 MHz		Not Qualified	536870912 bit			e3			.005 Amp	4,8		.4 ns
K4M283233H-HG60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		60 ns
K4M641633K-RG1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
K4Y50044UE-JCC4	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1110 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			28 ns
K4B510846E-ZCG8	Samsung	DDR3 DRAM	OTHER	82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B82				533 MHz		Not Qualified	536870912 bit							8		.265 ns
K4M64163LK-BF75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		5.4 ns
K4M641633K-RN750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	8 mm	5.4 ns
K4S561632C-TE1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX16	16M	-25 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH						22.22 mm	6 ns
M395T2953CZ4-CD51	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3500 mA	134217728 words			COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			266 MHz		Not Qualified	9663676416 bit			e3
K4M51163LC-BN1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
K4Y50084UC-JCA20	Samsung	RAMBUS DRAM	OTHER	104	TBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	980 mA	67108864 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA104,11X16,50/32	DRAMs	1.27 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B104	2	1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	SELF CONTAINED REFRESH	e1			.025 Amp		14.5 mm	36 ns
K4M561633G-BF75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM	1	R-PBGA-B54	1	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e3			.001 Amp	1,2,4,8	11 mm	5.4 ns
M470T2864DZ3-CF7	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.12 Amp			.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.