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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4S64163LH-BE750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						8 mm	5.4 ns
K4S641633H-RF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			8 mm	7 ns
K4T1G164QQ-HLF70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	265 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	4,8	13 mm	.4 ns
K4M513233C-DN7LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		5.4 ns
K4N56163QI-ZC2A0	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	350 MHz	9 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.01 Amp	4,8	13 mm	.45 ns
K4M28163LF-BR1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		7 ns
K4M51163LE-YF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	33554432 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	536870912 bit			e0			.0015 Amp	1,2,4,8		7 ns
K4M56323LE-ER1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	7 ns
M391T2953CZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2745 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.4 ns
K4S563233F-HF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
M393T5750EZA-CE7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.4 ns
M392T5660CZA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH							.4 ns
K4M64163LK-BN750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e1		260	.0005 Amp	1,2,4,8	8 mm	5.4 ns
K4S64323LH-HL600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S64323LF-DU15	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	2097152 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm	66 MHz	11 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	13 mm	9 ns
M470T3354CZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	3	1.9 V		267 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH			260				.5 ns
K4M56323PG-FC1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	8388608 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	268435456 bit						.0003 Amp	1,2,4,8		7 ns
K4M56163PG-RE1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		65 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	268435456 bit						.00001 Amp	1,2,4,8		7 ns
K4M56323LG-HN60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			167 MHz		Not Qualified	268435456 bit			e3			.001 Amp	1,2,4,8		5.4 ns
K4M28163PH-BC900	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	85 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	2	1.95 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	8 mm	7 ns
K4S64163LF-RF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		2.7 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	8 mm	5.4 ns
M395T5663FB4-CE68	Samsung	DDR2 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4895 mA	268435456 words		YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N204	2	1.9 V	30.5 mm	333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260			133.35 mm
K4N56163QG-GC22T	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		420 mA	16777216 words	4,8		COMMON	2	2	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM		R-PBGA-B84				450 MHz		Not Qualified	268435456 bit					240	.01 Amp	4,8		.35 ns
M470T5663QZ3-LE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2120 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V	3.8 mm	333 MHz	30 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH			260	.128 Amp		67.6 mm	.45 ns
M471A5143DB0-CRC	Samsung	DDR DRAM MODULE	OTHER	260	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	536870912 words		YES	COMMON	1.2	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM260,20	DRAMs	.5 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.15 mm	1200 MHz	3.7 mm	Not Qualified	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.06 Amp		69.6 mm	.175 ns
K4S563233F-HG600	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
K4S64323LH-HC600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
M393B5273DH0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1880 mA	536870912 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm	667 MHz	4 mm	Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY				.72 Amp		133.35 mm	.25 ns
K4N51163QE-ZC20	Samsung	CACHE DRAM MODULE	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		340 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			500 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.35 ns
K4B4G1646E-BCMA0	Samsung	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						13.3 mm
M393B4G70AH0-YF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm	400 MHz	4 mm	Not Qualified	309237645312 bit	1.2825 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX			260			133.35 mm	.4 ns
K4Y50164UE-JCA20	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	920 mA	33554432 words		YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	36 ns
K4S51163PF-YF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						11.5 mm	7 ns
K4S643233F-SN1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm	105 MHz	11 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	13 mm	7 ns
K4M281633F-BL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		155 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM		S-PBGA-B54	3			105 MHz		Not Qualified	134217728 bit					260	.0005 Amp	1,2,4,8		7 ns
M393B5773DH0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	800 MHz	4 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.738 Amp		133.35 mm	.225 ns
M393B1G73BH0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2315 mA	1073741824 words			COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	77309411328 bit					260	.45 Amp			.255 ns
K4T51043QI-HCE70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	124 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH			260	.008 Amp	4,8	9.5 mm	.4 ns
M393T2863QZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2070 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH			260	.135 Amp			.5 ns
K4S560432C-TE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		200 mA	67108864 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				133 MHz		Not Qualified	268435456 bit			e0			.002 Amp	1,2,4,8		5.4 ns
K4T1G044QE-HLE70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	9.5 mm	.4 ns
M391T6553CZ0-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		267 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH				.072 Amp			.5 ns
K4T51083QG-HCCC	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		175 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60				200 MHz		Not Qualified	536870912 bit						.0045 Amp	4,8		.6 ns
K4X51323PE-8EC6	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	536870912 bit						.0003 Amp	2,4,8,16		5.5 ns
K4S643233H-FE60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		145 mA	2097152 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	67108864 bit			e0			.0005 Amp	1,2,4,8		5.4 ns
K4T51163QE-ZLF70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.005 Amp	4,8	13 mm	.4 ns
M395T2953CZ4-CE61	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4000 mA	134217728 words			COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	9663676416 bit			e3
K4S561633F-XC75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		185 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.