OTHER DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M393T5663AZ3-CC	Samsung	CACHE DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3250 mA	268435456 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			200 MHz		Not Qualified	19327352832 bit			e3						.6 ns
M392B1K73DM0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1860 mA	1073741824 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm	533 MHz	4 mm	Not Qualified	77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				.87 Amp		133.35 mm	.3 ns
M393T6450FZA-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5210 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH				.724 Amp			.6 ns
K4M511633C-RN1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH		30	240			11.5 mm	7 ns
M470T2953BS3-CD5	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2760 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N200		1.9 V		267 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e0			.128 Amp			.5 ns
M471B1G73EB0-MA0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm
K4M561633G-BL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1 mm	111 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH				.001 Amp	1,2,4,8	11 mm	7 ns
K4B4G0846B-HYF8T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	536870912 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.3 ns
K4M28163LH-RG750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		2.7 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	8 mm	5.4 ns
M392B5670GB0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3024 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	800 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.81 Amp		133.35 mm	20 ns
K4M563233G-FN750	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		30	240	.001 Amp	1,2,4,8	13 mm	5.4 ns
K4M51323PC-SE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	111 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.0003 Amp	1,2,4,8	13 mm	7 ns
K4S643233F-DN75	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	135 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm	133 MHz	11 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	13 mm	5.4 ns
M393T1G60CJA-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		267 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.5 ns
M470T6464FBS-CE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	660 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm	333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			260	.04 Amp		67.6 mm	.45 ns
K4M51323LC-DL750	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1 mm	133 MHz	11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.001 Amp	1,2,4,8	13 mm	5.4 ns
K4M64163PK-RF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		50 mA	4194304 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54	1			133 MHz		Not Qualified	67108864 bit						.0003 Amp	1,2,4,8		6 ns
K4S56323LF-HC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
M378T5663QH3-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2120 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp			.45 ns
K4T1G164QQ-HCD60	Samsung	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						13 mm	.45 ns
K4M56323LE-EE80	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm	125 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	6 ns
K4M56323LE-MN80	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm	125 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	6 ns
K4S560432C-TE1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		190 mA	67108864 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				100 MHz		Not Qualified	268435456 bit			e0			.002 Amp	1,2,4,8		6 ns
K4S51323PF-MF750JR	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1.4 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S56323LF-HE750	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4M28323PH-HG90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		95 mA	4194304 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				111 MHz		Not Qualified	134217728 bit						.0003 Amp	1,2,4,8		7 ns
M392T2863CZA-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2520 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH				.135 Amp			.45 ns
K4M51163PC-BC900	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	2	1.95 V	1 mm	111 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.0003 Amp	1,2,4,8	11.5 mm	7 ns
K4X56163PI-FEC3T	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		95 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			133 MHz		Not Qualified	268435456 bit			e1		260	.00001 Amp	2,4,8,16		6 ns
K4T51043QC-ZCD5T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B63	3			267 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.5 ns
K4S563233F-FE1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	7 ns
K4M563233G-FL7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90	1			133 MHz		Not Qualified	268435456 bit						.001 Amp	1,2,4,8		5.4 ns
K4B2G0846Q-BYK00	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						11 mm
K4M64163LK-BF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		5.4 ns
M378B5173BH0-CK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	536870912 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	34359738368 bit						.12 Amp			.225 ns
K4T51043QE-ZCD50	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	266 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.008 Amp	4,8	11 mm	.5 ns
K4M56323LE-EE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	260			13 mm	7 ns
K4S64323LH-HE75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	2097152 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		6 ns
K4S64323LH-HN1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	2097152 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM		R-PBGA-B90				105 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
K4C89093AF-AIF50	Samsung	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		9	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX9	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V	1.2 mm		10.5 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					15.5 mm	.6 ns
M471B5273CH0-CK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	268435456 words		YES	COMMON	1.5	1.5	8	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	800 MHz	30 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH			260	.192 Amp		67.6 mm	.225 ns
K4M28163LF-RS1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		2.7 V	1 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0					8 mm	7 ns
K4S56163LF-ZE1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						11 mm	7 ns
K4M56163LG-RN1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	16777216 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	268435456 bit						.001 Amp	1,2,4,8		7 ns
K4M51323PI-HG600	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	2	1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
K4T51163QC-ZCD60	Samsung	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	.45 ns
K4S643233H-HF1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	2097152 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM		R-PBGA-B90				105 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
M393T6553BG0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3020 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e0	NOT SPECIFIED	NOT SPECIFIED	.522 Amp			.6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.