Infineon Technologies DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYS72D16500HR-7-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
HYS64V64220GBDL-8-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH							6 ns
HYB39M83200Q-166	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		195 mA	262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			166 MHz		Not Qualified	8388608 bit			e0			.001 Amp
HYS64D32000GU-8-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		125 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.8 ns
HYB39S64160BT-7	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	145 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5 ns
HYB511000AJ-10	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0						100 ns
HYB3164800AT-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	50 ns
HYS72D128520GR-8-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		125 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.8 ns
HYS72V32301GR-7-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4860 mA	33554432 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.036 Amp			5.4 ns
HYB39S64160ETL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	4194304 words	1,2,4,8	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
HYB39S64402AT-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX4	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH						22.22 mm	6 ns
HYS64V64220GBDL-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	67108864 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	4294967296 bit						.016 Amp			6 ns
HYS72D32500GR-8-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2025 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		125 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.135 Amp			.8 ns
HYS64V2000GDL10	Infineon Technologies
HYS64D16000GU-7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2240 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.04 Amp			.75 ns
HYS72D128321HBR-7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3270 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N184	2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e3			.57 Amp			.75 ns
HYS72T64001HR-3-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				55 Cel		64MX72	64M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e3						.45 ns
HYM322005S-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	20.32 mm			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.004 Amp			60 ns
HYS64V1620GCD-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	1073741824 bit						.016 Amp			6 ns
HYB18TC512160AF-3S	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
HYB39S64800AT-8B	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		6 ns
HYS64V32220GU-8-C	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH							6 ns
HYB18T1G800AFL-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB314400BJL-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	3.6 V	3.75 mm		7.75 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		17.27 mm	60 ns
HYS64D16001GU-7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns
HYB39S256160DEL-6	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5 ns
HYS72D32000GU-7.5-X	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
HYM328025S-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.016 Amp			60 ns
HYB3164405ATL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	115 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0001 Amp		20.95 mm	60 ns
HYB3117405BT-50	Infineon Technologies	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.14 mm	50 ns
HYS72D128320HU-5-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3710 mA	134217728 words		YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N184	2.7 V		200 MHz		Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH	e3						.5 ns
HYB3117805BSJL-70	Infineon Technologies	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	16777216 bit			e0			.0002 Amp			70 ns
HYS64D16020GDL-8-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1220 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	2.7 V		125 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.036 Amp			.8 ns
HYB3164160T-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.56,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54					Not Qualified	67108864 bit			e0			.0002 Amp			60 ns
HYS64V1000GU-10	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		580 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL		R-PDMA-N168			100 MHz		Not Qualified	67108864 bit						.008 Amp			8 ns
HYM22100S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	170 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm			Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			80 ns
HYM64V4005GU-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1920 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH				.016 Amp			50 ns
HYS72T256040HR-3.7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				55 Cel		256MX72	256M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e3
HYB3165800T-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V	1.2 mm		12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		22.25 mm	60 ns
HYS64T32000KM-3.7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	214	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM214,16	DRAMs	.4 mm	65 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N214	1.9 V		266 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH				.016 Amp			.5 ns
HYB39S16400T-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS	145 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	18.41 mm	8 ns
HYS64T64000HU-5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	65 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e3			.032 Amp			.6 ns
HYM72V4015GS-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH				.03 Amp			60 ns
HYB39S256160DE-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
HYM64V2005GCL-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH							50 ns
HYS64T64000GU-5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N240	1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp			.6 ns
HYS72T256020HU-5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	65 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-PDMA-N240	1.9 V		200 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH				.09 Amp			.6 ns
HYS72T256022HR-3.7-A	Infineon Technologies	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY						256MX72	256M			DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.