Infineon Technologies DRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

HYS72V16201GR-8-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1890 mA

16777216 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

1207959552 bit

3 V

AUTO/SELF REFRESH

.0135 Amp

6 ns

HYM328020GD-50

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

330 mA

8388608 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

ZIG-ZAG

1

R-XZMA-N72

3.6 V

25.4 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/SELF REFRESH

.0036 Amp

50 ns

HYS72V64300GR-7.5-C

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

UNSPECIFIED

SYNCHRONOUS

67108864 words

YES

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

64MX72

64M

0 Cel

DUAL

1

R-XDMA-X168

3.6 V

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

5.4 ns

HYS64D32000GU-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1800 mA

33554432 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

2147483648 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

HYM361020S-10

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

920 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

37748736 bit

.012 Amp

100 ns

HYS72D16500GR-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2520 mA

16777216 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

1207959552 bit

2.3 V

AUTO/SELF REFRESH

.045 Amp

.75 ns

HYM64V4005GU-70

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1600 mA

4194304 words

NO

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.016 Amp

70 ns

HYB39S256800CE-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

33554432 words

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

32MX8

32M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

5.4 ns

HYB18RL28809AC-2.5

Infineon Technologies

DDR1 DRAM

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

9

GRID ARRAY, THIN PROFILE

1 mm

32MX9

32M

BOTTOM

1

R-PBGA-B144

1.9 V

1.2 mm

11 mm

Not Qualified

301989888 bit

1.7 V

AUTO REFRESH

18.5 mm

HYB5117400AJ-80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

80 ns

HYS64D16001HDL-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

2.5

64

MICROELECTRONIC ASSEMBLY

70 Cel

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

Not Qualified

1073741824 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.7 ns

HYB39M83200L-133

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

CMOS

J BEND

262144 words

COMMON

3.3

3.3

32

CHIP CARRIER

LDCC68,1.0SQ

DRAMs

1.27 mm

70 Cel

3-STATE

256KX32

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

S-PQCC-J68

133 MHz

Not Qualified

8388608 bit

e0

HYS72T128020GR-3-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

55 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.45 ns

HYS72V32300GR-7.5

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2430 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

2415919104 bit

.018 Amp

5.4 ns

HYS72T64000HR-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

65 Cel

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

4831838208 bit

1.7 V

AUTO/SELF REFRESH

.6 ns

HYS72D128020GR-8-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4590 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 ns

HYB39S64160BTL-8

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

130 mA

4194304 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

125 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

22.22 mm

6 ns

HYB39S128800CT-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

230 mA

16777216 words

1,2,4,8

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX8

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

e0

.0015 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS72D128320HBR-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.7 ns

HYB3166165BTL-60

Infineon Technologies

EDO DRAM

COMMERCIAL

50

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

155 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0002 Amp

20.95 mm

60 ns

HYS72T128020HU-3S-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

65 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

.45 ns

HYM72V4000GS-50

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1800 mA

4194304 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

36

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.03 Amp

50 ns

HYS64V8300GU-7.5-C

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

8388608 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

5.4 ns

HYS64T64020HDL-3.7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

900 mA

67108864 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

55 Cel

3-STATE

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N200

1.9 V

267 MHz

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

e3

.03 Amp

.5 ns

HYM32V8045GD-60

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

230 mA

8388608 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

DUAL

R-PDMA-N72

Not Qualified

268435456 bit

.0000036 Amp

60 ns

HYS64V2000GU-12

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1000 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N168

83 MHz

Not Qualified

134217728 bit

.016 Amp

10 ns

HYB18T256160AFL-3S

Infineon Technologies

DDR2 DRAM

84

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

160 mA

16777216 words

4,8

YES

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

3-STATE

16MX16

16M

BOTTOM

1

R-PBGA-B84

1.9 V

333 MHz

10 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

4,8

12.5 mm

.45 ns

HYB18T1G800AC-3.7

Infineon Technologies

DDR2 DRAM

68

FBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

YES

1.8

8

GRID ARRAY, FINE PITCH

.8 mm

128MX8

128M

BOTTOM

1

R-PBGA-B68

1.9 V

10 mm

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

20 mm

.5 ns

HYB39S64800AT-8

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

130 mA

8388608 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

125 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

22.22 mm

6 ns

HYS72V32220GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

170 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

2415919104 bit

.0015 Amp

6 ns

HYS64V16200GDL-7.5

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

960 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N144

133 MHz

Not Qualified

1073741824 bit

.008 Amp

5.4 ns

HYB39V644402TL-15

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

900 mA

16777216 words

1,2,4,8,16

YES

COMMON

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

66 MHz

10.16 mm

67108864 bit

3 V

AUTO/SELF REFRESH; LG-MAX

.0005 Amp

1,2,4,8,16

22.62 mm

12 ns

HYM642005GS-60

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

930 mA

2097152 words

NO

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

GOLD

DUAL

1

R-XDMA-N168

5.5 V

25.4 mm

5.3 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM

e4

.03 Amp

133.35 mm

35 ns

HYB39S64160ET-6

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

150 mA

4194304 words

1,2,4,8

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

166 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

22.22 mm

5 ns

HYB18T512160AF-3.7

Infineon Technologies

DDR2 DRAM

OTHER

84

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

4,8

YES

COMMON

1.8

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX16

32M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B84

1.9 V

1.2 mm

267 MHz

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e1

.004 Amp

4,8

12.5 mm

.5 ns

HYB39S128400DE-6

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

33554432 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

32MX4

32M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

5 ns

HYB18T512160AC-3

Infineon Technologies

DDR2 DRAM

OTHER

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

1.8

16

GRID ARRAY, FINE PITCH

.8 mm

95 Cel

32MX16

32M

0 Cel

BOTTOM

1

R-PBGA-B84

1.9 V

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

12.5 mm

.45 ns

HYB39S256800E-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

33554432 words

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

32MX8

32M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

5.4 ns

HYS64T128021HDL-5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1072 mA

134217728 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

55 Cel

3-STATE

128MX64

128M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N200

1.9 V

200 MHz

Not Qualified

8589934592 bit

1.7 V

AUTO/SELF REFRESH

e3

.064 Amp

.6 ns

HYS72T256220GR-5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2780 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

55 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

200 MHz

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

.512 Amp

.6 ns

HYB3164405J-50

Infineon Technologies

EDO DRAM

COMMERCIAL

34

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

YES

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

16MX4

16M

0 Cel

DUAL

1

R-PDSO-J34

3.6 V

3.76 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

22.25 mm

50 ns

HYS64T64000HU-3.7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

65 Cel

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

.5 ns

HYR183240G-840

Infineon Technologies

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

UNSPECIFIED

BLOCK ORIENTED PROTOCOL

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

COMMON

2.5

1.8/2.5,2.5

18

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

32MX18

32M

DUAL

1

R-XDMA-N184

2.63 V

800 MHz

Not Qualified

603979776 bit

2.37 V

SELF CONTAINED REFRESH

40 ns

HYR1825640G-745

Infineon Technologies

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

UNSPECIFIED

BLOCK ORIENTED PROTOCOL

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

COMMON

2.5

1.8/2.5,2.5

18

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

256MX18

256M

DUAL

1

R-XDMA-N184

2.63 V

711 MHz

Not Qualified

4831838208 bit

2.37 V

SELF CONTAINED REFRESH

45 ns

HYS64V16220GDL-8-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

6 ns

HYB514100J-10

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

HYB511000A-80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

1048576 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

DRAMs

2.54 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

1048576 bit

e0

80 ns

HYS72D32001GR-8-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4860 mA

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.081 Amp

.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.