Infineon Technologies - HYB18T256160AFL-3S

  1. Home
  2. Infineon Technologies - HYB18T256160AFL-3S
HYB18T256160AFL-3S by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number HYB18T256160AFL-3S
Description DDR2 DRAM; No. of Terminals: 84; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet HYB18T256160AFL-3S Datasheet
In Stock379
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .004 Amp
Organization: 16MX16
Output Characteristics: 3-STATE
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 160 mA
No. of Terminals: 84
Maximum Clock Frequency (fCLK): 333 MHz
No. of Words: 16777216 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B84
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: FBGA
Width: 10 mm
Input/Output Type: COMMON
No. of Ports: 1
Memory Density: 268435456 bit
Self Refresh: YES
Sequential Burst Length: 4,8
Memory IC Type: DDR2 DRAM
Memory Width: 16
No. of Functions: 1
Qualification: Not Qualified
Package Equivalence Code: BGA84,9X15,32
Refresh Cycles: 8192
Interleaved Burst Length: 4,8
Length: 12.5 mm
Maximum Access Time: .45 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): NOT SPECIFIED
Terminal Pitch: .8 mm
Maximum Supply Voltage (Vsup): 1.9 V
Power Supplies (V): 1.8
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
379 - -

Popular Products

Category Top Products

MT41K512M8DA-107AIT:P by Micron Technology

MT41K512M8DA-107AIT:P

Micron Technology

Micron Technology's MT41K512M8DA-107AIT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With AEC-Q100 screening level, it offers synchronous operation and self-refresh capability.
MT48LC8M16A2P-75IT:GTR by Micron Technology

MT48LC8M16A2P-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 85°C max temp. It features self-refresh, operates in industrial grade, and has 8388608 words memory capacity. Ideal for applications requiring fast access time and high memory density.
IS42SM16200D-6BLI by Integrated Silicon Solution

IS42SM16200D-6BLI

Integrated Silicon Solution

IS42SM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 3.3V, has dual bank page burst access mode, and offers a max access time of 5.5 ns. Ideal for industrial applications requiring high-speed and reliable memory performance in a compact grid array package.
MT46H32M16LFBF-6AIT:C by Micron Technology

MT46H32M16LFBF-6AIT:C

Micron Technology

MT46H32M16LFBF-6AIT:C by Micron Technology is a 32MX16 DDR1 DRAM with a memory density of 536870912 bit. It operates at a max clock frequency of 166 MHz and has an operating temperature range of -40 to 85 °C. It is commonly used in industrial applications requiring high-speed synchronous memory.
MT41K512M16VRN-107AIT:PTR by Micron Technology

MT41K512M16VRN-107AIT:PTR

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.
MT46H32M16LFBF-6IT:C by Micron Technology

MT46H32M16LFBF-6IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.
IS42S16400J-7TLI-TR by Integrated Silicon Solution

IS42S16400J-7TLI-TR

Integrated Silicon Solution

IS42S16400J-7TLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a small outline package suitable for industrial applications requiring fast access times and common I/O type.
AS4C256M16D3C-12BINTR by Alliance Memory

AS4C256M16D3C-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3C-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
M464S3254CTS-L7A by Samsung

M464S3254CTS-L7A

Samsung

Samsung M464S3254CTS-L7A is a 32MX64 DRAM module with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers 70°C max temp, DUAL BANK PAGE BURST access mode, and 8192 refresh cycles for efficient memory performance.
S27KL0642DPBHI030 by Cypress Semiconductor

S27KL0642DPBHI030

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Supply Voltage (Vsup): 3.6 V;
MT40A2G8AG-062EAUT:F by Micron Technology

MT40A2G8AG-062EAUT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAUT:F is a DDR4 DRAM with 2GX8 organization, operating at a max clock frequency of 1600 MHz. It has a memory density of 17.18 Gb and is suitable for applications requiring high-speed synchronous memory.
S70KS1282GABHV020 by Infineon Technologies

S70KS1282GABHV020

Infineon Technologies

Infineon's S70KS1282GABHV020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 105°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its low profile grid array package and common I/O type.
K4H641638Q-LCCC by Samsung

K4H641638Q-LCCC

Samsung

Samsung's K4H641638Q-LCCC DRAM features 4MX16 organization, 400 MHz clock frequency, and 67108864 bit memory density. Ideal for cache applications with a max operating temperature of 70°C.
MT40A1G16RC-062EIT:BTR by Micron Technology

MT40A1G16RC-062EIT:BTR

Micron Technology

DDR4 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; JESD-609 Code: e1;
IS42S32800J-6TL by Integrated Silicon Solution

IS42S32800J-6TL

Integrated Silicon Solution

IS42S32800J-6TL by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 86 terminals, and supports four bank page burst access mode. Ideal for applications requiring high-speed memory performance in commercial temperature environments.
IS43QR16256B-083RBL by Integrated Silicon Solution

IS43QR16256B-083RBL

Integrated Silicon Solution

IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
NT5AD512M16A4-GZ by Nanya Technology

NT5AD512M16A4-GZ

Nanya Technology

NT5AD512M16A4-GZ by Nanya Technology is a DDR4 DRAM with 512MX16 organization, operating at 1200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a thin profile and fine pitch package style.
MT53E256M32D2DS-046AUT:B by Micron Technology

MT53E256M32D2DS-046AUT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
K4T1G164QF-BCE7 by Samsung

K4T1G164QF-BCE7

Samsung

Samsung's K4T1G164QF-BCE7 DDR2 DRAM features 64MX16 organization, 400 MHz clock frequency, and 1073741824 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.
NT5CC256M16EP-EKT by Nanya Technology

NT5CC256M16EP-EKT

Nanya Technology

NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.