Infineon Technologies DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYM32200L-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	280 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	17.5006 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.003 Amp			70 ns
HYB314171BJL-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	125 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm		10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		26.16 mm	50 ns
HYS72T64000HFN-3.7-A	Infineon Technologies	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY						64MX72	64M			DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH
HYS64V16220GCDL-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1024 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	1073741824 bit						.008 Amp			5.4 ns
HYB18T256400AF-3.7	Infineon Technologies	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	135 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	266 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.004 Amp	4,8	10.5 mm	.5 ns
HYM328000GD-50	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	580 mA	8388608 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N72	3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH				.0036 Amp			50 ns
HYB39S128800DE-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX8	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
HYB3117805BSJL-50	Infineon Technologies	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	16777216 bit			e0			.0002 Amp			50 ns
HYB39S256802T-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			33554432 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	268435456 bit			e0			.001 Amp	1,2,4,8		5 ns
HYB3116400BT-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.14 mm	50 ns
HYB5116400ASJ-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0			.001 Amp			50 ns
HYM324025S-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	4194304 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	22.86 mm			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			60 ns
HYB18L256160BC-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54	1.95 V		133 MHz	8 mm	Not Qualified	268435456 bit	1.65 V	AUTO/SELF REFRESH	e0			.00035 Amp	1,2,4,8	12 mm	5.4 ns
HYB4116-C3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	16384 bit			e0						200 ns
HYB18T1G160AC-5	Infineon Technologies	DDR2 DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm			64MX16	64M			BOTTOM	1	R-PBGA-B92	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYM64V8005GCD-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH							60 ns
HYB39L128160AC-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54	3.6 V	1.2 mm	133 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.0004 Amp	1,2,4,8	9 mm	5.4 ns
HYS64V8220GCDL-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		520 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	536870912 bit						.004 Amp			6 ns
HYM364025GS-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1240 mA	4194304 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			50 ns
HYM64V4005GCDL-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH							60 ns
HYS72D64320GBR-7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3108 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns
HYB3165805AJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		21.08 mm	50 ns
HYS72V8200GU-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	140 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	603979776 bit	3 V					.001 Amp			5.4 ns
HYS64V4200GDL-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		560 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	268435456 bit						.004 Amp			5.4 ns
HYS72D128520GR-8-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4590 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		125 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.8 ns
HYS64D128021HBDL-5-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2860 mA	134217728 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL	1	R-PDMA-N200	2.7 V		200 MHz		Not Qualified	8589934592 bit	2.5 V	AUTO/SELF REFRESH	e3			.06 Amp			.5 ns
HYM94500L-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	900 mA	4194304 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX9	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.32 mm			Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.009 Amp			70 ns
HYS72D32000GR-8-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.8 ns
HYB39S256400FTL-7	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		64MX4	64M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
HYB39M83200Q-120	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			125 MHz		Not Qualified	8388608 bit			e0
HYS64V16220GCDL-8-B	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH							6 ns
HYS72D1280320GU-6-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4320 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		166 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.7 ns
HYB39S64400ETL-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	130 mA	16777216 words	1,2,4,8	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
HYB39S64160BTL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
HYS72D128320HBR-7-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4880 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N184	2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e3						.75 ns
HYB39S256800DEL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		32MX8	32M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
HYR163240G-745	Infineon Technologies	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M			DUAL	1	R-XDMA-N184	2.63 V		711 MHz		Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH							45 ns
HYB5116400ASJ-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		70 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0			.001 Amp			80 ns
HYS64D128020GU-8-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3200 mA	134217728 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		125 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.192 Amp			.8 ns
HYB3164805AJ-40	Infineon Technologies	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		21.08 mm	40 ns
HYB3165400ATL-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		20.95 mm	50 ns
HYB18T256161AF-25	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	2.1 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						12.5 mm	.55 ns
HYM64V1645GU-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2240 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	1073741824 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH				.016 Amp			50 ns
HYR1812840G-745	Infineon Technologies	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V		711 MHz		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
HYS72D128520HR-7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns
HYB5116400BJ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.001 Amp		17.27 mm	70 ns
HYS72D64020GU-7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2520 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
HYB18T512800AC-3S	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V			10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						10.5 mm	.45 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.