Infineon Technologies DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYS64V8200GDL-7	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144		31.75 mm	133 MHz		Not Qualified	536870912 bit						.004 Amp			5.4 ns
HYS64V32220GDL-7-D	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH							5.4 ns
HYM64V4005GCL-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH							50 ns
HYB39S512400AEL-6	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		128MX4	128M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5 ns
HYB41257-P15	Infineon Technologies	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0						150 ns
HYS72V32600GR-7.5-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH							5.4 ns
HYM72V1600GS-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	38.1 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH				.05 Amp			60 ns
HYS72T128300HP-3.7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				55 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH							.5 ns
HYB18T256160AC-5	Infineon Technologies	DDR2 DRAM	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V			10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.5 mm	.6 ns
HYS64D64320GU-5-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2790 mA	67108864 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		200 MHz		Not Qualified	4294967296 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.6 ns
HYS64D64020HDL-5-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2.7 V				Not Qualified	4294967296 bit	2.5 V	AUTO/SELF REFRESH							.5 ns
HYM32200S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	280 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.003 Amp			70 ns
HYM324025GS-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	4194304 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	22.86 mm			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			60 ns
HYB5116165BSJ-70	Infineon Technologies	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0			.001 Amp			70 ns
HYB3116160BST-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.001 Amp			60 ns
HYS64V32220GD-8-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	680 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
HYS72D64000HU-7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns
HYS64V32220GU-7.5-C	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH							5.4 ns
HYB39S128160CEL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
HYB39S16800T-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS	145 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	18.41 mm	8 ns
HYS64V32220GCDL-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	2147483648 bit						.008 Amp			6 ns
HYB18T256160AFL-5	Infineon Technologies	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V		200 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.6 ns
HYB39S512160ATL-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0			.003 Amp	1,2,4,8	22.22 mm	6 ns
HYB511000A-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		YES	SEPARATE	5	5	1	SMALL OUTLINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J20	5.5 V				Not Qualified	1048576 bit	4.5 V	AUTO/SELF REFRESH	e0						70 ns
HYM72V2005GS-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	2097152 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	2MX72	2M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm			Not Qualified	150994944 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH				.03 Amp			60 ns
HYB39S16320TQ-7	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20 mm	5.5 ns
HYS72T64001GR-5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				55 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.6 ns
HYS64V32300GU-8B	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		210 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N168			100 MHz		Not Qualified	2147483648 bit						.002 Amp			6 ns
HYB39S256400DEL-7	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		64MX4	64M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
HYB3165405AJ-40	Infineon Technologies	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		21.08 mm	40 ns
HYB39S128800DT-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX8	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	6 ns
HYS64V1000GU-70	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words				3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		1MX64	1M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	67108864 bit	3 V
HYS72T128020HP-3.7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				55 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH							.5 ns
HYS64V4300GU-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	130 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.001 Amp			6 ns
HYS64D64020HDL-6-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.7 ns
HYS72D128320HU-6-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2180 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		166 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH							.7 ns
HYS64T128021HDL-2.5-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				65 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH							.4 ns
HYS72D256320HBR-5-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		2.6		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	19327352832 bit	2.5 V	AUTO/SELF REFRESH							.5 ns
HYM322005GS-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	20.32 mm			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.004 Amp			60 ns
HYS72V16220GU-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	110 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	1207959552 bit	3 V					.001 Amp			6 ns
HYB39S16802AT-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44			100 MHz		Not Qualified	16777216 bit			e0			.002 Amp	1,2,4,8		8 ns
HYB314100BJL-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	3.6 V	3.75 mm		7.75 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		17.27 mm	50 ns
HYS64V1620GCD-10	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.016 Amp			8 ns
HYB39S16160AT-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50			100 MHz		Not Qualified	16777216 bit			e0			.002 Amp	1,2,4,8		8 ns
HYB514175BJL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.88 mm		10.3 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		26.16 mm	60 ns
HYB39S64402AT-8L	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE				70 Cel		16MX4	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V				Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH							6 ns
HYS72D64320HBR-6-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.7 ns
HYM91000S-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.009 Amp			60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.