Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT47H32M16NF-25EAAT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	215 mA	33554432 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32			.8 mm	105 Cel	3-STATE	32MX16	32M		-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	12.5 mm
MT53D1024M32D4DT-053WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25			.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.95 mm	1869.1 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
EDB4432BBBJ-1D-F-R	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			128MX32	128M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					11.5 mm
EDB4432BBBJ-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			128MX32	128M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134		1.95 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
MT40A1G8SA-062EIT:R	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A512M16JY-083EAAT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	254 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm	105 Cel	3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	8	14 mm
MT41K256M8DA-125IT:KTR	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			256MX8	256M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			10.5 mm
MT48LC8M16A2P-75:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	310 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
EDB4432BBBJ-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm	125 Cel		128MX32	128M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134		1.95 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
MT47H64M16HR-3IT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.007 Amp	4,8	12.5 mm	.45 ns
MT47H64M16HR-3L:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.45 ns
MT48LC32M16A2P-75	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	255 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0035 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC8M16A2P-75IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	310 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT53E256M32D2DS-046WT:B	Micron Technology	LPDDR4 DRAM
MTA18ASF2G72PDZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1333 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
EDB4432BBBJ-1DAIT-F	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm	85 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB4432BBBJ-1DAUT-F-R	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm	125 Cel		128MX32	128M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134		1.95 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
MT41J128M16HA-15E:DTR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J128M16JT-125	Micron Technology	DDR3 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm			128MX16	128M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	800 MHz	8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260		8	14 mm
MT41J128M16JT-125AAT:K	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT48LC8M16A2P-6A	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	330 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT8HTF12864HDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1430 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.056 Amp		67.6 mm	.4 ns
EDB4432BBBJ-1D-F	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			128MX32	128M				BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
MT40A1G8SA-062E:ETR	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A256M16GE-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	69 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.057 Amp	8	14 mm
MT46H16M32LFB5-5IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	115 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT48LC8M16A2P-6A:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	330 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M		0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT53E1G16D1FW-046AIT:A	Micron Technology	LPDDR4 DRAM
MT53E1G32D2FW-046AUT:A	Micron Technology	LPDDR4 DRAM
MT41K128M16JT-125IT	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		30	260			14 mm
MT46H64M32LFBQ-48IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX32	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	208 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	13 mm	4.8 ns
MT47H32M16HR-25EIT:GTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M16HR-25EIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	440 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.4 ns
MT48LC16M16A2P-7EIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC4M32B2F5-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX32	4M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					13 mm	5.5 ns
MT36KSF2G72PZ-1G6E1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY		8		1 mm	95 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		154618822656 bit	1.283 V	SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MT46H32M16LFBF-5AIT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	115 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32		DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns
MT46V16M16P-5B:MTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		16MX16	16M		0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm		10.16 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT47H64M16HR-3:HTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX16	64M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.45 ns
MT48H16M32LFB5-6IT:C	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	16777216 words	1,2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	13 mm	5 ns
MT48LC16M16A2P-7E:D	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	135 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC16M16A2TG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	270 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M		-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT53E128M32D2DS-046AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.65 mm	105 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E128M32D2DS-046WT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	85 Cel		128MX32	128M		-25 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E2G32D4NQ-046WT:A	Micron Technology	LPDDR4 DRAM					RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		NO				32						85 Cel		2GX32	2G		-25 Cel		BOTTOM	1	R-PBGA-B							68719476736 bit
MTA16ATF2G64HZ-2G6E1	Micron Technology	DDR DRAM MODULE	OTHER	260			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ASF2G72PDZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1466 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MT40A2G16SKL-062E:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	392 mA	2147483648 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm	95 Cel		2GX16	2G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	10.5 mm		34359738368 bit	1.14 V		e1	30	260	.086 Amp		13 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.