Renesas Electronics DRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

UPD411000LA-15

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

MOS

J BEND

80 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

150 ns

UPD4217800LG5-A70-7JD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

e0

.0005 Amp

70 ns

UPD42S17160G5M50

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

UPD42S16405G3-70

Renesas Electronics

EDO DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00025 Amp

70 ns

MC-42256AB8FA-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

256

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

120 mA

262144 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

SINGLE

R-PSMA-N30

16.7894 mm

Not Qualified

2097152 bit

.002 Amp

100 ns

MC-424100A9A-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

1024

PLASTIC/EPOXY

NO

CMOS

720 mA

4194304 words

COMMON

5

5

9

SIP30

DRAMs

70 Cel

3-STATE

4MX9

4M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

26.289 mm

Not Qualified

37748736 bit

e0

.009 Amp

60 ns

UPD4565161G5-A80-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

6 ns

MC-424LFC721F-A70

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1440 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

R-PDMA-N168

25.4 mm

Not Qualified

301989888 bit

.009 Amp

70 ns

UPD42S17170LE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.0004 Amp

80 ns

UPD4216805LLE-A70

Renesas Electronics

EDO DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.0005 Amp

70 ns

UPD42S16400LG5-A80-7KD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00015 Amp

80 ns

UPD42S4800LLE-A10

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

524288 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.0001 Amp

100 ns

MC-4516CA726EF-A80

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1980 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

R-PDMA-N168

125 MHz

Not Qualified

1207959552 bit

.0045 Amp

6 ns

UPD42S18160LG5A80-7JF

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

80 ns

MC-428LFH641FB-A50

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1080 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N168

Not Qualified

536870912 bit

.004 Amp

50 ns

UPD42S4260AG5-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

MC-4516CB647EF-A75

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1840 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

1073741824 bit

.004 Amp

5.4 ns

UPD42S17160G5-50

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

50 ns

UPD42S4800LG5M-A80

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

80 ns

MC-42512A32F-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

700 mA

524288 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX32

512K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

16777216 bit

.016 Amp

70 ns

UPD4216100G5-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

UPD424412GS-60

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

UPD424263LLE-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

UPD42S17180LG5-A80-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

YES

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0001 Amp

80 ns

UPD4565162G5-A80B-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

185 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD424190AG5M-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

262144 words

NO

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.0003 Amp

60 ns

UPD42S16800LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.00015 Amp

60 ns

MC-42256A36F-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

840 mA

262144 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

9437184 bit

.012 Amp

80 ns

UPD42S4280LG5-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

262144 words

YES

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.0001 Amp

80 ns

UPD424102LA-70

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

SRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD4565821G5-A70A-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD424102V-10

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

4194304 words

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

SRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

MC-428000A36BJ-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1260 mA

8388608 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

301989888 bit

.024 Amp

70 ns

UPD42S17400LG3M-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

YES

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00015 Amp

60 ns

UPD42S4400LA-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.00015 Amp

60 ns

UPD414D-2

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

16

DIP

64

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

SEPARATE

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

4096 bit

e0

200 ns

MC-428000A32FH-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

860 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

268435456 bit

.016 Amp

70 ns

UPD42S16400G3-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00025 Amp

50 ns

UPD42S4260V-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

145 mA

262144 words

YES

COMMON

5

5

16

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD42S4260LG5-15L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

45 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.00012 Amp

150 ns

UPD4218160G5-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

UPD4217900LLE-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

2097152 words

NO

COMMON

3.3

3.3

9

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX9

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

18874368 bit

e0

.0004 Amp

70 ns

UPD424263AG5-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD42S18170G5-50-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

170 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0004 Amp

50 ns

UPD42S17160LG5-A80-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0001 Amp

80 ns

UPD42S17100LV-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

ZIP

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

90 mA

16777216 words

YES

SEPARATE

3.3

3.3

1

IN-LINE

ZIP24,.1

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T24

Not Qualified

16777216 bit

e0

.0001 Amp

70 ns

MC-424512A36FH-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

910 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

18874368 bit

.024 Amp

80 ns

HM5283206FP-10

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

100

QFP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

240 mA

262144 words

1,2,4,8,FP

COMMON

3.3

3.3

32

FLATPACK

QFP100,.7X.9

DRAMs

.635 mm

70 Cel

3-STATE

256KX32

256K

0 Cel

QUAD

R-PQFP-G100

100 MHz

Not Qualified

8388608 bit

.003 Amp

1,2,4,8

10 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.