Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
SYNCHRONOUS DRAM |
OTHER |
144 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
MULTI BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
371 mA |
33554432 words |
2,4,8 |
NO |
COMMON |
1.8 |
18 |
GRID ARRAY, THIN PROFILE |
BGA144,12X18,40/32 |
1 mm |
95 Cel |
32MX18 |
32M |
0 Cel |
TIN BISMUTH |
BOTTOM |
1 |
R-PBGA-B144 |
1.9 V |
1.2 mm |
400 MHz |
11 mm |
603979776 bit |
1.7 V |
AUTO REFRESH, TERM PITCH-MAX |
e6 |
.215 Amp |
2,4,8 |
18.5 mm |
||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
32 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
130 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE |
SOJ32,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX9 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
50 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
90 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
4194304 bit |
e0 |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
18874368 bit |
e0 |
.0001 Amp |
60 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
80 ns |
||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
28 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
e0 |
.0005 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
800 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
33.02 mm |
83 MHz |
Not Qualified |
536870912 bit |
.016 Amp |
9 ns |
||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
32 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
16777216 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
50 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
16777216 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
142.8 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5 ns |
|||||||||||||||||||||||
Renesas Electronics |
STATIC COLUMN DRAM |
COMMERCIAL |
24 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
4194304 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/28,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
e0 |
80 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1200 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.4 mm |
Not Qualified |
150994944 bit |
.012 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
90 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24/28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
16777216 bit |
e0 |
.001 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
80 mA |
16777216 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24/28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX1 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
16777216 bit |
e0 |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
32 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
110 mA |
16777216 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
80 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
4194304 bit |
e0 |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
145 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
143 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8,16 |
5.4 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1280 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
125 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
128 |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
16384 words |
SEPARATE |
+-5,12 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX1 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
16384 bit |
e0 |
200 ns |
|||||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
5 |
70 Cel |
0 Cel |
5.5 V |
4.5 V |
80 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
50 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
1048576 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G50 |
100 MHz |
Not Qualified |
18874368 bit |
e0 |
.002 Amp |
4,8 |
8 ns |
|||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
100 mA |
524288 words |
YES |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1264 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
29.21 mm |
100 MHz |
Not Qualified |
268435456 bit |
.032 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
NIBBLE MODE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
120 mA |
4194304 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
4194304 bit |
e0 |
.001 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
5 |
70 Cel |
0 Cel |
5.5 V |
4.5 V |
80 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0005 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
825 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
301989888 bit |
.0025 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM |
COMMERCIAL |
72 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
480 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, SHRINK PITCH |
SSOP72,.5 |
DRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G72 |
250 MHz |
Not Qualified |
8388608 bit |
e0 |
.0002 Amp |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
110 mA |
16777216 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX1 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
16777216 bit |
e0 |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
80 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
DDR1 DRAM |
144 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
MULTI BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
872 mA |
67108864 words |
2,4,8 |
COMMON |
1.8 |
1.5/1.8,1.8,2.5 |
9 |
GRID ARRAY, THIN PROFILE |
BGA144,12X18,40/32 |
DRAMs |
1 mm |
3-STATE |
64MX9 |
64M |
BOTTOM |
1 |
R-PBGA-B144 |
1.9 V |
1.17 mm |
400 MHz |
11 mm |
Not Qualified |
603979776 bit |
1.7 V |
AUTO REFRESH |
.055 Amp |
18.5 mm |
.3 ns |
|||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
18874368 bit |
e0 |
.0001 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
32MX16 |
32M |
DUAL |
R-PDMA-N184 |
600 MHz |
Not Qualified |
536870912 bit |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
100 mA |
1048576 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
120 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
16777216 bit |
e0 |
.00015 Amp |
50 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
262144 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
e0 |
.0001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1035 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
Not Qualified |
603979776 bit |
.0045 Amp |
60 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
PAGE MODE DRAM |
COMMERCIAL |
18 |
DIP |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
85 mA |
65536 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP18,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T18 |
Not Qualified |
262144 bit |
e0 |
80 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP20/26,.36 |
DRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G20 |
Not Qualified |
4194304 bit |
e0 |
.001 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
NIBBLE MODE DRAM |
COMMERCIAL |
24 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
16777216 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/28,.46 |
DRAMs |
1.27 mm |
70 Cel |
YES |
3-STATE |
16MX1 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
e0 |
80 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
660 mA |
1048576 words |
COMMON |
5 |
5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
67108864 bit |
.064 Amp |
70 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1980 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
1207959552 bit |
.009 Amp |
60 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
100 mA |
262144 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE |
ZIP40,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.0005 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
1024 |
PLASTIC/EPOXY |
NO |
CMOS |
200 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
SIP30,.2 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
SINGLE |
17.78 mm |
Not Qualified |
8388608 bit |
e0 |
.002 Amp |
70 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
DDR DRAM |
OTHER |
144 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
MULTI BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
1078 mA |
33554432 words |
2,4,8 |
SEPARATE |
1.8 |
1.5/1.8,1.8,2.5 |
18 |
GRID ARRAY, THIN PROFILE |
BGA144,12X18,40/32 |
DRAMs |
1 mm |
85 Cel |
3-STATE |
32MX18 |
32M |
0 Cel |
BOTTOM |
1 |
R-PBGA-B144 |
1.9 V |
1.17 mm |
533 MHz |
11 mm |
Not Qualified |
603979776 bit |
1.7 V |
AUTO REFRESH |
.055 Amp |
2,4,8 |
18.5 mm |
.12 ns |
||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
90 mA |
524288 words |
NO |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP28,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
32 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
2097152 words |
YES |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX9 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
50 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP20/24,.63,20 |
DRAMs |
.5 mm |
70 Cel |
YES |
3-STATE |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G20 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
150 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J42 |
Not Qualified |
16777216 bit |
e0 |
.0004 Amp |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.