Renesas Electronics DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

UPD48576218F1-E24-DW1-A

Renesas Electronics

SYNCHRONOUS DRAM

OTHER

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

371 mA

33554432 words

2,4,8

NO

COMMON

1.8

18

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

1 mm

95 Cel

32MX18

32M

0 Cel

TIN BISMUTH

BOTTOM

1

R-PBGA-B144

1.9 V

1.2 mm

400 MHz

11 mm

603979776 bit

1.7 V

AUTO REFRESH, TERM PITCH-MAX

e6

.215 Amp

2,4,8

18.5 mm

UPD4217900LE-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

130 mA

2097152 words

NO

COMMON

5

5

9

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX9

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

18874368 bit

e0

.0004 Amp

50 ns

UPD42S4400ALA-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD42S16180LG5-A60-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

YES

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0001 Amp

60 ns

UPD42S17190G5-80-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

1048576 words

YES

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

80 ns

UPD4216805LG5-A70

Renesas Electronics

EDO DRAM

COMMERCIAL

28

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

e0

.0005 Amp

70 ns

MC-458CB644F-A12

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N168

33.02 mm

83 MHz

Not Qualified

536870912 bit

.016 Amp

9 ns

UPD4265405G5-A50-7JD

Renesas Electronics

EDO DRAM

COMMERCIAL

32

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

e0

.0005 Amp

50 ns

UPD4565421G5-A70BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4216402G5-80

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

SRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

80 ns

MC-424000A36FE-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1200 mA

4194304 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

150994944 bit

.012 Amp

70 ns

UPD4217400LE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

80 ns

UPD4216100LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

UPD4265405LE-A60

Renesas Electronics

EDO DRAM

COMMERCIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

67108864 bit

e0

.0005 Amp

60 ns

UPD424100LB-10L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0002 Amp

100 ns

UPD4565821G5-A70L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

145 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

143 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

5.4 ns

MC-45V16AD641F-A80

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1280 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N168

125 MHz

Not Qualified

1073741824 bit

.008 Amp

6 ns

UPD416-2

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

16

DIP

128

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

SEPARATE

+-5,12

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

16KX1

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

16384 bit

e0

200 ns

UPD42S17400LG3A80-7KD

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

80 ns

UPD42116182-10-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G50

100 MHz

Not Qualified

18874368 bit

e0

.002 Amp

4,8

8 ns

UPD42S4810ALE-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

524288 words

YES

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

MC-454AD645F-A10

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1264 mA

4194304 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

R-PDMA-N168

29.21 mm

100 MHz

Not Qualified

268435456 bit

.032 Amp

7 ns

UPD424101LA-60

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

UPD42S17900LG5M-A80

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

80 ns

UPD4216160LG5-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0005 Amp

60 ns

MC-454CA726F-A10

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

825 mA

4194304 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

301989888 bit

.0025 Amp

6 ns

UPD48830LG6-A50

Renesas Electronics

RAMBUS DRAM

COMMERCIAL

72

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

480 mA

1048576 words

COMMON

3.3

3.3

8

SMALL OUTLINE, SHRINK PITCH

SSOP72,.5

DRAMs

.635 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G72

250 MHz

Not Qualified

8388608 bit

e0

.0002 Amp

UPD4217100LA-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

60 ns

UPD42S16190G5-80-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

YES

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

80 ns

UPD48576209FF-E24-DW1-A

Renesas Electronics

DDR1 DRAM

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

872 mA

67108864 words

2,4,8

COMMON

1.8

1.5/1.8,1.8,2.5

9

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

3-STATE

64MX9

64M

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

400 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

.055 Amp

18.5 mm

.3 ns

UPD42S16190LG5-A60-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

YES

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0001 Amp

60 ns

MC-4R64CKE6B-653

Renesas Electronics

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

33554432 words

COMMON

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

32MX16

32M

DUAL

R-PDMA-N184

600 MHz

Not Qualified

536870912 bit

UPD424402LA-70L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0003 Amp

70 ns

UPD42S17800LLE-A50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.00015 Amp

50 ns

UPD424263LG5-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

MC-428LFF721FH-A60

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1035 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

R-PDMA-N168

31.75 mm

Not Qualified

603979776 bit

.0045 Amp

60 ns

UPD41464C-80

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

18

DIP

256

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

85 mA

65536 words

COMMON

5

5

4

IN-LINE

DIP18,.3

DRAMs

2.54 mm

70 Cel

3-STATE

64KX4

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

262144 bit

e0

80 ns

UPD424400AGS-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

UPD4217101G5M-80

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16777216 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

80 ns

MC-421000FA64-70

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

660 mA

1048576 words

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

R-PDMA-N168

25.4 mm

Not Qualified

67108864 bit

.064 Amp

70 ns

MC-4216LFC721FB-A60

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1980 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

R-PDMA-N168

Not Qualified

1207959552 bit

.009 Amp

60 ns

UPD424170LV-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

100 mA

262144 words

NO

COMMON

3.3

3.3

16

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4194304 bit

e0

.0005 Amp

60 ns

MC-421000A8AA-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

1024

PLASTIC/EPOXY

NO

CMOS

200 mA

1048576 words

COMMON

5

5

8

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

17.78 mm

Not Qualified

8388608 bit

e0

.002 Amp

70 ns

UPD48576118FF-E18-DW1

Renesas Electronics

DDR DRAM

OTHER

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1078 mA

33554432 words

2,4,8

SEPARATE

1.8

1.5/1.8,1.8,2.5

18

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

85 Cel

3-STATE

32MX18

32M

0 Cel

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

533 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

.055 Amp

2,4,8

18.5 mm

.12 ns

UPD424800AV-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

90 mA

524288 words

NO

COMMON

5

5

8

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4194304 bit

e0

.0003 Amp

70 ns

UPD42S17900G5-50-7JD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

2097152 words

YES

COMMON

5

5

9

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX9

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

18874368 bit

e0

.0004 Amp

50 ns

UPD424256GXM-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/24,.63,20

DRAMs

.5 mm

70 Cel

YES

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

1048576 bit

e0

.001 Amp

80 ns

UPD42S18170LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

150 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.0004 Amp

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.