Renesas Electronics DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
UPD42S4170LG5A80	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				80 ns
UPD4217100G5-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16777216 bit		e0	.001 Amp		60 ns
UPD424412LA-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.001 Amp		80 ns
UPD42S16400G3-70-7JD	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				70 ns
UPD42S18180G5M80	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				80 ns
UPD42S17100LLA-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	16777216 words		YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24				Not Qualified	16777216 bit		e0	.0001 Amp		80 ns
UPD42S18165LE-70	Renesas Electronics	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	150 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42				Not Qualified	16777216 bit		e0	.00025 Amp		70 ns
UPD4217100LA-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24				Not Qualified	16777216 bit		e0	.001 Amp		50 ns
UPD42S16400G3M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16777216 bit		e0	.00025 Amp		60 ns
UPD42S18165G5-70-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44				Not Qualified	16777216 bit		e0	.00025 Amp		70 ns
UPD4565161G5-A70-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	145 mA	4194304 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54			143 MHz	Not Qualified	67108864 bit		e0	.0005 Amp	1,2,4,8,16	5.4 ns
UPD42S17100G3M-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16777216 bit		e0	.00025 Amp		80 ns
UPD4216410LE-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24				Not Qualified	16777216 bit		e0			100 ns
UPD424402LA-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.001 Amp		60 ns
UPD424400LB-70L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.0002 Amp		70 ns
UPD411000C-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	1048576 bit		e0			100 ns
UPD42S4800V-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	524288 words		YES	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T28				Not Qualified	4194304 bit		e0	.00015 Amp		100 ns
UPD4217800LE-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28				Not Qualified	16777216 bit		e0	.001 Amp		50 ns
MC-424100A8A-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024		PLASTIC/EPOXY	NO	CMOS		720 mA	4194304 words			COMMON	5	5	8		SIP30	DRAMs		70 Cel		3-STATE	4MX8	4M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE			24.0284 mm		Not Qualified	33554432 bit		e0	.008 Amp		80 ns
UPD4217400V-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	110 mA	4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24				Not Qualified	16777216 bit		e0	.001 Amp		60 ns
MC-4516CD641ES-A80L	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1000 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	R-PDMA-N144			125 MHz	Not Qualified	1073741824 bit			.004 Amp		6 ns
UPD42S16180G5M50	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				50 ns
UPD42S18180LG5M-A70	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				70 ns
UPD42S16160G5-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44				Not Qualified	16777216 bit		e0	.00025 Amp		80 ns
MC-4532CC727PF-A75	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	2430 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N168			133 MHz	Not Qualified	2415919104 bit			.018 Amp		5.4 ns
UPD42S17900LLE-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	110 mA	2097152 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32				Not Qualified	18874368 bit		e0	.0001 Amp		60 ns
UPD48288236AFF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		8388608 words	2,4,8		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	8MX36	8M			BOTTOM	R-PBGA-B144			400 MHz	Not Qualified	301989888 bit
MC-42S4LFG64SA-A60	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	520 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	R-PDMA-N144				Not Qualified	268435456 bit			.0008 Amp		60 ns
UPD42S4800G5-10-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28				Not Qualified	4194304 bit		e0	.001 Amp		100 ns
UPD4216100V-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	16777216 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24				Not Qualified	16777216 bit		e0	.001 Amp		80 ns
UPD48288118FF-E25-DW1	Renesas Electronics	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	970 mA	16777216 words			SEPARATE		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM	R-PBGA-B144			400 MHz	Not Qualified	301989888 bit			.048 Amp	2,4,8	.3 ns
MC-411000A1A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY	NO	MOS			1048576 words			SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					Not Qualified	1048576 bit		e0			120 ns
UPD42S4263AG5M-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40				Not Qualified	4194304 bit		e0	.0003 Amp		80 ns
UPD42S17100G3-70-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16777216 bit		e0	.0004 Amp		70 ns
UPD42S4260ALE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40				Not Qualified	4194304 bit		e0	.0003 Amp		80 ns
UPD4216800G5-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28				Not Qualified	16777216 bit		e0	.0004 Amp		50 ns
UPD42S18165LG5-A60-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44				Not Qualified	16777216 bit		e0	.00015 Amp		60 ns
UPD424800G5-80L-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	95 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28				Not Qualified	4194304 bit		e0	.0002 Amp		80 ns
UPD424190LLE-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	110 mA	262144 words		NO	COMMON	3.3	3.3	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40				Not Qualified	4718592 bit		e0	.0001 Amp		70 ns
UPD4216412G5-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16777216 bit		e0			70 ns
UPD4218160LG5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44				Not Qualified	16777216 bit		e0	.0005 Amp		60 ns
MC-458CB641ES-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	R-PDMA-N144		25.4 mm	125 MHz	Not Qualified	536870912 bit			.002 Amp		6 ns
UPD424400LGS-A80-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	60 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20				Not Qualified	4194304 bit		e0	.0005 Amp		80 ns
UPD424400LA-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.001 Amp		100 ns
MC-41256A8B-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD		262144 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	256KX8	256K	0 Cel		SINGLE	R-PSMA-N30		16.7894 mm		Not Qualified	2097152 bit					120 ns
UPD41256D-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified	262144 bit		e0			150 ns
UPD424190LG5M-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	262144 words		NO	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40				Not Qualified	4718592 bit		e0	.0001 Amp		80 ns
UPD4217410V-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24				Not Qualified	16777216 bit		e0			60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.