Renesas Electronics DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
MC-421000A8BB-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	180 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	0 Cel		SINGLE	R-PSMA-N30		16.6624 mm		Not Qualified	8388608 bit			.002 Amp		80 ns
MC-4516CA727PF-A75	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	2160 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	R-PDMA-N168			133 MHz	Not Qualified	1207959552 bit			.036 Amp		5.4 ns
UPD42S17805G5-60-7JD	Renesas Electronics	EDO DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	2097152 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28				Not Qualified	16777216 bit		e0	.00025 Amp		60 ns
UPD424101LA-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.001 Amp		80 ns
MC-42512A36B-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1040 mA	524288 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K	0 Cel		SINGLE	R-PSMA-N72		25.4 mm		Not Qualified	18874368 bit			.024 Amp		70 ns
UPD424412LA-10L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.0003 Amp		100 ns
UPD42S16800LG5A70-7KD	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				70 ns
MC-42256AB9BA-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	210 mA	262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	256KX9	256K	0 Cel		SINGLE	R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit			.003 Amp		80 ns
MC-458DA72F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1290 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL	R-PDMA-N200			100 MHz	Not Qualified	603979776 bit			.018 Amp		8.5 ns
UPD424263ALE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40				Not Qualified	4194304 bit		e0	.0003 Amp		80 ns
UPD42S4100LLA-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	60 mA	4194304 words		YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.0001 Amp		80 ns
UPD424102LA-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.001 Amp		100 ns
UPD424101LA-70L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20				Not Qualified	4194304 bit		e0	.0003 Amp		70 ns
UPD42S18180G5-50	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				50 ns
UPD42644GSM-80L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20				Not Qualified	4194304 bit		e0	.00012 Amp		80 ns
UPD42S17405LLA-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24				Not Qualified	16777216 bit		e0	.00015 Amp		60 ns
UPD42S17900LE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	110 mA	2097152 words		YES	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32				Not Qualified	18874368 bit		e0	.0004 Amp		70 ns
UPD45125821G5-A75-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		16777216 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX8	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54			133 MHz	Not Qualified	134217728 bit		e0		1,2,4,8,16	5.4 ns
MC-424LFG641FW-A50	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	600 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	R-PDMA-N168		25.4 mm		Not Qualified	268435456 bit			.002 Amp		50 ns
UPD42S17900LG5-A70-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	2097152 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	18874368 bit		e0	.0001 Amp		70 ns
UPD42S65400LG-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J34				Not Qualified	67108864 bit		e0			60 ns
UPD424100GS-80L-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20				Not Qualified	4194304 bit		e0	.0002 Amp		80 ns
MC-421000A36FJ-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1320 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE	R-PSMA-N72		31.75 mm		Not Qualified	37748736 bit			.012 Amp		60 ns
UPD42S17800G5-60-7KD	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				60 ns
UPD4216180LE-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	1048576 words		NO	COMMON	5	5	18	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42				Not Qualified	18874368 bit		e0	.0004 Amp		50 ns
UPD42S4263AV-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	140 mA	262144 words		YES	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40				Not Qualified	4194304 bit		e0	.0003 Amp		60 ns
UPD4216160LE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42				Not Qualified	16777216 bit		e0	.001 Amp		80 ns
UPD42S4900ALE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	110 mA	524288 words		YES	COMMON	5	5	9	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28				Not Qualified	4718592 bit		e0	.0003 Amp		70 ns
UPD42S16800G5-60-7KD	Renesas Electronics	FAST PAGE DRAM															5							70 Cel					0 Cel				5.5 V					4.5 V				60 ns
UPD42S16900V-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	2097152 words		YES	COMMON	5	5	9	IN-LINE	ZIP32,.1	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T32				Not Qualified	18874368 bit		e0	.0004 Amp		80 ns
MC-45V8AD64S-A70L	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	680 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	R-PDMA-N144			143 MHz	Not Qualified	536870912 bit			.004 Amp		5.4 ns
UPD4217180G5-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	1048576 words		NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44				Not Qualified	18874368 bit		e0	.0004 Amp		70 ns
MC-4R256CKE6B-745	Renesas Electronics	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		134217728 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	128MX16	128M			DUAL	R-PDMA-N184			711 MHz	Not Qualified	2147483648 bit
MC-424000A36FJ-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1080 mA	4194304 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE	R-PSMA-N72		31.75 mm		Not Qualified	150994944 bit			.012 Amp		80 ns
UPD42S18170LLE-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	130 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42				Not Qualified	16777216 bit		e0	.0001 Amp		80 ns
UPD424412V-60L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	120 mA	1048576 words			COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20				Not Qualified	4194304 bit		e0	.0003 Amp		60 ns
UPD4217805LLE-A50	Renesas Electronics	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28				Not Qualified	16777216 bit		e0	.0005 Amp		50 ns
UPD42S17100G3M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16777216 bit		e0	.00025 Amp		60 ns
UPD4216412G5M-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16777216 bit		e0			70 ns
MC-458CB64LSA-A10BL	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	920 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	R-PDMA-N144		26.67 mm	100 MHz	Not Qualified	536870912 bit			.004 Amp		7 ns
UPD42S16400LE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24				Not Qualified	16777216 bit		e0	.00025 Amp		70 ns
MC-4516CB64S-10B	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1840 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	R-PDMA-N144			100 MHz	Not Qualified	1073741824 bit			.004 Amp		7 ns
UPD42S4900LG5M-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	524288 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28				Not Qualified	4718592 bit		e0	.0001 Amp		60 ns
UPD4218160LLE-A50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	170 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42				Not Qualified	16777216 bit		e0	.0005 Amp		50 ns
UPD42S17800V-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	2097152 words		YES	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T28				Not Qualified	16777216 bit		e0	.0004 Amp		80 ns
UPD424102GS-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20				Not Qualified	4194304 bit		e0	.001 Amp		60 ns
MC-422LFB721F-A70	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	810 mA	2097152 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	2MX72	2M	0 Cel		DUAL	R-PDMA-N168		25.4 mm		Not Qualified	150994944 bit			.0045 Amp		70 ns
UPD424412GSM-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20				Not Qualified	4194304 bit		e0	.001 Amp		60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.