Renesas Electronics DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD42S65800G7-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34					Not Qualified	67108864 bit			e0				80 ns
UPD42S17180G5-60	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V						4.5 V						60 ns
UPD48288218FF-EF25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	16777216 words	2,4,8		COMMON		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD42S16100G5-60-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.0002 Amp			60 ns
UPD4218165G5-70-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		150 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.001 Amp			70 ns
UPD421001V-60	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		90 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0	.001 Amp			60 ns
UPD4218180LE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		170 mA	1048576 words		NO	COMMON	5	5	18	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42					Not Qualified	18874368 bit			e0	.0004 Amp			70 ns
UPD42S16190LG5-A70-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		YES	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	18874368 bit			e0	.0001 Amp			70 ns
UPD424210G5-60-G	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0	.001 Amp			60 ns
MC-4R256CEE6C-653	Renesas Electronics	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	128MX16	128M			DUAL		R-PDMA-N184			600 MHz		Not Qualified	2147483648 bit
UPD424280AV-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		150 mA	262144 words		NO	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40					Not Qualified	4718592 bit			e0	.0003 Amp			70 ns
UPD42S65400G7-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34					Not Qualified	67108864 bit			e0				70 ns
UPD4565421G5-A10AL-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		6 ns
MC-458CB64S-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144		29.21 mm	100 MHz		Not Qualified	536870912 bit				.016 Amp			8 ns
UPD424412GSM-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	4194304 bit			e0	.001 Amp			80 ns
UPD42S4263AG5-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0	.0003 Amp			70 ns
MC-4516CB647PF-A75	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1920 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	1073741824 bit				.008 Amp			5.4 ns
UPD4516421G5A13	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL		R-PDSO-G44			77 MHz		Not Qualified	16777216 bit				.002 Amp	1,2,4,8		12 ns
UPD4265400LE-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0	.0005 Amp			60 ns
UPD421000V-12	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		40 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0	.001 Amp			120 ns
UPD45128163G5-A80L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		270 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	134217728 bit			e0	.0005 Amp	1,2,4,8		6 ns
UPD42S17170LLE-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0	.0001 Amp			70 ns
UPD4217160G5M-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.0004 Amp			80 ns
MC-458CB644F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168		33.02 mm	100 MHz		Not Qualified	536870912 bit				.016 Amp			8 ns
UPD42S4210ALLE-A70	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		70 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40					Not Qualified	4194304 bit			e0	.00008 Amp			70 ns
UPD42S17400G3-70-7JD	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V						4.5 V						70 ns
UPD4217405LA-60	Renesas Electronics	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0	.001 Amp			60 ns
MC-4R96CEE6C-653	Renesas Electronics	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			50331648 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	48MX16	48M			DUAL		R-PDMA-N184			600 MHz		Not Qualified	805306368 bit
UPD42S4810LLE-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		70 mA	524288 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	4194304 bit			e0	.0001 Amp			80 ns
UPD421175G5-30-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	1048576 bit			e0	.001 Amp			70 ns
UPD42S17400LG3-A50-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.00015 Amp			50 ns
UPD42S17400LG3-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.00015 Amp			80 ns
UPD42S18180LG5M-A60	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V						4.5 V						60 ns
UPD42S16100LG3-A80-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	16777216 words		YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.00008 Amp			80 ns
UPD48011318FF-FH16-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm			3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180	1.605 V	1.374 mm	600 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6			18.5 mm
MC-458CA721LS-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1165 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL		R-PDMA-N144			125 MHz		Not Qualified	603979776 bit				.004 Amp			6 ns
UPD42S18190LE-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		190 mA	1048576 words		YES	COMMON	5	5	18	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42					Not Qualified	18874368 bit			e0	.0004 Amp			50 ns
MC-421000A36BJ-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1120 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		31.75 mm			Not Qualified	37748736 bit				.012 Amp			70 ns
UPD4216805G5-60	Renesas Electronics	EDO DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	16777216 bit			e0	.001 Amp			60 ns
UPD42S16100V-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	16777216 words		YES	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24					Not Qualified	16777216 bit			e0	.0002 Amp			80 ns
UPD42S17100G5-60-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.0004 Amp			60 ns
UPD42S16100G3-80-7KD	Renesas Electronics	FAST PAGE DRAM		24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	16777216 words		YES	SEPARATE	5		1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.1 mm		7.62 mm		16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.0002 Amp			80 ns
UPD4564841G5-A10L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8		6 ns
UPD42S4210LE-60-G	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		160 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40					Not Qualified	4194304 bit			e0	.00015 Amp			60 ns
UPD424101GSM-10L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	4194304 bit			e0	.0003 Amp			100 ns
UPD42S4810LG5-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	524288 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	4194304 bit			e0	.0001 Amp			80 ns
UPD42S16180G5-70-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	1048576 words		YES	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	18874368 bit			e0	.0004 Amp			70 ns
UPD2118D-3	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		25 mA	16384 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel		3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	16384 bit			e0				100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.