Renesas Electronics DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

UPD4216400LG3-A50-7JD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.0005 Amp

50 ns

UPD42S16180G5-70

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

70 ns

UPD424100LA-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

UPD4565421G5-A70-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

145 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

143 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

5.4 ns

UPD424280LG5M-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

262144 words

NO

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.0001 Amp

70 ns

UPD48576118FF-E25-DW1-A

Renesas Electronics

DDR DRAM

OTHER

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

872 mA

33554432 words

2,4,8

SEPARATE

1.8

1.5/1.8,1.8,2.5

18

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

85 Cel

3-STATE

32MX18

32M

0 Cel

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

400 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

.055 Amp

2,4,8

18.5 mm

.2 ns

UPD424805AG5-60

Renesas Electronics

EDO DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

MC-421000A9A-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

512

PLASTIC/EPOXY

NO

CMOS

540 mA

1048576 words

COMMON

5

5

9

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

21.6154 mm

Not Qualified

9437184 bit

e0

.003 Amp

100 ns

UPD4217402G5M-60

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

SRAMs

1.27 mm

70 Cel

YES

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

60 ns

UPD48011418FF-FH12-FF1-A

Renesas Electronics

DDR3 DRAM

180

LBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

4

COMMON

1.5

1.5,2.5

18

GRID ARRAY, LOW PROFILE

BGA180,13X18,40

DRAMs

1 mm

3-STATE

64MX18

64M

TIN BISMUTH

BOTTOM

1

R-PBGA-B180

1.605 V

1.374 mm

800 MHz

14 mm

Not Qualified

1207959552 bit

1.395 V

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

e6

18.5 mm

MC-45V8AD64S-A10L

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

560 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N144

100 MHz

Not Qualified

536870912 bit

.004 Amp

6 ns

UPD424101LA-10

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

MC-424100A8B-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

640 mA

4194304 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX8

4M

0 Cel

SINGLE

R-PSMA-N30

24.0284 mm

Not Qualified

33554432 bit

.008 Amp

100 ns

UPD42S16160G5M-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.00025 Amp

60 ns

UPD4217800G5-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

e0

.001 Amp

80 ns

UPD424100GS-60-9KD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

YES

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

MC-424LFG641FW-A60

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

520 mA

4194304 words

NO

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

R-PDMA-N168

25.4 mm

Not Qualified

268435456 bit

.002 Amp

60 ns

UPD42S16160LG5-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.00015 Amp

80 ns

MC-45V8AD64S-A15

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

540 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N144

66 MHz

Not Qualified

536870912 bit

.004 Amp

12 ns

MC-4R256CEE6C-845

Renesas Electronics

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

134217728 words

COMMON

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

128MX16

128M

DUAL

R-PDMA-N184

800 MHz

Not Qualified

2147483648 bit

UPD42S4400AGSM-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

YES

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD4217800G5-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

e0

.0004 Amp

50 ns

UPD4265800LE-A50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

135 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

67108864 bit

e0

.0005 Amp

50 ns

UPD424402GSM-70L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

YES

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0003 Amp

70 ns

UPD4217800LG5M-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

e0

.0005 Amp

60 ns

MC-4R192CEE6C-745

Renesas Electronics

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

100663296 words

COMMON

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

96MX16

96M

DUAL

R-PDMA-N184

711 MHz

Not Qualified

1610612736 bit

UPD4564323G5-A70L-9JH

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

86

TSSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

220 mA

2097152 words

1,2,4,8,FP

COMMON

3.3

3.3

32

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP86,.46,20

DRAMs

.5 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G86

143 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

5.5 ns

UPD424100LLA-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

4194304 words

NO

SEPARATE

3.3

3.3

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD41257L-15

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

18

QCCJ

256

RECTANGULAR

PLASTIC/EPOXY

YES

MOS

J BEND

262144 words

SEPARATE

5

5

1

CHIP CARRIER

LDCC18,.33X.53

DRAMs

1.27 mm

70 Cel

3-STATE

256KX1

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQCC-J18

Not Qualified

262144 bit

e0

150 ns

MC-422000A32FJ-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

780 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

67108864 bit

.016 Amp

80 ns

UPD42S4100AGSMA70

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

70 ns

UPD42S16170LG5-A60-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0001 Amp

60 ns

MC-4R128CEE6B-745

Renesas Electronics

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

67108864 words

COMMON

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

64MX16

64M

DUAL

R-PDMA-N184

711 MHz

Not Qualified

1073741824 bit

UPD424170G5-80-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

105 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

UPD42S17190G5-60-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

1048576 words

YES

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

60 ns

UPD42S4400LA-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.00015 Amp

70 ns

UPD4218160LG5-A70-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0005 Amp

70 ns

UPD421000V-10

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

1048576 words

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

UPD4216101G5-10

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16777216 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

100 ns

UPD4216165G5-60-7JF

Renesas Electronics

EDO DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.001 Amp

60 ns

UPD424190AG5-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

262144 words

NO

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.0003 Amp

60 ns

MC-421000A36B-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

640 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

37748736 bit

.008 Amp

100 ns

UPD42S4170LV-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

90 mA

262144 words

YES

COMMON

3.3

3.3

16

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

UPD42S4190LV-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

120 mA

262144 words

YES

COMMON

3.3

3.3

18

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4718592 bit

e0

.0001 Amp

60 ns

MC-42S8LFF64SD-A50

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1080 mA

8388608 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N144

Not Qualified

536870912 bit

.0016 Amp

50 ns

UPD424412V-10L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

1048576 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.0003 Amp

100 ns

UPD424101GSM-80L

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

YES

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD4216900LG5-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

2097152 words

NO

COMMON

3.3

3.3

9

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX9

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

18874368 bit

e0

.0004 Amp

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.