Renesas Electronics DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD42S16100V-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		80 mA	16777216 words		YES	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24						Not Qualified	16777216 bit			e0			.0002 Amp			70 ns
MC-45V32AD641KF-A75	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2080 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2147483648 bit						.0192 Amp			5.4 ns
UPD42S4263LG5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40						Not Qualified	4194304 bit			e0			.0001 Amp			60 ns
UPD42S16400LE-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0			.00025 Amp			50 ns
UPD4217900LG5M-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	2097152 words		NO	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	18874368 bit			e0			.0004 Amp			70 ns
HM5251325CBP-A6	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		32	GRID ARRAY			1.27 mm	70 Cel			16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108		3.6 V	2.35 mm		14 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1					22 mm	6 ns
UPD424266C-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	1048576 bit			e0			.001 Amp			80 ns
UPD48288209AFF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	301989888 bit							2,4,8
UPD42S16180LG5-A70-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		YES	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	18874368 bit			e0			.0001 Amp			70 ns
UPD4216405G3-50	Renesas Electronics	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0			.001 Amp			50 ns
UPD42S17900LLE-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		90 mA	2097152 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	18874368 bit			e0			.0001 Amp			80 ns
UPD4216400G3M-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0			.001 Amp			70 ns
UPD4217410G5M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0						60 ns
UPD42S16900LG5M-A60	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel						5.5 V						4.5 V								60 ns
MC-42S2000LAD32SA-A80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		261 mA	2097152 words		YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel		3-STATE	2MX32	2M	0 Cel		DUAL		R-PDMA-N72			25.4 mm			Not Qualified	67108864 bit						.0006 Amp			80 ns
UPD4264800LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34						Not Qualified	67108864 bit			e0						80 ns
UPD42S4900AG5M-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	524288 words		YES	COMMON	5	5	9	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	4718592 bit			e0			.0003 Amp			70 ns
UPD4216160LG5-A50-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	16777216 bit			e0			.0005 Amp			50 ns
MC-4516CD647LF-A75	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1320 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	1073741824 bit						.008 Amp			5.4 ns
9179YM-12LFT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS		1024 words		YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel			1KX1	1K	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G28	1	3.465 V	2.51 mm			Not Qualified	1024 bit	3.135 V	SELF CONTAINED REFRESH	e3	30	260			17.88 mm
UPD42S16180G5M60	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel						5.5 V						4.5 V								60 ns
UPD4216405G3-50-7JD	Renesas Electronics	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0			.001 Amp			50 ns
MC-422000A36FJ-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1380 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72			31.75 mm			Not Qualified	75497472 bit						.024 Amp			60 ns
MC-424000A36BE-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1200 mA	4194304 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE		R-PSMA-N72			25.4 mm			Not Qualified	150994944 bit						.012 Amp			70 ns
UPD42S16400G3-60-7KD	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel						5.5 V						4.5 V								60 ns
UPD42S17100G5-70-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0			.0004 Amp			70 ns
UPD4565821G5-A75-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	8388608 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				133 MHz		Not Qualified	67108864 bit			e0			.0005 Amp	1,2,4,8,16		5.4 ns
MC-421000AB40F-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		800 mA	1048576 words			COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX40	1M	0 Cel		SINGLE		R-PSMA-N72						Not Qualified	41943040 bit						.001 Amp			100 ns
UPD411000C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	1048576 bit			e0						150 ns
MC-4516CB646PF-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1840 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168				100 MHz		Not Qualified	1073741824 bit						.008 Amp			6 ns
UPD42S16400LLA-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		70 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0			.00015 Amp			70 ns
UPD42S16400LA-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		70 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0			.00025 Amp			80 ns
UPD42S17170LG5-A80-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	16777216 bit			e0			.0001 Amp			80 ns
UPD424260G5-70L-9KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	SSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP44,.4,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	4194304 bit			e0			.0002 Amp			70 ns
UPD4565821G5-A80L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	8388608 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				125 MHz		Not Qualified	67108864 bit			e0			.0005 Amp	1,2,4,8,16		6 ns
HM51256LP-12	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE				70 Cel			256KX1	256K	0 Cel		DUAL	1	R-PDIP-T16		5.5 V					262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							120 ns
UPD48288218AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8		COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN BISMUTH	BOTTOM		R-PBGA-B144				400 MHz		Not Qualified	301989888 bit			e6
MC-42512A32B-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		780 mA	524288 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	512KX32	512K	0 Cel		SINGLE		R-PSMA-N72			25.4 mm			Not Qualified	16777216 bit						.016 Amp			60 ns
UPD41256C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	262144 bit			e0						150 ns
MC-424000A8FA-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	4194304 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	4MX8	4M	0 Cel		SINGLE		R-PSMA-N30			20.2946 mm			Not Qualified	33554432 bit						.008 Amp			80 ns
UPD424102GSM-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20						Not Qualified	4194304 bit			e0			.001 Amp			100 ns
UPD4217412V-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			4194304 words			COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24						Not Qualified	16777216 bit			e0						60 ns
MC-421000B8B-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		400 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	0 Cel		SINGLE		R-PSMA-N30						Not Qualified	8388608 bit						.008 Amp			120 ns
UPD424800G5-10L-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	4194304 bit			e0			.0002 Amp			100 ns
UPD4217805LG5-A70	Renesas Electronics	EDO DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	16777216 bit			e0			.0005 Amp			70 ns
UPD42S16100G3-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.1 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp			80 ns
UPD421000GXM-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20						Not Qualified	1048576 bit			e0			.001 Amp			100 ns
UPD45125821G5A75L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX8	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				133 MHz		Not Qualified	134217728 bit			e0				1,2,4,8,16		5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.