Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
32 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
85 mA |
8388608 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
920 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
26.67 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
120 mA |
262144 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ40,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
4194304 bit |
e0 |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
100 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
4194304 bit |
e0 |
.0002 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0004 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
105 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
660 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
67108864 bit |
.064 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
560 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.4 mm |
Not Qualified |
8388608 bit |
.008 Amp |
80 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
720 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.4 mm |
Not Qualified |
8388608 bit |
.008 Amp |
60 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
YES |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
e0 |
.001 Amp |
70 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
110 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
18 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J42 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
28 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
e0 |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
ZIP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
IN-LINE |
ZIP24,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T24 |
Not Qualified |
16777216 bit |
e0 |
.00015 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
760 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
7 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
80 mA |
262144 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE |
ZIP40,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.0001 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
140 mA |
524288 words |
NO |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
YES |
3-STATE |
512KX9 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
4718592 bit |
e0 |
.001 Amp |
80 ns |
||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
140 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.00015 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
60 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0004 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0004 Amp |
50 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
524288 words |
NO |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX9 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
4718592 bit |
e0 |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
5 |
70 Cel |
0 Cel |
5.5 V |
4.5 V |
60 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
DDR1 DRAM |
144 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
970 mA |
33554432 words |
COMMON |
1.5,1.8,2.5 |
9 |
GRID ARRAY |
BGA144,12X18,40/32 |
DRAMs |
.8 mm |
3-STATE |
32MX9 |
32M |
BOTTOM |
R-PBGA-B144 |
400 MHz |
Not Qualified |
301989888 bit |
2,4,8 |
|||||||||||||||||||||||||||||||||
Renesas Electronics |
PAGE MODE DRAM |
COMMERCIAL |
18 |
QCCJ |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
MOS |
J BEND |
90 mA |
262144 words |
SEPARATE |
5 |
5 |
1 |
CHIP CARRIER |
LDCC18,.33X.53 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQCC-J18 |
Not Qualified |
262144 bit |
e0 |
85 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2080 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
1073741824 bit |
.008 Amp |
50 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
90 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
QFP |
4096 |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
16777216 words |
NO |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
QFP28,.56SQ,50 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX1 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQFP-G28 |
Not Qualified |
16777216 bit |
e0 |
.0025 Amp |
100 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
50 mA |
262144 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
e0 |
.00012 Amp |
120 ns |
|||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.00025 Amp |
50 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1840 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.004 Amp |
7 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
e0 |
.00015 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
110 mA |
524288 words |
YES |
COMMON |
3.3 |
3.3 |
9 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX9 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
4718592 bit |
e0 |
.0001 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
700 mA |
262144 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX40 |
256K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.4 mm |
Not Qualified |
10485760 bit |
.01 Amp |
80 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0004 Amp |
60 ns |
||||||||||||||||||||||||
Renesas Electronics |
DDR3 DRAM |
OTHER |
180 |
LBGA |
16384 |
RECTANGULAR |
PLASTIC/EPOXY |
MULTI BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
67108864 words |
4 |
YES |
COMMON |
18 |
GRID ARRAY |
BGA180,10X18,40 |
1 mm |
64MX18 |
64M |
BOTTOM |
1 |
R-PBGA-B180 |
1.605 V |
1.35 mm |
667 MHz |
14 mm |
1181116006 bit |
1.395 V |
AUTO/SELF REFRESH |
4 |
18.5 mm |
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Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
135 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
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Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
512 |
PLASTIC/EPOXY |
NO |
CMOS |
560 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
SIP30,.2 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
SINGLE |
21.6154 mm |
Not Qualified |
8388608 bit |
e0 |
.008 Amp |
80 ns |
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|
Renesas Electronics |
DDR DRAM |
144 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
33554432 words |
COMMON |
1.5,1.8,2.5 |
9 |
GRID ARRAY |
BGA144,12X18,40/32 |
DRAMs |
.8 mm |
3-STATE |
32MX9 |
32M |
BOTTOM |
R-PBGA-B144 |
400 MHz |
Not Qualified |
301989888 bit |
2,4,8 |
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Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0005 Amp |
80 ns |
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Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1760 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
1073741824 bit |
.008 Amp |
60 ns |
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Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
4194304 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
e0 |
.00025 Amp |
60 ns |
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Renesas Electronics |
EDO DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
80 mA |
524288 words |
YES |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
4194304 bit |
e0 |
.00015 Amp |
50 ns |
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Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J42 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
80 ns |
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Renesas Electronics |
FAST PAGE DRAM |
5 |
70 Cel |
0 Cel |
5.5 V |
4.5 V |
50 ns |
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Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
18 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
262144 words |
5 |
1 |
CHIP CARRIER |
70 Cel |
256KX1 |
256K |
0 Cel |
QUAD |
1 |
R-PQCC-J18 |
5.5 V |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
85 ns |
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Renesas Electronics |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
100663296 words |
COMMON |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
96MX16 |
96M |
DUAL |
R-PDMA-N184 |
800 MHz |
Not Qualified |
1610612736 bit |
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Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
620 mA |
524288 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.4 mm |
Not Qualified |
16777216 bit |
.016 Amp |
80 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
140 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
50 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.