Renesas Electronics DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MC-42512AB40B-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

400 mA

524288 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX40

512K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

20971520 bit

.005 Amp

100 ns

UPD42S65400G7-A50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

34

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP34,.56

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G34

Not Qualified

67108864 bit

e0

50 ns

UPD48576236FF-E24-DW1-A

Renesas Electronics

DDR1 DRAM

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

891 mA

16777216 words

2,4,8

COMMON

1.8

1.5/1.8,1.8,2.5

36

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

3-STATE

16MX36

16M

TIN BISMUTH

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

400 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

e6

.055 Amp

18.5 mm

.3 ns

UPD424100LA-60L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0002 Amp

60 ns

UPD42S4100AGSMA80

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

80 ns

MC-421000AB40F-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

950 mA

1048576 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX40

1M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

41943040 bit

.001 Amp

80 ns

MC-421000A9AA-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

1024

PLASTIC/EPOXY

NO

CMOS

250 mA

1048576 words

COMMON

5

5

9

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

18.2626 mm

Not Qualified

9437184 bit

e0

.003 Amp

80 ns

UPD4565161G5-A15-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

67 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

12 ns

UPD42S16100G3-80-7JD

Renesas Electronics

FAST PAGE DRAM

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

70 mA

16777216 words

YES

SEPARATE

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.1 mm

7.62 mm

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.0002 Amp

80 ns

MC-458CA721LS-A10

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1165 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

R-PDMA-N144

100 MHz

Not Qualified

603979776 bit

.004 Amp

6 ns

UPD424101V-60L

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

120 mA

4194304 words

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD4216400LA-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

UPD424102GS-80L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD4216180G5-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

NO

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

70 ns

UPD42S4100LGSM-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

4194304 words

YES

SEPARATE

3.3

3.3

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

YES

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0001 Amp

80 ns

UPD4564163G5-A10B-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

165 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8

7 ns

UPD424260LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD42S65800LG-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

34

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J34

Not Qualified

67108864 bit

e0

60 ns

UPD42S16100LG5-A70-7KD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

16777216 words

YES

SEPARATE

3.3

3.3

1

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00008 Amp

70 ns

UPD424410V-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

120 mA

1048576 words

NO

COMMON

5

5

4

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

UPD4265400G5-A50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

e0

.0005 Amp

50 ns

UPD424900LG5-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

524288 words

NO

COMMON

3.3

3.3

9

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4718592 bit

e0

.0001 Amp

80 ns

UPD424800ALE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD4218180G5-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

1048576 words

NO

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

80 ns

MC-421000A9B-12

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

450 mA

1048576 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

SINGLE

R-PSMA-N30

24.0284 mm

Not Qualified

9437184 bit

.009 Amp

120 ns

MC-42256AB9BA-70

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

30

SIMM

256

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

240 mA

262144 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX9

256K

0 Cel

SINGLE

R-PSMA-N30

16.7894 mm

Not Qualified

2359296 bit

.003 Amp

70 ns

MC-421000A32F-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

960 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

33554432 bit

.008 Amp

60 ns

UPD4216165LG5-A70-7JF

Renesas Electronics

EDO DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.00015 Amp

70 ns

UPD424101GS-60L

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD42S18170LE-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

170 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.0004 Amp

50 ns

MC-421000A32F-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

33554432 bit

.008 Amp

80 ns

UPD42S4805AG5-60

Renesas Electronics

EDO DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

524288 words

YES

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.00015 Amp

60 ns

UPD424810LV-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

524288 words

NO

COMMON

3.3

3.3

8

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4194304 bit

e0

.0001 Amp

80 ns

UPD424266V-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

90 mA

262144 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

60 ns

UPD42S18180G5-50-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

190 mA

1048576 words

YES

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

50 ns

UPD416-5

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

16

DIP

128

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

SEPARATE

+-5,12

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

16KX1

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

16384 bit

e0

120 ns

UPD42641GSM-80L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

4194304 words

YES

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

YES

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

MC-452AB645F-A12

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

880 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N168

29.21 mm

83 MHz

Not Qualified

134217728 bit

.016 Amp

8 ns

MC-45V8AB64S-A80

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1080 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N144

125 MHz

Not Qualified

536870912 bit

.004 Amp

6 ns

MC-422000A32FJ-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

700 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

67108864 bit

.016 Amp

100 ns

UPD42S18190LG5-A80-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

1048576 words

YES

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0001 Amp

80 ns

UPD42S4260AG5M-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD42S17100G3-80-7KD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

16777216 words

YES

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

YES

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.0004 Amp

80 ns

MC-424000A8BA-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

4194304 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX8

4M

0 Cel

SINGLE

R-PSMA-N30

20.2946 mm

Not Qualified

33554432 bit

.008 Amp

100 ns

MC-424000A36BD-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1080 mA

4194304 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

150994944 bit

.012 Amp

80 ns

UPD4218165G5-70

Renesas Electronics

EDO DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

UPD42S4260G5-80L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

145 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.00015 Amp

80 ns

MC-45V8AB641EF-A15

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

880 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N168

66 MHz

Not Qualified

536870912 bit

.004 Amp

12 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.