Renesas Electronics DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD42S16400G3-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0	.00025 Amp			70 ns
UPD42S16160LG5M-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	16777216 bit			e0	.00015 Amp			70 ns
UPD42S4800LE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		105 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	4194304 bit			e0	.0001 Amp			70 ns
MC-421000A36FE-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1000 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72			25.4 mm			Not Qualified	37748736 bit				.012 Amp			80 ns
MC-458CD64LS-A10BL	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		760 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			25.4 mm	100 MHz		Not Qualified	536870912 bit				.004 Amp			7 ns
UPD4216402G5M-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0				70 ns
UPD42S18180G5-70	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel						5.5 V						4.5 V						70 ns
MC-422000A36FH-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		940 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72			31.75 mm			Not Qualified	75497472 bit				.024 Amp			100 ns
UPD4216800G5M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	16777216 bit			e0	.001 Amp			60 ns
UPD42S4270LE-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40						Not Qualified	4194304 bit			e0	.0002 Amp			100 ns
UPD4217800LG5M-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	16777216 bit			e0	.0005 Amp			70 ns
MC-4R256CEE6B-653	Renesas Electronics	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	128MX16	128M			DUAL		R-PDMA-N184				600 MHz		Not Qualified	2147483648 bit
UPD42S4810AG5M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	4194304 bit			e0	.0003 Amp			60 ns
UPD42S4900LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		100 mA	524288 words		YES	COMMON	3.3	3.3	9	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28						Not Qualified	4718592 bit			e0	.0001 Amp			70 ns
UPD41464V-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words			COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20						Not Qualified	262144 bit			e0				100 ns
UPD481440LE-70	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		185 mA	262144 words			COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40						Not Qualified	4194304 bit			e0	.001 Amp			70 ns
UPD4217405LA-70	Renesas Electronics	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0	.001 Amp			70 ns
MC-452AB64S-A80L	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1280 mA	2097152 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	2MX64	2M	0 Cel		DUAL		R-PDMA-N144			25.4 mm	125 MHz		Not Qualified	134217728 bit				.016 Amp			6 ns
UPD424412LA-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20						Not Qualified	4194304 bit			e0	.001 Amp			60 ns
UPD4217160LG5M-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	16777216 bit			e0	.0004 Amp			80 ns
MC-458CB646LFA-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168				100 MHz		Not Qualified	536870912 bit				.004 Amp			6 ns
UPD4265400LG-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34						Not Qualified	67108864 bit			e0				60 ns
UPD42S17180G5-50	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel						5.5 V						4.5 V						50 ns
UPD424102GS-10L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20						Not Qualified	4194304 bit			e0	.0003 Amp			100 ns
UPD45256441G5-A10L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	67108864 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				100 MHz		Not Qualified	268435456 bit			e0	.001 Amp	1,2,4,8		6 ns
UPD4216180LG5M-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	1048576 words		NO	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	18874368 bit			e0	.0004 Amp			80 ns
UPD4217400LG3-A50-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0	.0005 Amp			50 ns
MC-422000A36B-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1060 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72			25.4 mm			Not Qualified	75497472 bit				.024 Amp			80 ns
UPD416D	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified	16384 bit			e0				300 ns
MC-41256A9A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				262144 words			COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	256KX9	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					18.0086 mm			Not Qualified	2359296 bit			e0				120 ns
UPD42S16800G5-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	2097152 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	16777216 bit			e0	.00025 Amp			80 ns
MC-454AD646F-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1184 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	268435456 bit				.032 Amp			6 ns
UPD4565162G5-A70B-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		200 mA	4194304 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				142.8 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		4.5 ns
MC-422000F32FA-60	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		324 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	2MX32	2M	0 Cel		SINGLE		R-PSMA-N72			25.4 mm			Not Qualified	67108864 bit				.004 Amp			60 ns
UPD42S18180LE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words		YES	COMMON	5	5	18	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42						Not Qualified	18874368 bit			e0	.0004 Amp			60 ns
RMHE41A364AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40		1 mm				32MX36	32M			BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH			4	18.5 mm
UPD4265800G5-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	67108864 bit			e0	.0005 Amp			70 ns
UPD4217900LG5M-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		NO	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	18874368 bit			e0	.0004 Amp			80 ns
MC-458CA721ESA-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1100 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL		R-PDMA-N144				100 MHz		Not Qualified	603979776 bit				.0025 Amp			6 ns
MC-421000A8AA-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024		PLASTIC/EPOXY		NO		CMOS			180 mA	1048576 words			COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					17.78 mm			Not Qualified	8388608 bit			e0	.002 Amp			80 ns
UPD42S4800ALE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	4194304 bit			e0	.0003 Amp			80 ns
UPD424800LG5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	524288 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	4194304 bit			e0	.0005 Amp			60 ns
UPD42S17900G5M50	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel						5.5 V						4.5 V
UPD42S16800LG5M-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	16777216 bit			e0	.0004 Amp			70 ns
UPD4164C-1	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	65536 bit			e0				250 ns
UPD41257V-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16						Not Qualified	262144 bit			e0				200 ns
UPD42S4260LG5M-15	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		45 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40						Not Qualified	4194304 bit			e0	.00025 Amp			150 ns
UPD42S17100LG3-A70-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words		YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0	.0001 Amp			70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.