Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
PAGE MODE DRAM |
INDUSTRIAL |
18 |
QCCJ |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
PAGE |
YES |
1 |
NMOS |
J BEND |
ASYNCHRONOUS |
262144 words |
5 |
1 |
CHIP CARRIER |
1.27 mm |
85 Cel |
3-STATE |
256KX1 |
256K |
-40 Cel |
QUAD |
1 |
R-PQCC-J18 |
5.5 V |
3.53 mm |
7.366 mm |
Not Qualified |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
12.446 mm |
150 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
60 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.14 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
SYNCHRONOUS |
60 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOLCC20/26,.35 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.003 Amp |
17.145 mm |
120 ns |
|||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
24 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
80 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.14 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
520 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
20.4978 mm |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
100 ns |
||||||||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP2 |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
140 mA |
262144 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-G40 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
18.41 mm |
80 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
44 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
100 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
20.95 mm |
70 ns |
|||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
512 |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
55 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOLCC20/26,.35 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
-55 Cel |
DUAL |
R-XDSO-N20 |
Not Qualified |
1048576 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.003 Amp |
120 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
MOS |
J BEND |
ASYNCHRONOUS |
100 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
50 ns |
|||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
MILITARY |
50 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
DUAL BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
1048576 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
125 Cel |
3-STATE |
1MX16 |
1M |
-55 Cel |
DUAL |
1 |
R-PDSO-G50 |
3.465 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3.135 V |
AUTO REFRESH |
20.95 mm |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
70 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
27.305 mm |
80 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
50 |
DFP |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
YES |
1 |
CMOS |
FLAT |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
FLATPACK |
.8 mm |
125 Cel |
1MX16 |
1M |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-XDFP-F50 |
5.5 V |
3.55 mm |
16.5 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
21 mm |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIP30,.2 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-T30 |
5.5 V |
16.51 mm |
Not Qualified |
2097152 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
2097152 words |
YES |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
2MX8 |
2M |
0 Cel |
DUAL |
1 |
R-PDSO-J28 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
18.415 mm |
80 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
70 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
2097152 words |
YES |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
2MX8 |
2M |
0 Cel |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
18.415 mm |
80 ns |
||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
16777216 words |
YES |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/AUTO/SELF REFRESH |
22.22 mm |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2097152 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
4194304 words |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
301989888 bit |
3 V |
7 ns |
||||||||||||||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
120 ns |
||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
32 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
16777216 words |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
20.95 mm |
60 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
18 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
1048576 words |
5 |
1 |
IN-LINE |
2.54 mm |
3-STATE |
1MX1 |
1M |
DUAL |
1 |
R-PDIP-T18 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
22.48 mm |
150 ns |
||||||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
DUAL BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
2097152 words |
YES |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
AUTO/SELF REFRESH |
18.41 mm |
||||||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2080 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
QUAD |
1 |
R-XQMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
90 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.145 mm |
70 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
520 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
25.4 mm |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.0006 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2-R |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
YES |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH |
17.14 mm |
80 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
32 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
2097152 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
2MX8 |
2M |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
20.95 mm |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
70 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
80 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.14 mm |
80 ns |
|||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
NIBBLE MODE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NIBBLE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
65 mA |
4194304 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
100 ns |
|||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
70 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
70 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
80 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
262144 words |
YES |
5 |
16 |
SMALL OUTLINE |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-J40 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
70 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
390 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.527 mm |
Not Qualified |
37748736 bit |
.004 Amp |
60 ns |
|||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
50 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
MOS |
GULL WING |
ASYNCHRONOUS |
140 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G50 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
20.95 mm |
40 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE BANK PAGE BURST |
NO |
1 |
MOS |
NO LEAD |
SYNCHRONOUS |
2160 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
GOLD |
DUAL |
1 |
R-PDMA-N168 |
3.6 V |
25.53 mm |
Not Qualified |
301989888 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
e4 |
.018 Amp |
133.35 mm |
50 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
4194304 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
CAS BEFORE RAS |
17.14 mm |
80 ns |
||||||||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
OTHER |
18 |
QCCN |
256 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
PAGE |
YES |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
65536 words |
5 |
4 |
CHIP CARRIER |
1.27 mm |
110 Cel |
3-STATE |
64KX4 |
64K |
-55 Cel |
QUAD |
1 |
R-CQCC-N18 |
5.5 V |
2.18 mm |
7.24 mm |
Not Qualified |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
12.32 mm |
120 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
16777216 words |
3.3 |
1 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
16MX1 |
16M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
17.14 mm |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
50 |
DFP |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE WITH EDO |
YES |
1 |
MOS |
38535Q/M;38534H;883B |
FLAT |
ASYNCHRONOUS |
180 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
FLATPACK |
FL50,.67,32 |
DRAMs |
.8 mm |
125 Cel |
3-STATE |
1MX16 |
1M |
-55 Cel |
DUAL |
1 |
R-CDFP-F50 |
5.5 V |
3.55 mm |
16.5 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
21 mm |
70 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
80 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
24 |
SON |
4096 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
80 mA |
16777216 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOLCC24/28,.45 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
16MX1 |
16M |
-55 Cel |
DUAL |
1 |
R-CDSO-N24 |
5.5 V |
3.18 mm |
11.43 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
19.685 mm |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.