Texas Instruments DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

TMS4256-15FME

Texas Instruments

PAGE MODE DRAM

INDUSTRIAL

18

QCCJ

256

RECTANGULAR

PLASTIC/EPOXY

PAGE

YES

1

NMOS

J BEND

ASYNCHRONOUS

262144 words

5

1

CHIP CARRIER

1.27 mm

85 Cel

3-STATE

256KX1

256K

-40 Cel

QUAD

1

R-PQCC-J18

5.5 V

3.53 mm

7.366 mm

Not Qualified

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

12.446 mm

150 ns

TMS46400P-70DGA

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

LSOP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

60 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, LOW PROFILE

TSSOP20/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-G20

3.6 V

1.27 mm

7.62 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.14 mm

70 ns

SMJ4C1024-12HLM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

SYNCHRONOUS

60 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOLCC20/26,.35

DRAMs

1.27 mm

125 Cel

3-STATE

1MX1

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS REFRESH

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

17.145 mm

120 ns

TM4256FL8-15

Texas Instruments

TMS426409A-70DGA

Texas Instruments

EDO DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

SYNCHRONOUS

80 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.14 mm

70 ns

TM024GAD8-10L

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

520 mA

1048576 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

20.4978 mm

Not Qualified

8388608 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

100 ns

TM248NBK36BK36T-60

Texas Instruments

TMS45160-80DGE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

40

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

140 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

1

R-PDSO-G40

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.41 mm

80 ns

TMS416169A-70DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

100 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

20.95 mm

70 ns

TM124BBK32-60S

Texas Instruments

SMJ44C256-12HMM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

512

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

55 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOLCC20/26,.35

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

R-XDSO-N20

Not Qualified

1048576 bit

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

120 ns

TMS416400A-50DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

MOS

J BEND

ASYNCHRONOUS

100 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

50 ns

SMJ626162-15DGEM

Texas Instruments

SYNCHRONOUS DRAM

MILITARY

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-PDSO-G50

3.465 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3.135 V

AUTO REFRESH

20.95 mm

TMS416160-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

27.305 mm

80 ns

5962-9674302QXX

Texas Instruments

FAST PAGE DRAM

MILITARY

50

DFP

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

FLAT

ASYNCHRONOUS

1048576 words

5

16

FLATPACK

.8 mm

125 Cel

1MX16

1M

-55 Cel

TIN LEAD

DUAL

1

R-XDFP-F50

5.5 V

3.55 mm

16.5 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

21 mm

70 ns

TM4256FL8-15L

Texas Instruments

DRAM MODULE

COMMERCIAL

30

256

RECTANGULAR

UNSPECIFIED

PAGE

NO

1

NMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

SINGLE

1

R-XSMA-T30

5.5 V

16.51 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

150 ns

TMS427800P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

YES

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

18.415 mm

80 ns

TM124BBK32-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

70 ns

TMS416800P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

YES

5

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

18.415 mm

80 ns

TMS664414-12DGER

Texas Instruments

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

16777216 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/AUTO/SELF REFRESH

22.22 mm

TM248CBK32S-60L

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

32

MICROELECTRONIC ASSEMBLY

70 Cel

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

60 ns

TM4SR72EPH-10BU

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4194304 words

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

301989888 bit

3 V

7 ns

TMS4256-12NL

Texas Instruments

PAGE MODE DRAM

COMMERCIAL

16

DIP

256

RECTANGULAR

PLASTIC/EPOXY

PAGE

NO

1

NMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

SEPARATE

5

5

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

256KX1

256K

0 Cel

DUAL

1

R-PDIP-T16

5.5 V

5.08 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

19.305 mm

120 ns

TMS464400-60DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.95 mm

60 ns

TMX4C1024-15N

Texas Instruments

FAST PAGE DRAM

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

5

1

IN-LINE

2.54 mm

3-STATE

1MX1

1M

DUAL

1

R-PDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

22.48 mm

150 ns

TMS626812-15DGE

Texas Instruments

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

2097152 words

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

18.41 mm

TM893GBK32H-50

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

YES

1

CMOS

NO LEAD

SYNCHRONOUS

2080 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

QUAD

1

R-XQMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

50 ns

TMS44400P-70DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.145 mm

70 ns

TM4FJ64NPU-50

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

144

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

520 mA

4194304 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

25.4 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.0006 Amp

50 ns

TMS416400P-80DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2-R

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH

17.14 mm

80 ns

TMS416800-60DE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

20.95 mm

60 ns

TMS426400A-60DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

3.6 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

60 ns

TMS427800A-70DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

70 ns

TMS44100-80DGA

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

LSOP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

80 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE, LOW PROFILE

TSSOP20/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

DUAL

1

R-PDSO-G20

5.5 V

1.27 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.14 mm

80 ns

SM4C1024-15JD

Texas Instruments

TMS44101-10SD

Texas Instruments

NIBBLE MODE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

65 mA

4194304 words

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

ZIG-ZAG

1

R-PZIP-T20

5.5 V

10.16 mm

2.8 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

100 ns

TMS416400-70DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

70 ns

TM124FBK32S-80

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

MOS

NO LEAD

ASYNCHRONOUS

640 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

80 ns

TMS45160DZP-70

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

40

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

SYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE

70 Cel

256KX16

256K

0 Cel

DUAL

1

R-PDSO-J40

5.5 V

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

70 ns

TM124MBK36V-60

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

390 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

25.527 mm

Not Qualified

37748736 bit

.004 Amp

60 ns

TMS464169P-40DGE

Texas Instruments

EDO DRAM

COMMERCIAL

50

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

140 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

20.95 mm

40 ns

TM4EP72BPN-50

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

PLASTIC/EPOXY

SINGLE BANK PAGE BURST

NO

1

MOS

NO LEAD

SYNCHRONOUS

2160 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

GOLD

DUAL

1

R-PDMA-N168

3.6 V

25.53 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e4

.018 Amp

133.35 mm

50 ns

TMS417400DGA-80

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS

17.14 mm

80 ns

SMJ4464-12FVS

Texas Instruments

PAGE MODE DRAM

OTHER

18

QCCN

256

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

PAGE

YES

1

NMOS

NO LEAD

ASYNCHRONOUS

65536 words

5

4

CHIP CARRIER

1.27 mm

110 Cel

3-STATE

64KX4

64K

-55 Cel

QUAD

1

R-CQCC-N18

5.5 V

2.18 mm

7.24 mm

Not Qualified

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

12.32 mm

120 ns

TMS426100-60DGA

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

3.3

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

16MX1

16M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

17.14 mm

60 ns

SMJ418160-70HKDM

Texas Instruments

FAST PAGE DRAM

MILITARY

50

DFP

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE WITH EDO

YES

1

MOS

38535Q/M;38534H;883B

FLAT

ASYNCHRONOUS

180 mA

1048576 words

NO

COMMON

5

5

16

FLATPACK

FL50,.67,32

DRAMs

.8 mm

125 Cel

3-STATE

1MX16

1M

-55 Cel

DUAL

1

R-CDFP-F50

5.5 V

3.55 mm

16.5 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

21 mm

70 ns

TM024GAD8-80

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

1MX8

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

Not Qualified

8388608 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

80 ns

SMJ416100-70FNCM

Texas Instruments

FAST PAGE DRAM

MILITARY

24

SON

4096

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

80 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOLCC24/28,.45

DRAMs

1.27 mm

125 Cel

3-STATE

16MX1

16M

-55 Cel

DUAL

1

R-CDSO-N24

5.5 V

3.18 mm

11.43 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

19.685 mm

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.