Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
THLY648031BFG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	125 MHz		Not Qualified	536870912 bit	3 V					.008 Amp			6 ns
TC59S6404CFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	95 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0			.001 Amp	1,2,4,8	22.22 mm	7 ns
TC524256Z-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					36.2 mm	120 ns
TC514280BJLL-70	Toshiba	FAST PAGE DRAM		40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			262144 words				5		18	SMALL OUTLINE				1.27 mm			256KX18	256K		TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V		e0					26.04 mm	70 ns
TC5118165CJ-60	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						27.31 mm	60 ns
TC59LM836DKG-30	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS	850 mA	8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	0 Cel		BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm	333 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	18.5 mm	.5 ns
THM324000SG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	134217728 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
TC5116105BST-50	Toshiba	EDO DRAM		24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING			16777216 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm			16MX1	16M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V							18.41 mm	50 ns
THM328020BSG-50	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.25 V				Not Qualified	268435456 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
TC511000APL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					22 mm	80 ns
TMM41257AP-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		72 mA	262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0						120 ns
TC514256BTRL-60	Toshiba	OTHER DRAM		24	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm			256KX4	256K			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V							14.4 mm	60 ns
TMM4164C-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0						120 ns
THLY6480H1FG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							5.4 ns
TC528126BZ-10	Toshiba	VIDEO DRAM	COMMERCIAL	40	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		131072 words				5		8	IN-LINE				1.27 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T40	5.5 V	12.07 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					51.2 mm	100 ns
TC5116400BZ-60	Toshiba	OTHER DRAM		24	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			4194304 words				5		4	IN-LINE							4MX4	4M			ZIG-ZAG	1	R-PZIP-T24	5.5 V				Not Qualified	16777216 bit	4.5 V								60 ns
TC514440CFT-70	Toshiba	FAST PAGE DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm			1MX4	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V							17.14 mm	70 ns
THL64V4075ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH							50 ns
TMM41257P-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0						150 ns
THM65V8015ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		8388608 words				3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	536870912 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							40 ns
TC5118180BFT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		18	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX18	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					20.95 mm	60 ns
THM3251F0BSG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	512KX32	512K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
TC514900AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		90 mA	524288 words		NO	COMMON	5	5	9	IN-LINE	ZIP28,.1		DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28					Not Qualified	4718592 bit			e0			.001 Amp			100 ns
TC5165405AJ-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.96 mm	50 ns
TC514190BZ-70	Toshiba	OTHER DRAM		40	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			262144 words				5		18	IN-LINE				1.27 mm			256KX18	256K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm			Not Qualified	4718592 bit	4.5 V		e0					51.2 mm	70 ns
TC5117800CSJS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words		YES		5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						18.42 mm	60 ns
THMR1E8E-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	64MX18	64M			DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	800 MHz	4.8 mm	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm	45 ns
THL324010TG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			4194304 words						32	SMALL OUTLINE							4MX32	4M			DUAL	1	R-PDSO-G72					Not Qualified	134217728 bit									70 ns
THM98020CTS-50	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						9	SMALL OUTLINE							8MX9	8M			DUAL	1	R-PDSO-G30					Not Qualified	75497472 bit									50 ns
THM84020AL-60	Toshiba	DRAM MODULE									1	CMOS				4194304 words						8								4MX8	4M				1						Not Qualified	33554432 bit									60 ns
THMR1N16E-6	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX16	128M			DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	600 MHz	8 mm	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
TC524256BJ-80	Toshiba	VIDEO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.42 mm	80 ns
TH8D362000UA-70LU	Toshiba	DRAM CARD	COMMERCIAL	88			UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY					55 Cel	3-STATE	2MX36	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88					Not Qualified	75497472 bit		RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; UNBUFFERED CONTROL LINES							70 ns
TMM41257AZ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	262144 words			SEPARATE	5	5	1	IN-LINE	ZIP16,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16					Not Qualified	262144 bit			e0						100 ns
TC5116400Z-70	Toshiba	OTHER DRAM		24	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			4194304 words				5		4	IN-LINE							4MX4	4M			ZIG-ZAG	1	R-PZIP-T24	5.5 V				Not Qualified	16777216 bit	4.5 V								70 ns
TC51V4256BFT-80	Toshiba	OTHER DRAM		20	TSOP1		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				3.3		4	SMALL OUTLINE, THIN PROFILE				.5 mm			256KX4	256K			DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V							14.4 mm	80 ns
THM164020ASG-70	Toshiba	DRAM MODULE									1					4194304 words						16								4MX16	4M				1						Not Qualified	67108864 bit									70 ns
TC514100AZL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25.8 mm	60 ns
TC514256BJL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					17.15 mm	60 ns
THMY25E11C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1530 mA	33554432 words		YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	34.98 mm	143 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX				.009 Amp		133.35 mm	5.4 ns
THM84000ASG-80	Toshiba	DRAM MODULE									1	CMOS				4194304 words						8								4MX8	4M				1						Not Qualified	33554432 bit									80 ns
THM91620TS-70	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			16777216 words						9	SMALL OUTLINE							16MX9	16M			DUAL	1	R-PDSO-G30					Not Qualified	150994944 bit									70 ns
THM73V8015ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		8388608 words				3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	603979776 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							40 ns
TC51V18165BJ-60	Toshiba	EDO DRAM MODULE							FAST PAGE WITH EDO		1	CMOS		ASYNCHRONOUS		1048576 words						16								1MX16	1M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
THLY724031BFG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	700 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	301989888 bit	3 V					.005 Amp			6 ns
TC5117405CST-50	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.14 mm	50 ns
TC59LM814BFT-22	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	16777216 words	2,4	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	153 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4	22.22 mm	.85 ns
TC5165805AFT-60	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					20.95 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.