Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC528267J-80	Toshiba	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		DUAL	2	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH				26.04 mm	80 ns
TC5116160AFT-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			20.95 mm	80 ns
TC511000BFT-80	Toshiba	FAST PAGE DRAM		20	TSOP1		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				5		1	SMALL OUTLINE, THIN PROFILE				.5 mm			1MX1	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V					14.4 mm	80 ns
THM91010S-12	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		450 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel		SINGLE		R-PSMA-N30					Not Qualified	9437184 bit				.009 Amp			120 ns
TC5116400BJ-50	Toshiba	OTHER DRAM		28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words				5		4	SMALL OUTLINE							4MX4	4M			DUAL	1	R-PDSO-J28	5.5 V				Not Qualified	16777216 bit	4.5 V						50 ns
TC514400AP-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			24.6 mm	100 ns
THLY648051FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	720 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-X144	3.6 V	25.4 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp			6 ns
THM94000L-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	4MX9	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				100 ns
TC5116165CFT-50	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				20.95 mm	50 ns
TC5117400FT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	60 ns
TMM41256AP-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		72 mA	262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0				120 ns
TC59LM836DMB-30	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm	250 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0		2,4	18.5 mm	.5 ns
TMM41256C-20	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	262144 bit			e0				200 ns
TC59SM816CMB-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B60	3.6 V	1.2 mm		7.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				15.72 mm	6 ns
TC51V18180AJ-70	Toshiba	OTHER DRAM		42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			1048576 words				3.3		18	SMALL OUTLINE				1.27 mm			1MX18	1M			DUAL	1	R-PDSO-J42	3.6 V	3.7 mm		10.16 mm	Not Qualified	18874368 bit	3 V					27.31 mm	70 ns
TC511664BFT-80	Toshiba	OTHER DRAM		40	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			65536 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K			DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V					18.41 mm	80 ns
TC5117400BJ-70	Toshiba	FAST PAGE DRAM							FAST PAGE		1	CMOS		ASYNCHRONOUS		4194304 words						4								4MX4	4M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					70 ns
TC5117400BFT-50	Toshiba	FAST PAGE DRAM							FAST PAGE		1	CMOS		ASYNCHRONOUS		4194304 words						4								4MX4	4M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					50 ns
TC51V17440BSJ-60	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words				3.3		4	SMALL OUTLINE							4MX4	4M			DUAL	1	R-PDSO-J26	3.6 V				Not Qualified	16777216 bit	3 V						60 ns
TC59LM914AMB-37	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e0			16.5 mm	22 ns
THM368020SG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		8MX36	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	301989888 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					70 ns
THM91021AL-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel		1MX9	1M	0 Cel		UNSPECIFIED	1	X-XXMA-X30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					70 ns
TC514256BFTL-10	Toshiba	OTHER DRAM		20	TSOP1		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm			256KX4	256K			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V					14.4 mm	10 ns
THL321010ATS-8L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE							1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit							80 ns
THM322500AS-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		16	MICROELECTRONIC ASSEMBLY					70 Cel		512KX16	512K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					100 ns
THM8512S-12	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		114 mA	524288 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		SINGLE		R-PSMA-N30					Not Qualified	4194304 bit				.004 Amp			120 ns
THM81020L-12	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			400 mA	1048576 words			COMMON	5	5	8		SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	8388608 bit			e0	.008 Amp			120 ns
TC59SM808CFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
THM81000BSG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		8	MICROELECTRONIC ASSEMBLY					70 Cel		1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
TC59S6404FTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	22.22 mm	8 ns
TC514256BFT-70	Toshiba	OTHER DRAM		20	TSOP1		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm			256KX4	256K			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V					14.4 mm	70 ns
TC5165165BFT-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp		20.95 mm	40 ns
TC51V16440BSJ-60	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words				3.3		4	SMALL OUTLINE							4MX4	4M			DUAL	1	R-PDSO-J26	3.6 V				Not Qualified	16777216 bit	3 V						60 ns
TH81070CL-50	Toshiba	DRAM MODULE									1	CMOS				1048576 words						8								1MX8	1M				1						Not Qualified	8388608 bit							50 ns
TC524256BJ-10	Toshiba	VIDEO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			18.42 mm	100 ns
TC514256PL-12	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		55 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0	.0003 Amp			120 ns
TC5117405BST-70	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		95 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.001 Amp			70 ns
TC59S6404FT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	22.22 mm	8 ns
THMY51E01C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		8	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		64MX8	64M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	34.85 mm		4 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm	5.4 ns
TC5116100FT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	70 ns
TC51V16105BST-60	Toshiba	OTHER DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING			4194304 words				3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm			4MX4	4M			DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	3 V					17.14 mm	60 ns
TC51V4400APL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words		NO	COMMON	3.3	3.3	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	4194304 bit			e0	.00015 Amp			80 ns
TC5117445CSJ-50	Toshiba	EDO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				18.42 mm	50 ns
THMR1N16E-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX16	128M			DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX				133.35 mm
TC514400AZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	100 ns
TC514400AFTL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0			17.14 mm	80 ns
TC5164405AJS-40	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH				20.96 mm	40 ns
THM324080ASG-60	Toshiba	DRAM MODULE									1	CMOS				4194304 words						32								4MX32	4M				1						Not Qualified	134217728 bit							60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.