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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
NT5CC128M16IP-DII	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
NT6AN256T32AV-J2	Nanya Technology	LPDDR4 DRAM	OTHER	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	105 Cel	3-STATE	256MX32	256M		-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.83 mm	1866 MHz	10 mm		8589934592 bit	1.06 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY VOLTAGE					16,32	15 mm
NT6CL512T32AM-H1	Nanya Technology	DDR3L DRAM	OTHER	178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA178,13X17,32/25			.8 mm	105 Cel	3-STATE	512MX32	512M		-30 Cel		BOTTOM	1	R-PBGA-B178		1.3 V	.83 mm	933 MHz	10.5 mm		17179869184 bit	1.14 V							11.5 mm
NT6DM32M16BD-T1	Nanya Technology	DDR1 DRAM	OTHER	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M		-25 Cel		BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						9 mm	5 ns
NT6DM32M16BD-T1I	Nanya Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M		-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	5 ns
S27KS0642GABHV023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	25 mA	8388608 words		YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			1 mm	105 Cel	3-STATE	8MX8	8M		-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V					.00033 Amp		8 mm
S70KL1282DPBHA023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words		YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			1 mm	85 Cel	3-STATE	16MX8	16M		-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V					.0005 Amp		8 mm
S70KL1283DPBHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	56 mA	16777216 words		YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			1 mm	105 Cel		16MX8	16M		-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH				.00075 Amp		8 mm	35 ns
S80KS2564GACHV040	Infineon Technologies	HYPERRAM		49	VBGA		SQUARE	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	22 mA	16777216 words		YES	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE	BGA49,7X7,20			1 mm	105 Cel		16MX16	16M		-40 Cel		BOTTOM	1	S-PBGA-B49	3	2 V	1 mm	200 MHz	8 mm		268435456 bit	1.7 V	SELF REFRESH				.00155 Amp		8 mm	35 ns
W631GU6MB-12	Winbond Electronics	DDR3L DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	95 Cel		64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W631GU6MB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	95 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W631GU6MB12J	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	105 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB-12	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	95 Cel		128MX16	128M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W971GG6SB25I	Winbond Electronics	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX16	64M				BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.5 mm	.4 ns
AS4C128M16D3LC-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	134217728 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm	95 Cel	3-STATE	128MX16	128M	1.283 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	800 MHz	7.5 mm		2147483648 bit	1.283 V	AUTO REFRESH, SELF REFRESH				.015 Amp	4,8	13 mm
AS4C8M16SA-7TCNTR	Alliance Memory	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	65 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	70 Cel	3-STATE	8MX16	8M	3 V	0 Cel	TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	143 MHz	10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
IS43R16320D-6BL	Integrated Silicon Solution	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	370 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32		DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.025 Amp	2,4,8	13 mm	.7 ns
IS43R16800E-6TLI	Integrated Silicon Solution	DDR1 DRAM	INDUSTRIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	220 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.65 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				.003 Amp	2,4,8	22.22 mm	.7 ns
MT41K512M8DA-107AAT:PTR	Micron Technology	DDR3L DRAM																																	TIN SILVER COPPER														30	260
MT48LC16M16A2B4-7E:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm	143 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT48LC16M16A2B4-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M		0 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			8 mm	5.4 ns
W632GG6NB12J	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	105 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MTA8ATF1G64HZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
MT48LC8M16A2P-7EIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MTA4ATF1G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES	COMMON			64	MICROELECTRONIC ASSEMBLY					95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N260				1600 MHz			68719476736 bit		AUTO/SELF REFRESH		30	260
MTA4ATF51264HZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words				1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	WD-MAX						69.6 mm
M471B5173QH0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				.6 mm	85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm		3.8 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX						67.6 mm
MTA9ASF1G72HZ-3G2R1	Micron Technology	DDR4 DRAM MODULE
MT53E768M32D4DT-053WT:E	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25			.8 mm	85 Cel	3-STATE	768MX32	768M		-25 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT60B2G8HB-48B:A	Micron Technology	DDR5 DRAM		82	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.1		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA82,11X13,32			.8 mm	95 Cel	3-STATE	2GX8	2G		0 Cel		BOTTOM	1	R-PBGA-B82			1 mm	2403.8 MHz	9 mm		17179869184 bit		SELF REFRESH						11 mm
MT61K256M32JE-14:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT61K256M32JE-21:T	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16		.75 mm	95 Cel	OPEN-DRAIN	256MX32	256M		0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V						14 mm
MT48LC8M16A2P-7EIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	330 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MTA4ATF51264HZ-2G6E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words				1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	WD-MAX						69.6 mm
MTA8ATF51264HZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		512MX72	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MB814400A-70PZ	Fujitsu	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	100 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm		2.85 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		25.88 mm	70 ns
MT16KTF2G64HZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		137438953472 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT18KSF51272HZ-1G6K2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				.6 mm	70 Cel		512MX72	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT40A4G8BAF-062E:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	245 mA	4294967296 words		YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X11,32			.8 mm	95 Cel		4GX8	4G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10.5 mm		34359738368 bit	1.14 V		e1	30	260			11 mm
MT40A4G8NEA-062E:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	205 mA	4294967296 words		YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X11,32			.8 mm	95 Cel		4GX8	4G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm		34359738368 bit	1.14 V			30	260			11 mm
MT41J512M8THU-15E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT42L32M32D1HE-18AAT:D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	200 mA	33554432 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25			.65 mm	105 Cel	3-STATE	32MX32	32M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm	533 MHz	10 mm		1073741824 bit	1.14 V					.005 Amp	4,8,16	11.5 mm
MT47H64M8SH-25EIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	4,8	10 mm	.4 ns
MT4C1M16C3DJ-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		27.33 mm	60 ns
MT53E256M32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	105 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm		8589934592 bit	1.06 V						16,32	14.5 mm
MT53E256M32D2FW-046WT:B	Micron Technology	LPDDR4 DRAM
MTA8ATF1G64HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.