DRAM

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT40A2G8NRE-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			2GX8	2G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		17179869184 bit	1.14 V	SELF REFRESH						12 mm
MT53D1024M32D4DT-053AAT:D	Micron Technology	DDR4 DRAM			BGA		UNSPECIFIED	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words						32	GRID ARRAY							1GX32	1G				BOTTOM	1	X-PBGA-B							34359738368 bit				NOT SPECIFIED	NOT SPECIFIED
W631GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	800 MHz	7.5 mm		1073741824 bit	1.425 V					.04 Amp	8	13 mm	20 ns
IS43TR16256BL-107MBLI-TR	Integrated Silicon Solution	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	254 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	934.5 MHz	9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	4,8	13 mm
MT41J64M16JT-15EAAT:G	Micron Technology	DDR3 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	265 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm			3-STATE	64MX16	64M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.255 ns
MT47H64M16HR-25EIT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.4 ns
MT48LC4M32B2P-6:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			4MX32	4M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.5 ns
MT48LC4M32B2P-6AAAT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	105 Cel			4MX32	4M		-40 Cel		DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
W956D8MBYA5I	Winbond Electronics	HYPERRAM		24	TBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words		YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M		-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1.2 mm	200 MHz	6 mm		67108864 bit	1.7 V	AUTO/SELF REFRESH				.00025 Amp		8 mm
MT40A1G16KNR-075:ETR	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	1073741824 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	7.5 mm		17179869184 bit	1.14 V			NOT SPECIFIED	NOT SPECIFIED	.036 Amp		13.5 mm
MT40A1G16RC-062E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	1.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT41J64M16JT-15EXIT:G	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT18HTF12872AZ-80EG1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1413 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel		3-STATE	128MX72	128M		0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			400 MHz		Not Qualified	9663676416 bit			e3						.4 ns
MT41J64M16JT-15:E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel			64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT48LC32M16A2P-75L:C	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	255 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0035 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC8M16A2P-6AIT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	330 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX16	8M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3		260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT53D512M16D1DS-046AIT:D	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2136.7 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
AS4C4M16SA-6BIN	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e1					8 mm	5.4 ns
EDB4432BBBJ-1DAIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel			128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
MT46V32M16CV-5BIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel		3-STATE	32MX16	32M		-40 Cel	Tin/Lead/Silver (Sn/Pb/Ag)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0	30	235	.005 Amp	2,4,8	12.5 mm	.7 ns
MT48H32M16LFB4-6IT:C	Micron Technology	DDR DRAM	INDUSTRIAL	54	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	33554432 words	1,2,4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	8 mm	5 ns
W9812G6KH-6I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			8MX16	8M		-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5 ns
EDB4432BBBJ-1D-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm				128MX32	128M				BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4432BBBJ-1DAAT-F-R	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm				128MX32	128M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134		1.95 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
IS42S16400J-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	8 mm	5.4 ns
IS42S32400F-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		160 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX32	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90				143 MHz		Not Qualified	134217728 bit			e1	30	260	.002 Amp	1,2,4,8		5.4 ns
IS43TR16512BL-125KBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	101 mA	536870912 words	4,8	YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel			512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260	.083 Amp	4,8	14 mm
MT40A2G8JC-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel			2GX8	2G	1.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT41J128M16JT-093:K	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	248 mA	134217728 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	1066 MHz	8 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.18 ns
MT46H128M16LFDD-48IT:CTR	Micron Technology	LPDDR1 DRAM		60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	2,4,8,16	YES	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32		.8 mm	85 Cel			128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	208 MHz	8 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		2,4,8,16	9 mm	4.8 ns
MT53E2G32D4DE-046WT:C	Micron Technology	LPDDR4 DRAM
IS42S16400J-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32		.8 mm	85 Cel	NO	3-STATE	4MX16	4M		-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH					1,2,4,8	8 mm	5.4 ns
IS42S32800J-6TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	190 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		.5 mm	85 Cel		3-STATE	8MX32	8M		-40 Cel	Tin (Sn)	DUAL	1	R-PDSO-G86	3	3.6 V	1.2 mm	166 MHz	10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	10	260	.004 Amp	1,2,4,8	22.22 mm	5.4 ns
IS43QR16256B-083RBLI	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200.48 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH				.058 Amp	8	13.5 mm
IS43TR16256BL-107MBLI	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			13 mm
IS43TR16256BL-125KBL-TR	Integrated Silicon Solution	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			13 mm
KVR16LS11/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words				1.35		64	MICROELECTRONIC ASSEMBLY				85 Cel			512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.12 mm				34359738368 bit	1.28 V	PROGRAMMABLE CAS LATENCY; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
MT40A512M16JY-083EIT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT46V16M16P-5BXIT:M	Micron Technology	DDR1 DRAM		66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm				16MX16	16M				DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH		30	260			22.22 mm	.7 ns
MT48LC16M16A2B4-7EIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm	143 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT48LC16M16A2P-7EIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC32M16A2P-75IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	255 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0035 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC8M16A2P-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			8MX16	8M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
S27KS0642GABHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	25 mA	8388608 words		YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		3-STATE	8MX8	8M		-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V					.00033 Amp		8 mm
AS4C8M16SA-6TINTR	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	70 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		.8 mm	85 Cel		3-STATE	8MX16	8M	3 V	-40 Cel	TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	166 MHz	10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3			.002 Amp	1,2,4,8	22.22 mm	5 ns
IS42S16400J-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS		BALL		130 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B54	3			143 MHz		Not Qualified	67108864 bit			e1	30	260	.002 Amp	1,2,4,8		5.4 ns
IS43QR16256B-083RBLI-TR	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1200.48 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		30	260	.058 Amp	8	13.5 mm
MT41J128M16JT-125G:K	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				128MX16	128M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.