CONFIGURATION MEMORY EEPROM 685

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XQF32PVO48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		33554432 words		1.8		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel		32MX1	32M	-55 Cel	TIN LEAD	DUAL	R-PDSO-G48	3	2 V	1.2 mm			12 mm	Not Qualified	33554432 bit	1.65 V		e0					18.45 mm	30 ns
XC18V128VQ4I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QFP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		1	FLATPACK						85 Cel		128KX1	128K	-40 Cel	TIN LEAD	QUAD	R-PQFP-G44		3.6 V					Not Qualified	131072 bit	3 V		e0						20 ns
XC18V01PC20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		128KX8	128K	-40 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V							8.9662 mm	15 ns
XC18512PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ		Flash Memories	10	1.27 mm	85 Cel		512KX1	512K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V512SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	10	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified	524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V02VQG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V		e3					10 mm	20 ns
XQ1704LCC44B	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XC18V256SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified	262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XQ1704LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XC18256PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ		Flash Memories	10	1.27 mm	70 Cel		256KX1	256K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V02VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V		e3					10 mm	20 ns
XC18V512VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		64KX8	64K	-40 Cel		QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V							10 mm	15 ns
XC18V256VQG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		32768 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	262144 bit	3 V		e3	30	260			10 mm	15 ns
XC18V04VQG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e3	30	260			10 mm	20 ns
XQR17V16CK44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCN	RECTANGULAR	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words		3.3		1	CHIP CARRIER		1				125 Cel		16MX1	16M	-55 Cel		QUAD	R-CQCC-N44		3.6 V			20 MHz			16777216 bit	3 V
XC18V256SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	10	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified	262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V02PC44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		256KX8	256K	-40 Cel		QUAD	S-PQCC-J44		3.6 V	4.572 mm			16.5862 mm	Not Qualified	2097152 bit	3 V							16.5862 mm	20 ns
XC18V512VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	524288 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XQR17V16CC44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	16.51 mm
XC18V128PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	CHIP CARRIER					1.27 mm	85 Cel		128KX1	128K	-40 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	131072 bit	3 V							8.9662 mm	20 ns
XQR1701LCCG44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e3					16.51 mm
XC18V512SOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE					1.27 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	524288 bit	3 V		e3					12.8 mm	15 ns
XC18V128SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	SMALL OUTLINE					1.27 mm	85 Cel		128KX1	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	131072 bit	3 V		e0					12.8 mm	20 ns
XQR1704LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER					1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e0					16.51 mm
XC18V04PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V128SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	SMALL OUTLINE					1.27 mm	70 Cel		128KX1	128K	0 Cel		DUAL	R-PDSO-G20		3.6 V	2.65 mm			7.5 mm	Not Qualified	131072 bit	3 V							12.8 mm	20 ns
XQR17V16VQ44R	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17S15ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	85 Cel	3-STATE	197696X1	197696	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	197696 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XCF16PVO48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	16777216 words		1.8	1.5/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20		Flash Memories	20	.5 mm	85 Cel		16MX1	16M	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified	16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE		18.45 mm
XC1765DPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		5 MHz	7.62 mm	Not Qualified	65536 bit	4.75 V		e0	30	225		.0015 Amp	9.3599 mm
5962-9951401QYA	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-GQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0				.0001 Amp	16.51 mm	45 ns	3
XC17128EPDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words		5		1	IN-LINE					2.54 mm	85 Cel		128KX1	128K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250			9.3599 mm
XC17S200XLSOG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1335872 words		3.3		1	SMALL OUTLINE					1.27 mm	85 Cel		1335872X1	1335872	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1335872 bit	3 V		e3	30	260			12.8 mm
XC1718LPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	18144 words	COMMON	5	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		2.5 MHz	7.62 mm	Not Qualified	18144 bit	4.5 V		e0	30	225		.0015 Amp	9.3599 mm
XC17S15XLPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		197728 words		3.3		1	IN-LINE					2.54 mm	70 Cel		197728X1	197728	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	197728 bit	3 V		e3	30	250			9.3599 mm
XC17256DPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		12 MHz	8.9662 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.00005 Amp	8.9662 mm
XC1765LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	5	3.3	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified	65536 bit	4.5 V		e0	30	225		.0015 Amp	8.9662 mm
XC17S100ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	70 Cel	3-STATE	781216X1	781216	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	781216 bit	3 V		e0	30	225		.001 Amp	12.8 mm
XC17V16VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17S100ASOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		781216 words		3.3		1	SMALL OUTLINE					1.27 mm	70 Cel		781216X1	781216	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	781216 bit	3 V		e3	30	260			12.8 mm
XC1702LVQG44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	FLATPACK, THIN PROFILE					.8 mm	70 Cel		2MX1	2M	0 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260			10 mm
XC1718DSO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	18144 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.75 mm		5 MHz	3.9 mm	Not Qualified	18144 bit	4.5 V		e0	30	225		.0015 Amp	4.9 mm
XC17256DVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.1938 mm		12 MHz	3.937 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.00005 Amp	4.9276 mm
XC1701LSOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE					1.27 mm	70 Cel		1MX1	1M	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm			7.5184 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260			12.827 mm
XC17V08PCG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		1048576 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		1MX8	1M	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm			16.5862 mm	Not Qualified	8388608 bit	3 V		e3	30	245			16.5862 mm
XC17128EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified	131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	9.3599 mm
XC17S40XLVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25,20		OTP ROMs		1.27 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	330696 bit	3 V		e0	30	225		.00005 Amp	4.9 mm
XCF01SVO20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		1MX1	1M	-40 Cel		DUAL	R-PDSO-G20		3.6 V	1.19 mm			4.4 mm	Not Qualified	1048576 bit	3 V							6.5024 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.