CONFIGURATION MEMORY EEPROM 685

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length
EPC1213PC	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		26624 words	COMMON	5	5	8	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	26KX8	26K	0 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.25 V	4.318 mm	8 MHz	7.62 mm	Not Qualified	212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			9.398 mm
EPC1064TC	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words		5		1	FLATPACK, LOW PROFILE			.8 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQFP-G32		5.25 V	1.27 mm		7 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					7 mm
EPC1064VLM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD	S-PQCC-J20		3.6 V	4.57 mm		8.9662 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						8.9662 mm
EPC1064LI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20		5.25 V	4.57 mm		8.9662 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					8.9662 mm
EPC1213PC8	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		212942 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	212942X1	212942	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.318 mm	6 MHz	7.62 mm	Not Qualified	212942 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1064LCI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1			J BEND		SYNCHRONOUS		65536 words		5		1	CHIP CARRIER				85 Cel		64KX1	64K	-40 Cel		QUAD	S-PQCC-J20		5.5 V				Not Qualified	65536 bit	4.5 V
EPC1213DM8	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		26624 words	COMMON	5	5	8	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	26KX8	26K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8		5.25 V	5.08 mm	6 MHz	7.62 mm	Not Qualified	212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES, ALSO OPERATES WITH 3V-3.6V	e0		220			9.65 mm
EPC1064VPC	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		3.3		1	IN-LINE			2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T8		3.6 V	4.318 mm		7.62 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1064TI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words		5		1	FLATPACK, LOW PROFILE			.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32		5.25 V	1.27 mm		7 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					7 mm
EPC1064VTI32	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS		GULL WING		SYNCHRONOUS		65536 words	COMMON	3.3	3.3	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.27 mm	4 MHz	7 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			7 mm
EPC4QI100N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	90 mA	262144 words		3.3	3.3	16	FLATPACK	QFP100,.7X.9	Flash Memories	.65 mm	85 Cel		256KX16	256K	-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.6 V	3.4 mm	66.7 MHz	14 mm	Not Qualified	4194304 bit	3 V		e3	30	245	NOR TYPE	.00015 Amp	20 mm
5962-9474501MPX	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	125 Cel		256KX1	256K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8		5.25 V	5.08 mm	6 MHz	7.62 mm	Not Qualified	262144 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.65 mm
5962-9474501MPA	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8		5.25 V	5.08 mm	6 MHz	7.62 mm	Not Qualified	262144 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			9.65 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.