CONFIGURATION MEMORY EEPROM 685

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XC1765LSO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	5	3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.75 mm	2.5 MHz	3.9 mm	Not Qualified	65536 bit	4.75 V		e0	30	225	.0005 Amp	4.9 mm
XC1704LVQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4194304 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	15 MHz	10 mm	Not Qualified	4194304 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	240	.00005 Amp	10 mm
XC17256EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.1938 mm	15 MHz	3.937 mm	Not Qualified	262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1736DSO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	36288X1	36288	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.75 mm	5 MHz	3.9 mm	Not Qualified	36288 bit	4.5 V		e0	30	225	.0015 Amp	4.9 mm
XC1718LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	18144 words	COMMON	5	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm	2.5 MHz	8.9662 mm	Not Qualified	18144 bit	4.5 V		e0	30	225	.0015 Amp	8.9662 mm
XC17128ELVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm	15 MHz	3.937 mm	Not Qualified	131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17V01SOG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE			1.27 mm	85 Cel		1MX1	1M	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	1048576 bit	3 V		e3	30	260		12.8 mm
XC1701SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	5.25 V	2.6416 mm	15 MHz	7.5184 mm	Not Qualified	1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	12.827 mm
XC17S300AVQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1875648 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	1875648X1	1875648	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		10 mm	Not Qualified	1875648 bit	3 V		e0			.001 Amp	10 mm
XC1765DSO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.75 mm	5 MHz	3.9 mm	Not Qualified	65536 bit	4.5 V		e0	30	225	.0015 Amp	4.9 mm
XC1736ESOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		36288 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel		36288X1	36288	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.7272 mm		3.937 mm	Not Qualified	36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		4.9276 mm
XCF02SVOG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		2MX1	2M	-40 Cel		DUAL	R-PDSO-G20		3.6 V	1.19 mm		4.4 mm	Not Qualified	2097152 bit	3 V						6.5024 mm
XC1701-PC20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1048576 words		5		1	CHIP CARRIER			1.27 mm	125 Cel		1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.57 mm		8.9662 mm	Not Qualified	1048576 bit	4.5 V		e0				8.9662 mm	45 ns
XC17512LPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		524288 words		3.3		1	IN-LINE			2.54 mm	70 Cel		512KX1	512K	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		9.3599 mm
XC17V04PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	15 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V		e0	30	225	.001 Amp	16.5862 mm
XC1765DPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm	5 MHz	8.9662 mm	Not Qualified	65536 bit	4.5 V		e0	30	225	.0015 Amp	8.9662 mm
XC1701L-PDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	15 MHz	7.62 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250	.00005 Amp	9.3599 mm
XC17512LPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		524288 words		3.3		1	CHIP CARRIER			1.27 mm	70 Cel		512KX1	512K	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		8.9662 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		8.9662 mm
XC17S150AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1040096 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1040096X1	1040096	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1040096 bit	3 V		e3	30	260		4.9 mm
XC17S200AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1335840 bit	3 V		e3	30	260	.001 Amp	4.9 mm
XC17V04PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER			1.27 mm	70 Cel		4MX1	4M	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		8.9662 mm	Not Qualified	4194304 bit	3 V		e3	30	245		8.9662 mm
XC17V01PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER			1.27 mm	70 Cel		1MX1	1M	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		8.9662 mm	Not Qualified	1048576 bit	3 V		e3	30	245		8.9662 mm
XC1702LVQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2097152 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	15 MHz	10 mm	Not Qualified	2097152 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	240	.00005 Amp	10 mm
XC17S100ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	781216X1	781216	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	781216 bit	3 V		e0	30	225	.001 Amp	12.8 mm
5962-9471701MPA	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T8		5.5 V	5.08 mm	5 MHz	7.62 mm	Not Qualified	65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0			.0015 Amp	10.16 mm
5962-9951401QXX	Xilinx	CONFIGURATION MEMORY																																				Not Qualified
XC1718D-S08C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18144 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	18144X1	18144	0 Cel		DUAL	R-PDSO-G8		5.25 V	1.75 mm		3.9 mm	Not Qualified	18144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS					4.9 mm
XC1701LPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1701LPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245	.00005 Amp	8.9662 mm
XC17512LPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	15 MHz	7.62 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17512LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1765EDD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T8		5.5 V	5.08 mm	5 MHz	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			.0015 Amp	10.16 mm
XC1765DSO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.75 mm	5 MHz	3.9 mm	Not Qualified	65536 bit	4.75 V		e0	30	225	.0015 Amp	4.9 mm
XC1704LVQG44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	FLATPACK, THIN PROFILE			.8 mm	70 Cel		4MX1	4M	0 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		10 mm	Not Qualified	4194304 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260		10 mm
5962-9951401QYB	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		1	CHIP CARRIER			1.27 mm	125 Cel		1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-GQCC-J44		3.6 V	4.826 mm	15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0			.0003 Amp	16.51 mm	45 ns	3.3
XC17S15ASOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		197696 words		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		197696X1	197696	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	197696 bit	3 V		e3	30	260		12.8 mm
XC1765ELPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	2.5 MHz	8.9662 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17128DPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm	12.5 MHz	8.9662 mm	Not Qualified	131072 bit	4.75 V		e0	30	225	.00005 Amp	8.9662 mm
XC17S200XLSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1335872 words		3.3		1	SMALL OUTLINE			1.27 mm	85 Cel		1335872X1	1335872	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	1335872 bit	3 V		e0	30	225		12.8 mm
XC17S200XLPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1335872 words		3.3		1	IN-LINE			2.54 mm	70 Cel		1335872X1	1335872	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	1335872 bit	3 V		e0	30	225		9.3599 mm
XC17S40XLVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		330696 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		330696X1	330696	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	330696 bit	3 V		e3	30	260		4.9 mm
XC1736A-PD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.25 V	4.57 mm	2.5 MHz	7.62 mm	Not Qualified	36288 bit	4.75 V		e0	30	225	.0005 Amp	9.1948 mm		15
XC1765EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
EPC1064LC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20		5.25 V	4.57 mm		8.9662 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0				8.9662 mm
EPC1064TI32	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS		GULL WING		SYNCHRONOUS		65536 words	COMMON	5	5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	5.5 V	1.27 mm	6 MHz	7 mm	Not Qualified	65536 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220		7 mm
EPC1213LC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		26624 words	COMMON	5	5	8	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	26KX8	26K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20		5.25 V	4.57 mm	8 MHz	8.9662 mm	Not Qualified	212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220		8.9662 mm
EPC1213D59628	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		DUAL	R-GDIP-T8		5.5 V	5.08 mm		7.62 mm	Not Qualified	212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					9.65 mm
EPC1064VTI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words		3.3		1	FLATPACK, LOW PROFILE			.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32		3.6 V	1.27 mm		7 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0				7 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.