CONFIGURATION MEMORY EEPROM 685

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XC1718DPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	18144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm	5 MHz	8.9662 mm	Not Qualified	18144 bit	4.5 V		e0	30	225	.0015 Amp	8.9662 mm
XC1701PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	1048576 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17512LPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	512KX1	512K	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XCF32PVOG48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words		1.8		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	125 Cel		32MX1	32M	-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G48	3	2 V	1.2 mm		12 mm	Not Qualified	33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e4	30	260		18.45 mm
XC17S30AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		336768 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		336768X1	336768	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V		e3	30	260		4.9 mm
XC17256EDD8B	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T8		5.5 V	5.08 mm	12.5 MHz	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			.00005 Amp	10.16 mm
XC17V04PCG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER			1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm		16.5862 mm	Not Qualified	4194304 bit	3 V		e3	30	245		16.5862 mm
XC17S30AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	336768X1	336768	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC1765LPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	5	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	2.5 MHz	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	30	225	.0015 Amp	9.3599 mm
XC1765ELSOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.7272 mm	2.5 MHz	3.937 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250	.00005 Amp	4.9276 mm
5962-9951401QYX	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		1	CHIP CARRIER				125 Cel		1MX1	1M	-55 Cel		QUAD	S-GQCC-J44		3.6 V		15 MHz		Not Qualified	1048576 bit	3 V					.00005 Amp		45 ns	3.3
XC17S15XLPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		197728 words		3.3		1	IN-LINE			2.54 mm	85 Cel		197728X1	197728	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	197728 bit	3 V		e0	30	225		9.3599 mm
XC1701PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1765EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	70 Cel		64KX1	64K	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		8.9662 mm	Not Qualified	65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		8.9662 mm
XC17256ELVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		256KX1	256K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm		3.937 mm	Not Qualified	262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260		4.9276 mm
XC17V02VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	15 MHz	10 mm	Not Qualified	2097152 bit	3 V		e0	30	240	.001 Amp	10 mm
XC17V01SOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		1MX1	1M	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	1048576 bit	3 V		e3	30	260		12.8 mm
XC17256EPDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	85 Cel		256KX1	256K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		9.3599 mm
XC17S15APDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		197696 words		3.3		1	IN-LINE			2.54 mm	70 Cel		197696X1	197696	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	197696 bit	3 V		e3	30	250		9.3599 mm
XC17V01VOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1MX1	1M	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1048576 bit	3 V		e3	30	260		4.9 mm
XC1718D-S08I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18144 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm		3.9 mm	Not Qualified	18144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS					4.9 mm
XC1765LSO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	5	3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.75 mm	2.5 MHz	3.9 mm	Not Qualified	65536 bit	4.5 V		e0	30	225	.0015 Amp	4.9 mm
XC1701SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	5.5 V	2.6416 mm	15 MHz	7.5184 mm	Not Qualified	1048576 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	12.827 mm
XC17S150APDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1040096 words		3.3		1	IN-LINE			2.54 mm	70 Cel		1040096X1	1040096	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	1040096 bit	3 V		e3	30	250		9.3599 mm
XC17S15APDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		197696 words		3.3		1	IN-LINE			2.54 mm	85 Cel		197696X1	197696	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	197696 bit	3 V		e3	30	250		9.3599 mm
XC1765EPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	85 Cel		64KX1	64K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		8.9662 mm	Not Qualified	65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		8.9662 mm
XC1736DPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.25 V	4.5974 mm	5 MHz	7.62 mm	Not Qualified	36288 bit	4.75 V		e0	30	225	.0015 Amp	9.3599 mm
XC17512LPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX1	512K	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	15 MHz	7.62 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17V08VQG44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		1048576 words		3.3		8	FLATPACK, THIN PROFILE			.8 mm	70 Cel		1MX8	1M	0 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		10 mm	Not Qualified	8388608 bit	3 V		e3	30	260		10 mm
XC1718LSO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	18144 words	COMMON	5	3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.75 mm	2.5 MHz	3.9 mm	Not Qualified	18144 bit	4.5 V		e0	30	225	.0015 Amp	4.9 mm
XC17128EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	15 MHz	7.62 mm	Not Qualified	131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17S100APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	781216X1	781216	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	781216 bit	3 V		e0	30	225	.001 Amp	9.3599 mm
XC17S15AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	197696X1	197696	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	197696 bit	3 V		e3	30	260	.001 Amp	4.9 mm
XC1736ESOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.25 V	1.7272 mm	10 MHz	3.937 mm	Not Qualified	36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250	.00005 Amp	4.9276 mm
XC17S50ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	559200 bit	3 V		e0	30	225	.001 Amp	12.8 mm
XC17S150APDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1040096 words		3.3		1	IN-LINE			2.54 mm	85 Cel		1040096X1	1040096	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	1040096 bit	3 V		e3	30	250		9.3599 mm
XC17512LSO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	512KX1	512K	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm	15 MHz	7.5184 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	12.827 mm
XC1701LSOG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE			1.27 mm	85 Cel		1MX1	1M	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm		7.5184 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260		12.827 mm
XC1718LVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	18144 words	COMMON	5	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	18144X1	18144	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.1938 mm	2.5 MHz	3.937 mm	Not Qualified	18144 bit	4.75 V		e0	30	225	.0005 Amp	4.9276 mm
XC17S200AVQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		10 mm	Not Qualified	1335840 bit	3 V		e0			.001 Amp	10 mm
XC17128ELPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		131072 words		3.3		1	CHIP CARRIER			1.27 mm	70 Cel		128KX1	128K	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		8.9662 mm	Not Qualified	131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		8.9662 mm
XC17S30AVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		336768 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		336768X1	336768	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V		e3	30	260		4.9 mm
XC17V04PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	4194304 bit	3 V		e0	30	225	.001 Amp	8.9662 mm
XC17S100AVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		781216 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		781216X1	781216	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	781216 bit	3 V		e3	30	260		4.9 mm
XC17128DPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm	12.5 MHz	8.9662 mm	Not Qualified	131072 bit	4.5 V		e0	30	225	.00005 Amp	8.9662 mm
XC17V16PCG44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		2MX8	2M	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm		16.5862 mm	Not Qualified	16777216 bit	3 V		e3	30	245		16.5862 mm
XC17128ELPDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words		3.3		1	IN-LINE			2.54 mm	85 Cel		128KX1	128K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		9.3599 mm
XC17S150AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	1040096X1	1040096	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1040096 bit	3 V		e0	30	225	.00005 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.