14 EEPROM 584

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
M95640-VDL1T	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	2.7 V		e0			.000002 Amp	5 mm
M95128-VDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		SPI	131072 bit	2.7 V		e0			.000002 Amp	5 mm
M95640-RDL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		8KX8	8K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		2 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V						5 mm
M24256-BWDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	2.7	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V		e0			.000002 Amp	5 mm
M95320-RDL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		4KX8	4K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		2 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V						5 mm
M24128-DL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	4.5 V						5 mm
M95320-WDL3G	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4			.000002 Amp	5 mm
M95160-DL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	4.4 mm	Not Qualified	10 ms	SPI	16384 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.00001 Amp	5 mm
M95640-RDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.000001 Amp	5 mm
M24128-BDL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		I2C	131072 bit	4.5 V		e0			.00001 Amp	5 mm
M24256-BRDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		I2C	262144 bit	1.8 V		e0				5 mm
M95160-DL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		2KX8	2K	-20 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm			4.4 mm	Not Qualified		SPI	16384 bit	4.5 V						5 mm
M95128-WDL3T	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		16KX8	16K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V		e0			.000002 Amp	5 mm
M24128-BRDL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		.8 mA	16384 words		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.635 mm	70 Cel		16KX8	16K	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14				100000 Write/Erase Cycles			Not Qualified		I2C	131072 bit			e0			.000001 Amp
M24C32-RDL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	4096 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel	OPEN-DRAIN	4KX8	4K	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	4.4 mm	Not Qualified	10 ms	I2C	32768 bit	1.8 V		e0			.000001 Amp	5 mm
M95640-WDL6P	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4			.000001 Amp	5 mm
M24128-DL3T	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	4.5 V						5 mm
M95320-RDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V		e0			.000001 Amp	5 mm
M95160-DL3T	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	16384 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.00001 Amp	5 mm
M24128-WDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	2.5 V						5 mm
M24128-DL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	4.5 V						5 mm
M24C32-WDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		1 mA	4096 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.635 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit			e0			.000002 Amp
M95128-WDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		SPI	131072 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.000002 Amp	5 mm
M95320-RDL6P	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V		e4			.000001 Amp	5 mm
M24C64-WDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V		e0			.000002 Amp	5 mm
M95160-SDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		3.6 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		e0			.0000003 Amp	5 mm
M95640-RDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.000001 Amp	5 mm
M24128-DL1T	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	OPEN-DRAIN	16KX8	16K	0 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	4.5 V						5 mm
M95640-WDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		8KX8	8K	-20 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm			4.4 mm	Not Qualified		SPI	65536 bit	2.5 V						5 mm
M24C64-DL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V		e0			.00001 Amp	5 mm
HN58X24256TSR	Renesas Electronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	85 Cel		32KX8	32K	-20 Cel			DUAL		R-PDSO-G14		5.5 V	1.1 mm		.4 MHz	4.4 mm	Not Qualified	15 ms		262144 bit	1.8 V	10 YEAR DATA RETENTION					5 mm	3
HN58X25256TIE	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	10	.65 mm	85 Cel		32KX8	32K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.1 mm	100000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	8 ms	SPI	262144 bit	1.8 V			20	260	.000003 Amp	5 mm
HN58X25128TIE	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	10	.65 mm	85 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.1 mm	100000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	8 ms	SPI	131072 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.003 Amp	5 mm
HN58X24256TIE	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	10	.65 mm	85 Cel		32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.1 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	15 ms	I2C	262144 bit	1.8 V					.000003 Amp	5 mm
HN58X25128TI	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		16X8	16	-40 Cel	TIN LEAD		DUAL		R-PDSO-G14		5.5 V	1.1 mm		5 MHz	4.4 mm	Not Qualified	5 ms	SPI	128 bit	1.8 V		e0				5 mm
HN58X24128TIE	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	10	.65 mm	85 Cel		16KX8	16K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.1 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	15 ms	I2C	131072 bit	1.8 V					.000003 Amp	5 mm
HN58X24256T	Renesas Electronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	70 Cel		32KX8	32K	0 Cel			DUAL		R-PDSO-G14		5.5 V	1.1 mm		.4 MHz	4.4 mm	Not Qualified	15 ms		262144 bit	1.8 V	10 YEAR DATA RETENTION					5 mm	3
HN58X25512TI	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		64KX8	64K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.1 mm		5 MHz	4.4 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V						5 mm
HN58X24256TI	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	15 ms	I2C	262144 bit	1.8 V	100000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	e0				5 mm
HN58X25256TI	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD		DUAL		R-PDSO-G14		5.5 V	1.1 mm		5 MHz	4.4 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V		e0				5 mm
HN58X24128TSR	Renesas Electronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDSO-G14		5.5 V	1.1 mm		.4 MHz	4.4 mm	Not Qualified	15 ms		131072 bit	1.8 V	10 YEAR DATA RETENTION					5 mm	3
HN58X24128T	Renesas Electronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	70 Cel		16KX8	16K	0 Cel			DUAL		R-PDSO-G14		5.5 V	1.1 mm		.4 MHz	4.4 mm	Not Qualified	15 ms		131072 bit	1.8 V	10 YEAR DATA RETENTION					5 mm	3
HN58X24128TI	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	15 ms	I2C	131072 bit	1.8 V	100000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	e0				5 mm
X25045V	Renesas Electronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		512X8	512	0 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		1 MHz	4.4 mm		10 ms	SPI	4096 bit	4.5 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE HIGH RESET					5 mm
X25045VI	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		512X8	512	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		1 MHz	4.4 mm		10 ms	SPI	4096 bit	4.5 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE HIGH RESET					5 mm
X25043V	Renesas Electronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		512X8	512	0 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		1 MHz	4.4 mm		10 ms	SPI	4096 bit	4.5 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE LOW RESET					5 mm
R1EX24256ATB00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		5 mA	32768 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.635 mm	85 Cel		32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit						.000002 Amp
X25045VI-2.7	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		512X8	512	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		1 MHz	4.4 mm		10 ms	SPI	4096 bit	2.7 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE HIGH RESET					5 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.