14 EEPROM 584

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length
M95160-SDL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	2048 words		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.635 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		SPI	16384 bit			e0	.0000003 Amp
M24C32-WDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V		e0	.000002 Amp	5 mm
M95640-WDL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V		e0	.000002 Amp	5 mm
M24256-AWDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V		e0	.000002 Amp	5 mm
M95128-DL3T	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		16KX8	16K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	131072 bit	4.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0	.00002 Amp	5 mm
M24C64-RDL1T	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	OPEN-DRAIN	8KX8	8K	0 Cel			DUAL		R-PDSO-G14		3.6 V	1.2 mm		.1 MHz	4.4 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V				5 mm
M24256-AWDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V		e0	.000002 Amp	5 mm
M24C32-DL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel	OPEN-DRAIN	4KX8	4K	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V		e0	.00001 Amp	5 mm
M95160-DL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	4.4 mm	Not Qualified	10 ms	SPI	16384 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0	.00001 Amp	5 mm
M95640-DL3P	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4	.000005 Amp	5 mm
M95640-RDL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V		e0	.000001 Amp	5 mm
M95128-VDL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	3.3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel		16KX8	16K	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	131072 bit	2.7 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0		5 mm
M24128-BWDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		I2C	131072 bit	2.5 V		e0	.000002 Amp	5 mm
M95320-SDL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	4096 words		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.635 mm	85 Cel		4KX8	4K	-20 Cel	Tin/Lead (Sn/Pb)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit			e0	.000001 Amp
M95320-DL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	4096 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0	.000005 Amp	5 mm
M95128-WDL1T	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel		16KX8	16K	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	131072 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0		5 mm
M95640-WDL3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4	.000002 Amp	5 mm
M24256-BSDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		32KX8	32K	-20 Cel			DUAL		R-PDSO-G14		3.6 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	1.8 V				5 mm
M24128-BSDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		16KX8	16K	-40 Cel			DUAL		R-PDSO-G14		3.6 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	1.8 V				5 mm
M95640-VDL1T	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	2.7 V		e0	.000002 Amp	5 mm
M24128-DL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel	OPEN-DRAIN	16KX8	16K	0 Cel	TIN LEAD	1010000R	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	4.5 V		e0	.00001 Amp	5 mm
M95640-RDL3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G14	1	5.5 V	1.2 mm		2 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V		e4		5 mm
M95160-DL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	16384 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0	.00001 Amp	5 mm
M95640-DL6P	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4	.000002 Amp	5 mm
M24256-BSDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G14		3.6 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	1.8 V				5 mm
M95128-VDL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		SPI	131072 bit	2.7 V		e0	.000002 Amp	5 mm
M95320-RDL6TG	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V		e4	.000001 Amp	5 mm
M24C32-DL3T	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V				5 mm
M24C64-DL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		8192 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V		e0		5 mm
M24256-AWDL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V		e0	.000002 Amp	5 mm
M95320-DL3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	4096 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4	.000005 Amp	5 mm
M95320-WDL3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4	.000002 Amp	5 mm
M95640-VDL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	2.7 V		e0	.000002 Amp	5 mm
M95320-SDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	4096 words		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.635 mm	85 Cel		4KX8	4K	-20 Cel	Tin/Lead (Sn/Pb)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit			e0	.000001 Amp
M24C64-WDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V				5 mm
M24256-BVDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.7		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G14		3.6 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V				5 mm
M24256-BRDL1	STMicroelectronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		.8 mA	32768 words		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.635 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit			e0	.000001 Amp
M95128-VDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		SPI	131072 bit	2.7 V		e0	.000002 Amp	5 mm
M95640-RDL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		8KX8	8K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		2 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V				5 mm
M24256-BWDL6	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	2.7	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V		e0	.000002 Amp	5 mm
M95320-RDL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		4KX8	4K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		2 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V				5 mm
M24128-DL3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm		.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	4.5 V				5 mm
M95320-WDL3G	STMicroelectronics	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	125 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	4.4 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4	.000002 Amp	5 mm
M95160-DL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	4.4 mm	Not Qualified	10 ms	SPI	16384 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0	.00001 Amp	5 mm
M95640-RDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0	.000001 Amp	5 mm
M24128-BDL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		I2C	131072 bit	4.5 V		e0	.00001 Amp	5 mm
M24256-BRDL6T	STMicroelectronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		I2C	262144 bit	1.8 V		e0		5 mm
M95160-DL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		2KX8	2K	-20 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm			4.4 mm	Not Qualified		SPI	16384 bit	4.5 V				5 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.