14 EEPROM 584

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Programming Voltage (V)
ST93CS66ML3013TR	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3		16	SMALL OUTLINE			10	1.27 mm	125 Cel	3-STATE	256X16	256	-40 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS			8.65 mm
ST25C16ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words		3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	TIN LEAD	1010MMMR	DUAL	SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.000005 Amp
ST24C04ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5	3.3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	I2C INTERFACE; 1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0		8.65 mm
ST24C16ML	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words			8	SMALL OUTLINE			10	1.27 mm	70 Cel		2KX8	2K	0 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm			3.9 mm	Not Qualified			16384 bit	3 V	OVER 10 YEARS DATA RETENTION			8.65 mm	3
ST25C04ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5	3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel	OPEN-DRAIN	512X8	512	-40 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	I2C INTERFACE; 1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.000005 Amp	8.65 mm
ST93CS66ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3.3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4	.00005 Amp	8.65 mm
M9346M6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		MOS	GULL WING	SERIAL		12 mA	64 words	5	5	16	SMALL OUTLINE	SOP14,.25	EEPROMs		1.27 mm	85 Cel		64X16	64	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			10000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e0	.003 Amp
ST93CS57ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.0001 Amp	8.65 mm
ST24C04ML1013TR	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		3.3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel		512X8	512	0 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e0		8.65 mm
ST25W16ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words		3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.000005 Amp
M9346M1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		MOS	GULL WING	SERIAL		12 mA	64 words	5	5	16	SMALL OUTLINE	SOP14,.25	EEPROMs		1.27 mm	70 Cel		64X16	64	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			10000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e0	.003 Amp
ST93CS67ML3013TR	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3		16	SMALL OUTLINE				1.27 mm	125 Cel		256X16	256	-40 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V				8.65 mm
ST25C04ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5	3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	I2C INTERFACE; 1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.000005 Amp	8.65 mm
ST24C16CML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel		2KX8	2K	-40 Cel	Tin/Lead (Sn/Pb)	1010MMMR	DUAL	SOFTWARE	R-PDSO-G14			100000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.0001 Amp
ST24C04ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5	3.3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel	OPEN-DRAIN	512X8	512	-40 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	I2C INTERFACE; 1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0		8.65 mm
ST93CS67ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	70 Cel	3-STATE	256X16	256	0 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4	.00005 Amp	8.65 mm
ST24C16ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	TIN LEAD	1010MMMR	DUAL	SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.0001 Amp
ST25C16ML	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words			8	SMALL OUTLINE			10	1.27 mm	70 Cel		2KX8	2K	0 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm			3.9 mm	Not Qualified			16384 bit	2.5 V	OVER 10 YEARS DATA RETENTION			8.65 mm	3
ST24W16ML	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words			8	SMALL OUTLINE			10	1.27 mm	70 Cel		2KX8	2K	0 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm			3.9 mm	Not Qualified			16384 bit	3 V	OVER 10 YEARS DATA RETENTION			8.65 mm	3
ST24W16ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.0001 Amp
ST93CS67ML6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4	.00005 Amp	8.65 mm
ST24C16ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.0001 Amp
ST93CS67ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4	.00005 Amp	8.65 mm
ST93CS47ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	64 words		3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	70 Cel		64X16	64	0 Cel	Tin/Lead (Sn/Pb)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e0	.00005 Amp
ST24W16ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.0001 Amp
ST93CS46ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	64 words	5	5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	85 Cel		64X16	64	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e0	.00005 Amp
ST93CS66ML1013TR	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3.3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	70 Cel	3-STATE	256X16	256	0 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; PAGE WRITE	e4	.00005 Amp	8.65 mm
ST93CS66ML6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3.3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4	.00005 Amp	8.65 mm
ST25W16ML	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words			8	SMALL OUTLINE			10	1.27 mm	70 Cel		2KX8	2K	0 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm			3.9 mm	Not Qualified			16384 bit	2.5 V	OVER 10 YEARS DATA RETENTION			8.65 mm	3
ST25W16ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words		3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.000005 Amp
ST93CS66ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3.3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	125 Cel	3-STATE	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4	.00005 Amp	8.65 mm
ST25C16CML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE			10	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS			8.65 mm
ST25C04ML1013TR	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel		512X8	512	0 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e0	.000005 Amp	8.65 mm
ST25C16CML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE			10	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS			8.65 mm
ST93CS67ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	125 Cel		256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V		e4	.00005 Amp	8.65 mm
ST25W16ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words		3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.000005 Amp
ST24C04ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		3.3/5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel		512X8	512	0 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e0		8.65 mm
ST93CS67ML1013TR	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	70 Cel	3-STATE	256X16	256	0 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4	.00005 Amp	8.65 mm
ST93CS57ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel	3-STATE	128X16	128	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.00005 Amp	8.65 mm
ST24W16ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel		2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit			e0	.0001 Amp
ST93CS56ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.0001 Amp	8.65 mm
ST93CS57ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel	3-STATE	128X16	128	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.0001 Amp	8.65 mm
ST24C16CML1TR	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE			10	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel			DUAL		R-PDSO-G14	5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS			8.65 mm
ST93CS47ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	64 words		3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	85 Cel		64X16	64	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e0	.00005 Amp
ST24C16CML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel	TIN LEAD	1010MMMR	DUAL	SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	100000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e0	.0001 Amp	8.65 mm
ST93CS66ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3	3.3/5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	40	1.27 mm	70 Cel	3-STATE	256X16	256	0 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; PAGE WRITE	e4	.00005 Amp	8.65 mm
ST93CS56ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	128 words	5	5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel	3-STATE	128X16	128	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.0001 Amp	8.65 mm
ST93CS56ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	5	16	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	70 Cel	3-STATE	128X16	128	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS	e0	.00005 Amp	8.65 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.