22 EEPROM 15

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

TC58256DC

Toshiba

EEPROM

COMMERCIAL

22

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

33554432 words

3.3

8

UNCASED CHIP

2.54 mm

55 Cel

32MX8

32M

0 Cel

UPPER

R-XUUC-N22

3.6 V

.84 mm

37 mm

Not Qualified

268435456 bit

3 V

45 mm

3

TH58NS100DC

Toshiba

EEPROM

COMMERCIAL

22

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

134217728 words

3.3

8

UNCASED CHIP

2.54 mm

55 Cel

128MX8

128M

0 Cel

UPPER

R-XUUC-N22

3.6 V

.84 mm

37 mm

Not Qualified

1073741824 bit

3 V

45 mm

3

TC58NS128ADC

Toshiba

EEPROM

COMMERCIAL

22

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

16777216 words

3.3

8

UNCASED CHIP

2.54 mm

55 Cel

16MX8

16M

0 Cel

TIN LEAD

UPPER

R-XUUC-N22

3.6 V

.84 mm

37 mm

Not Qualified

134217728 bit

3 V

e0

45 mm

3

TH58512DC

Toshiba

EEPROM

22

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

33554432 words

3.3

8

MICROELECTRONIC ASSEMBLY

32MX8

32M

UNSPECIFIED

R-XXMA-X22

3.6 V

Not Qualified

268435456 bit

3 V

55 ns

3

TH58NS512DC

Toshiba

EEPROM

COMMERCIAL

22

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3.3

8

UNCASED CHIP

2.54 mm

55 Cel

64MX8

64M

0 Cel

UPPER

R-XUUC-N22

3.6 V

.84 mm

37 mm

Not Qualified

536870912 bit

3 V

45 mm

45 ns

3

TC58V64DC

Toshiba

EEPROM

COMMERCIAL

22

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

8388608 words

3.3

8

MICROELECTRONIC ASSEMBLY

55 Cel

8MX8

8M

0 Cel

TIN LEAD

UNSPECIFIED

X-XXMA-X22

3.6 V

Not Qualified

67108864 bit

3 V

e0

35 ns

3

T58V64ADC

Toshiba

EEPROM

COMMERCIAL

22

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

SERIAL

ASYNCHRONOUS

8388608 words

3.3

8

MICROELECTRONIC ASSEMBLY

55 Cel

8MX8

8M

0 Cel

TIN LEAD

UNSPECIFIED

X-XXMA-X22

3.6 V

Not Qualified

67108864 bit

3 V

e0

3

TC58NS256ADC

Toshiba

EEPROM

COMMERCIAL

22

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

SERIAL

SYNCHRONOUS

33554432 words

3.3

8

MICROELECTRONIC ASSEMBLY

2.54 mm

55 Cel

32MX8

32M

0 Cel

TIN LEAD

UNSPECIFIED

R-XXMA-X22

3.6 V

.84 mm

37 mm

Not Qualified

268435456 bit

3 V

e0

45 mm

3

TC58V32DC

Toshiba

EEPROM

COMMERCIAL

22

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

4194304 words

3.3

8

MICROELECTRONIC ASSEMBLY

55 Cel

4MX8

4M

0 Cel

UNSPECIFIED

R-XXMA-X22

3.6 V

Not Qualified

33554432 bit

3 V

35 ns

3

TC58V64ADC

Toshiba

EEPROM

COMMERCIAL

22

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

8388608 words

3.3

8

UNCASED CHIP

2.54 mm

55 Cel

8MX8

8M

0 Cel

UPPER

R-XUUC-N22

3.6 V

.84 mm

37 mm

Not Qualified

67108864 bit

3 V

45 mm

35 ns

3

TC58128DC

Toshiba

EEPROM

COMMERCIAL

22

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

16777216 words

3.3

8

UNCASED CHIP

2.54 mm

55 Cel

16MX8

16M

0 Cel

Tin/Lead (Sn/Pb)

UPPER

R-XUUC-N22

3.6 V

.84 mm

37 mm

Not Qualified

134217728 bit

3 V

e0

45 mm

35 ns

3

TC58V32ADC

Toshiba

EEPROM

COMMERCIAL

22

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4194304 words

3.3

8

MICROELECTRONIC ASSEMBLY

55 Cel

4MX8

4M

0 Cel

DUAL

R-XDMA-N22

3.6 V

Not Qualified

33554432 bit

3 V

35 ns

3

TC5832DC

Toshiba

EEPROM

COMMERCIAL

22

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

SERIAL

ASYNCHRONOUS

4194304 words

5

8

MICROELECTRONIC ASSEMBLY

55 Cel

3-STATE

4MX8

4M

0 Cel

UNSPECIFIED

R-XXMA-X22

5.5 V

Not Qualified

33554432 bit

4.5 V

5

TH58V128DC

Toshiba

EEPROM

COMMERCIAL

22

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

16777216 words

3.3

8

MICROELECTRONIC ASSEMBLY

55 Cel

16MX8

16M

0 Cel

UNSPECIFIED

R-XXMA-X22

3.6 V

Not Qualified

134217728 bit

3 V

45 ns

3

TC58V16BDC

Toshiba

EEPROM

COMMERCIAL

22

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

8

MICROELECTRONIC ASSEMBLY

55 Cel

2MX8

2M

0 Cel

UNSPECIFIED

R-XXMA-X22

3.6 V

Not Qualified

16777216 bit

3 V

45 ns

3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.